ROHM 2SC3415S, 2SC4015, 2SC4061K Schematic [ru]
2SC4061K / 2SC3415S / 2SC4015
Transistors
Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
zFeatures
1) High breakdown voltage. (BV
CEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at V
CB=30V)
3) Ideal for chroma circuit.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
Printed circuit board 1.7mm thick, collector plating 1cm
2SC4061K
2SC3415S
2SC4015
V
V
V
Tstg
CBO
CEO
EBO
I
C
P
Tj
C
2
or larger.
Limits
300
300
5
100
0.2
0.3
1
150
−55 to +150
∗
zPackaging specifications and h
Type 2SC3415S
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
FE
∗
2SC4061K
SMT3
NP
AN
∗
T146
3000
FE
2SC4015
ATV
SPT
NP
NP
−−
TV2
TP
2500
5000
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
Cob
300
CBO
300
CEO
5
EBO
−
−
−
56
FE
50
f
T
−
Unit
V
V
V
mA
W
°C
°C
−
−
−
−
−
−
0.5
−
0.5
−
2
−
180
−
−−
−
100
−
3
zExternal dimensions (Unit : mm)
2SC4061K
0.4
ROHM : SMT3
EIAJ : SC-59
2SC3415S
3
)
15Min.
(
(1) (2) (3)
0.65Max.
µA
µA
MHz
pF
ROHM : SPT
EIAJ : SC-72
2SC4015
ROHM : ATV
I
V
C
=
50µA
V
C
=
100µA
I
V
I
E
=
50µA
V
CB
=
200V
V
EB
=
4V
V
I
C/IB
=
50mA/5mA
−
CE/IC
=
10V/10mA
V
V
CE
=
30V, I
E
=−
V
10mA, f=30MHz
CB
=
30V, I
E
=
0A, f=1MHz
)
1
(
)
2
)
(
3
(
1.6
2.8
0.15
0.3Min.
0~0.1
Each lead has same dimensions
42
3Min.
0.45
0.45
2.5
0.5
5
6.8
4.4
0.9
1.0
14.5
0.5
(2)
(3)
(1)
2.54
2.54
Taping specifications
1.9
2.9
0.95 0.95
(1) Emitter
(2) Base
1.1
0.8
Taping specifications
2.5
0.451.05
(3) Collector
(1) Emitter
(2) Collector
(3) Base
(1) Emitter
(2) Collector
(3) Base
Rev.A 1/3
Transistors
zElectrical characteristics curves
100
2.0mA
1.8mA
1.6mA
80
(mA)
C
COLLECTOR CURRENT : I
1.4mA
1.2mA
60
40
20
0
02 46 810
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output
characteristics ( Ι )
500
200
100
50
20
DC CURRENT GAIN : hFE
10
5
0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain
vs. collector current ( Ι )
2
Ta=−25°C
Ta=100°C
25°C
100°C
25°C
−25°C
BE(sat) (V)
1
0.5
0.2
0.1
0.05
IB=0.2mA
VCE=10V
Ta=25°C
1.0mA
0.8mA
0.6mA
0.4mA
Ta=25°C
5V
IC/IB=10
VBE(sat)
VCE(sat)
100
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
500
200
100
50
20
10
5
DC CURRENT GAIN : hFE
100
2
0.2 0.5 1 2 5 10 20 50
Fig.5 DC current gain
vs. collector current ( ΙΙ )
200
100
(MHZ)
T
50
20
10
2SC4061K / 2SC3415S / 2SC4015
Ta=25°C
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0
04 8121620
Fig.2 Ground emitter output
characteristics ( ΙΙ )
Ta=100°C
25°C
−25°C
COLLECTOR CURRENT : IC (mA)
Ta=25°C
VCE=30
10V
1.0mA
0.8mA
0.6mA
0.4mA
IB=0.2mA
VCE=10V
100
200
100
50
20
10
5
2
1
COLLECTOR CURRENT : IC (mA)
0.5
200 400 600 800
C
°C
Ta=100°
−25
25°C
VCE=10V
1000 1200 1400 1600
BASE TO EMITTER VOLTAGE : VBE (mV)
Fig.3 Ground emitter propagation
characteristics
2
1
FE
0.5
0.2
0.1
0.05
DC CURRENT GAIN : h
0.02
0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (mA)
Ta=25°C
IC/IB=10
Fig.6 Collector-emitter saturation voltage
vs. collector current
20
Ta=25°C
f=1MHz
I
E
=0A
10
5
2
1
5
100
0.02
0.2 0.5 1 2 5 10 20 50
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
TRANSITION FREQUWNCY : f
100
5
−1 −2 −5 −10 −20 −50 −100
Fig.8 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : IE (mA)
0.5
1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
Rev.A 2/3
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