ROHM 2SC4097, 2SC2411K, 2SC1741S Datasheet
2SC2411K / 2SC4097 / 2SC1741S
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K / 2SC4097 / 2SC1741S
Features
!
CMax
I
CMax
.
. = 0.5mA
CE(sat)
.
1) High I
2) Low V
Optimal for low voltage operation.
3) Complements the
2SA1036K / 2SA1577 / 2SA854S.
Structure
!
Epitaxial planar type
NPN silicon transistor
External dimensions
!
(Units : mm)
2SC2411K 2SC4097
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
−0.1
+0.2
2.8±0.2
1.6
(3)
All terminals have same dimensions
+0.1
0.4
−0.05
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : C* Abbreviated symbol : C*
2SC1741S
4±0.2 2±0.2
0.2(15Min.)
±
3
5
(1)
ROHM : SPT
EIAJ : SC-72
(2) (3)
3Min.
+
0.15
0.45
−
0.05
+
0.4
2.5
−
0.1
1.1
0.8±0.1
+0.1
0.15
−0.06
(1) Emitter
(2) Base
(3) Collector
0.5
(1) Emitter
(2) Collector
(3) Base
+0.2
−0.1
0.45
0 ∼ 0.1
0.3 ∼ 0.6
+
−
0.15
0.05
2.0±0.2
1.3±0.1
0.65 0.65
(2)(1)
(3)
All terminals have same dimensions
0.3
ROHM : UMT3
EIAJ : SC-70
+0.1
−0
0.9±0.1
0.7±0.1
0.2
0.15±0.05
0 ∼ 0.1
0.1 ∼ 0.4
(1) Emitter
(2) Base
(3) Collector
2.1±0.1
1.25±0.1
Absolute maximum ratings
!
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
PC must not be exceeded.
*
Denotes h
*
FE
(Ta = 25°C)
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
40 V
32
5
0.5
0.2
150
−55 ∼ +150
V
V
A
W
°C
°C
*
Transistors
Electrical characteristics
!
2SC2411K / 2SC4097 / 2SC1741S
(Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
2SC2411K, 2SC4097
2SC1741S
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Packaging Specifications and h
!
Package
Code
FE
h
Type
2SC2411K
2SC4097
Basic ordering unit (pieces)
PQR
PQR
2SC1741S
FE
BV
BV
BV
I
I
V
Cob
Min.
CBO
40
CEO
32
EBO
5
CBO
EBO
h
CE(sat)
f
−
−
82
FE
120 − 560 −
−
T
−
−
T146 T106
3000 3000
Typ. Max. Unit Conditions
C
−
−
−
−
−
−
−
250
6.0
−
−
−
1
1
390
0.4
−
−
µA
µA
MHz
pF
= 100µA
VI
C
= 1mA
I
V
E
= 100µA
I
V
V
CB
EB
V
−
CE
V
I
C/IB
V
CE
V
CB
V
= 20V
= 4V
= 3V, IC = 100mA
= 500mA/50mA
= 5V, IE = −20mA, f = 100MHz
= 10V, IE = 0A, f = 1MHz
Taping
TP
5000
−
−
−
−
−−QRS
hFE values are classified as follows:
Item P Q R
FE
h
Electrical characteristic curves
!
1000
500
200
mA)
(
C
100
50
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
Fig.1 Grounded emitter propagation
82 ∼ 180 120 ∼ 270 180 ∼ 390S270 ∼ 560
V
CE
=6V
Ta=100
°C
80
°C
25
°C
BASE TO EMITTER VOLTAGE : V
−25
°C
−55
°C
0.80.2 0.4 0.90.70.5 1.10.3 1.00.6
BE
(
characteristics
100
Ta=25
°C
mA)
(
C
50
COLLECTOR CURRENT : I
0
V)
COLLECTOR TO EMITTER VOLTAGE : V
0.50mA
10 2345
0.45mA
I
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
B
=
0A
CE
(
V)
Fig.2 Grounded emitter output
characteristics(Ι)
500
mA)
(
C
400
300
200
100
COLLECTOR CURRENT : I
0
10 2345
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
characteristics(ΙΙ)
Ta=25
2mA
1.0mA
0.8mA
0.6mA
I
1.8mA
1.6mA
1.4mA
1.2mA
0.4mA
0.2mA
B
=
0A
°C
CE
(
V)
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