ROHM 2SC2411K Schematic [ru]

2SC2411K

Transistors

Medium Power Transistor (32V, 0.5A)

2SC2411K

zFeatures

1) High I

2) Low V

CMax.

I

CMax. = 0.5A

CE(sat).

Optimal for low voltage operation.

3) Complements the 2SA1036K.

zStructure

Epitaxial planar type
NPN silicon transistor

zAbsolute maximum ratings (Ta = 25°C)

zExternal dimensions (Units : mm)

2SC2411K

(1)

ROHM : SMT3
EIAJ : SC-59

∗ Denotes h

2.9±0.2

1.9±0.2

0.95

0.95
(2)

−0.1

+0.2

2.8±0.2

1.6

(3)

All terminals have same dimensions

+0.1

0.4

−0.05

Abbreviated symbol : C∗

FE

1.1

0.8±0.1

+0.1

0.15

−0.06

(1) Emitter
(2) Base
(3) Collector

+0.2

−0.1

0 ∼ 0.1

0.3 ~ 0.6

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

PC must not be exceeded.

*

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

40 V
32

5

0.5

0.2

150

−55 to +150

V
V
A

W

°C
°C

*

Rev.A 1/3

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

DC current

transfer ratio

Collector-emitter saturation voltage

BV
BV
BV

I
I

V

Transition frequency
Output capacitance

Cob

zPackaging Specifications and h

Package
Code

FE

h

Type
2SC2411K

Basic ordering unit (pieces)

QR

FE

h

FE values are classified as follows:

CBO

CEO

EBO

CBO

EBO

h

FE

CE (sat)

f

T

Min.

Typ. Max. Unit Conditions
40
32

5

−

−

120

−

−

−

−

−

−

−

−

−

−

250

6.5

−

−

−

1
1

390

0.6

−

−

MHz

C

VI
V

C

I

V

E

I

µA
µA

pF

CB

V

EB

V

CE

V

−

I

C/IB

V

CE

V

CB

V

= 100µA
= 1mA
= 100µA

= 20V
= 4V
= 3V, IC = 100mA

= 500mA/50mA

= 5V, IE = −20mA, f = 100MHz
= 10V, IE = 0A, f = 1MHz

Taping

T146
3000

2SC2411K

Item Q R

FE

h

120 to 270 180 to 390

zElectrical characteristic curves

1000

V

CE

=6V

500
200

mA)

(

C

100

Ta=100

50
20

10

5
2

1

0.5

COLLECTOR CURRENT : I

0.2

0.1

BASE TO EMITTER VOLTAGE : V

°C

80

°C

25

°C

−25

°C

−55

°C

0.80.2 0.4 0.90.70.5 1.10.3 1.00.6

BE

(

Fig.1 Grounded emitter propagation

characteristics

V)

100

Ta=25

°C

mA)

(

C

50

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

0.50mA

10 2345

Fig.2 Grounded emitter output

characteristics ( Ι )

0.45mA

I

0.40mA

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

0.10mA

0.05mA

B

=

0A

1

V)

(

Ta

=

25

°C

Ta

lC/l

B

=

10

CE(sat)

0.5

0.2

0.1

0.05

0.02

0.5 1 2 5 10 20 50 100 1000200 500

COLLECTOR SATURATION VOLTAGE : V

CE

(

V)

COLLECTOR CURRENT : I

Fig.4 Collector-emitter saturation voltage

vs. collector current

C

(

mA)

Rev.A 2/3