ROHM 2SC4081UB Schematic [ru]

(50V, 0.15A)
2SC4081UB
zApplications zDimensions (Unit : mm) General purpose small signal amplifier
zFeatures
1) Low Cob. Cob=2.0pF (Typ.)
2) Complements the 2SA4081.
zStructure
NPN silicon epitaxial planar transistor
zAbsolute maximum (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation Junction temperature Range of storage temperature
1 Pw=1ms Single pulse2 Each terminal mounted on a recommended land
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance
Symbol
BV BV BV
I
CBO
I
EBO
V
CE(sat)
h
Cob
h
rank categories
FE
Rank
h
FE
PQ
82 to 180 120 to 270
Symbol Limits Unit
60 V 50
7 150I 200 200 150
55 to +150
100
100
400
560
3.5
f
CEO
CBO
EBO
FE
T
CBO
V V
CEO
V
EBO
I
CP
P
Tj
Tstg
Min.
C
12
D
Typ. Max. Unit Conditions 50 60
7
82
180
2.0
R
180 to 390S270 to 560
UMT3F
(1) Base (2) Emitter (3) Collector
∗ = Denotes h
V VI
V nA nA
mV
MHz
pF
0.32
0.4250.425
2.1
1.25
FE
Abbreviated symbol : B
V
V mA mA
mW
°C °C
I
C
=1mA
C
=50µA
I
E
=50µA
V
CB
=60V
EB
=7V
V I
C/IB
=50mA/5mA
V
CE
=6V, IC=1mA
CE
=12V, IE=−2mA, f=100MHz
V V
CB
=12V, IE=0A, f=1MHz
2.0
(3)
(1) (2)
0.65 0.65
1.3
0.9
0.530.53
0.13
Each lead has same dimensions
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
n
(mA)
.0
)
0.50mA
0
)
0
500
DC CURRENT GAIN : h
0
500
DC CURRENT GAIN : h
F
)
0.5
0
F
)
0.5
0
F
V)
0
0
.
20
0
s)
zElectrical characterristic curves
50
20
C
10
5
2 1
0.5
COLLECTOR CURRENT : I
0.2
0.1 0
BASE TO EMITTER VOLTAGE : V
25°C
100°C
55°C
=
Ta
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig.1 Grounded emitter propagatio
characteristics
Ta=25°C
FE
200
100
50
VCE=5V
V
CE
=6V
BE
(V)
3V 1V
Data Sheet 2SC4081UB
100
Ta=25°C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2
0
COLLECTOR TO EMITTER VOLTAGE : V
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
(V
Fig.2 Grounded emitter output
characteristics ( Ι )
FE
200
100
50
Ta=100°C
25°C
55°C
VCE=
5V
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : V
30µA 27µA 24µA 21µA
18µA 15µA
12µA
9µA 6µA
3µA
IB=0A
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
(V
CE(sat)
0.2 IC/IB=50
0.1
0.05
20 10
CE
Ta=25°C
2
(V
20
10
0.2
0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I
Fig.4 DC current gain vs.
collector current ( Ι )
(V
CE(sat)
0.2
Ta=100°C
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
ig.7 Collector-emitter saturation
pF)
pF)
10
25°C
55°C
0.5 1 2 5 10 20 50 100 20 COLLECTOR CURRENT : I
voltage vs. collector current ( Ι )
Cib
C
(mA)
C
IC/IB=10
(mA)
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
20
10
0.2 0.5 1 2 5 10 20 50 100 20
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
0.5
(
CE(sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
55°C
0.5 1 2 5 10 20 50 10
0.2 COLLECTOR CURRENT : I
C
(mA)
ig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
bb' (p
200
100
IC/IB=50
Ta=25°C f=32MH VCB=6V
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
0.2
0.5 1 2 5 10 20 50 100 20 COLLECTOR CURRENT : I
C
(mA)
ig. 6 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
V
CE
E
=6V
(mA)
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
0.5 1 2 5 10 20 50 10 EMITTER CURRENT : I
Fig.9 Gain bandwidth product vs.
Z
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (
Fig.10 Collector output capacitance vs
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2/2
c
5
2
EMITTER INPUT CAPACITANCE : Cib (
1
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V EMITTER TO BASE VOLTAGE : V
Cob
CB
(V)
EB
(V)
collector-base voltage Emitter input capacitance vs. emitter-base voltage
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
0.2 0.5 1 2 5 1
BASE COLLECTOR TIME CONSTANT : Cc·r
EMITTER CURRENT : I
E
(mA)
Fig.11 Base-collector time constant
vs. emitter current
2009.03 - Rev.B
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