ROHM 2SB852K Technical data

2SB852K

Transistors

High-gain Amplifier Transistor (−32V, −0.3A)

2SB852K

zFeatures

1) Darlington connection for high DC current gain.

2) Built-in 4kΩ resistor between base and emitter.

3) Complements the 2SD1383K.

zPackaging specifications

Type

Package

FE

h

Marking

Denotes h

Code

FE

Basic ordering unit (pieces)

∗

2SB852K

SMT3

B

U

∗

T146
3000

zCircuit diagram

C

zExternal dimensions (Unit : mm)

2SB852K

(1)Emitter
(2)Base
(3)Collector

2.9

(3)

(2)

0.95 0.95

1.9

0.4

1.1

0.8

1.6

2.8

(1)

0.15

Each lead has same dimensions

0.3Min.

B

R

BE

4kΩ

E : Emitter
B : Base
C : Collector

E

zAbsolute maximum ratings (Ta=25°C)

C

C

Limits

−40

−32

−6

−0.3

0.2

150

−55 to +150

Unit

V
V
V
A

W

°C
°C

∗

Collector-base voltage

Parameter Symbol

Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗ RBE=0Ω

V

V
V

P

Tstg

CBO
CES
EBO

I

Tj

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

∗

1 Measured using pulse current.

∗

2 Transition frequency of the device.

CBO

BV

BV

CES

BV

EBO

I

CBO
EBO

I

FE

h

CE(sat)

V

T

f

Cob − 3 −

−40

−32

−6

−−

−−

−−

−−

−−

5000 −

−−−1.5

200

−

V
V
V

−1

µAVCB= −24V

−1

µAVEB= −4.5V

−−

V

MHz

−

pF

C

= −100µA

I

C

= −1mA

I

E

= −100µA

I

V

CE

= −5V, IC= −0.1A

C

= −200mA, IB= −0.4mA

I
VCE= −5V, IE=10mA, f=100MHz
V

CB

= −10V, IE=0A, f=1MHz

∗

1

∗

2

Rev.B 1/2

2SB852K

Transistors

zElectrical characteristic curves

125

(%)

100

CMax

/P

C

75

50

25

POWER DISSIPATION : P

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Power dissipation curves

100000

50000

20000
10000
5000

2000
1000

DC CURRENT GAIN : hFE

500

200
100

−2 −5 −10 −20 −50 −100 −200 −500
COLLECTOR CURRENT : I

Fig.4 DC current gain vs. collector current ( Ι )

Ta=25°C

VCE= −3V

C

(mA)

−5V

−1000 −2000

−500

VCE= −6V

(mA)

−200

C

−100

−50

−20

−10

−5

COLLECTOR CURRENT : I

−2
0

−0.4 −0.8 −1.2 −1.6 −2.0 −2.4

C

=100°

Ta

BASE TO EMITTER VOLTAGE : V

C

°

°C

55

Ta=25

Ta= −

BE

(V)

Fig.2 Ground emitter propagation characteristisc

VCE= −5V

FE

50000

20000
10000

5000

DC CURRENT GAIN : h

2000
1000

500

−5 −10 −20 −50 −100 −200 −500
COLLECTOR CURRENT : I

Ta=100

55°C

−

25°C

C

°

−1000 −2000

C

(mA)

Fig.5 DC current gain vs. collector current ( ΙΙ )

−100

(mA)

−80

C

−60

−40

−20

COLLECTOR CURRENT : I

−10µA

−9µA

−8µA

0

0 −1

COLLECTOR TO EMITTER VOLTAGE : V

−2 −3 −4 −5

Ta=25°C

−7µA

−6µA

−5µA

−4µA

−3µA

−2µA

IB=0

CE

Fig.3 Ground emitter output characteristics

−20

IC/IB=500

−10

FE

−5

−2

−1

−0.5

DC CURRENT GAIN : h

−0.2

−0.1

−5

Ta= −55°C

100°C

25°C

−10 −20 −50 −100 −200 −500
COLLECTOR CURRENT : I

C

(mA)

Fig.6 Collector-emitter saturation voltage
vs. collector current

(V)

−1000

10000

(MHz)

T

5000

2000
1000

500

200
100

TRANSISION FREQUWNCY : f

50

1 2 5 10 20 50 100 200

EMITTER CURRENT : I

E

(mA)

Ta=25°C

VCE= −5V

100

OUTPUT CAPACITANCE : Cob (pF)

Fig.7 Gain bandwidth product vs. emitter current

50

20

10

5

2

1

−1 −2 −5 −10 −20 −50

COLLECTOR TO BASE VOLTAGE : V

Fig.8 Collector output capacitance
vs. collector-base voltage

Ta=25°C

f=1MHz
I

E

=0A

20

10

5

2

EMITTER INPUT CAPACITANCE : Cib (pF)

1

−1 −2 −5 −10

CB

(V)

EMITTER TO BASE VOLTAGE : V

Fig.9 Emitter input capacitance
vs. emitter-base voltage

Ta=25°C

f=1MHz
I

E

=0A

EB

(V)

Rev.B 2/2