ROHM 2SB1733 Technical data

2SB1733

Transistors

General purpose amplification (−30V, −1A)

2SB1733

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) : max. −350mV

at Ic = −500mA / I

B = −25mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

Single pulse, PW=1ms

∗1
∗2

Each Terminal Mounted on a Recommended land pattern

∗3

Mounted on a 25mm×25mm×

t

0.8mm ceramic substrate

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

−30

−30

−6

−1

−2

0.4

0.8 W

150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

I

CBO
EBO

I

V

CE(sat)

FE

h

T

f

Cob − 7 −

−30

−30

−6

270 − 680

Rev.B 1/2

zDimensions (Unit : mm)

ROHM :TUMT3

zPackaging specifications

Unit

W

°C
°C

V
V
V
A

∗1

A

∗2
∗3

Type

2SB1733

−−

−−

−−

−−

−−

−−150

−

−100

−100

−350 mV

320

Abbreviated symbol : EW

Package
Code
Basic ordering unit (pieces)

V

IC=−10µA

V

IC=−1mA

V

IE=−10µA
nA VCB=−30V
nA VEB=−6V

IC=−500mA, IB=−25mA

− VCE=−2V, IC=−100mA

MHz

−

VCE=−2V, IE=100mA, f=100MHz

V

CB

pF

0.2Max.

(1) Base
(2) Emitter
(3) Collector

∗

=−10V, IE=0A, f=1MHz

Taping

TL

3000

∗

2SB1733

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

VCE=−2V
Pulsed

C

(A)

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

BE

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

Ta=25°C

I

C

f=1MHz

10

(V)

IC/IB=20/1
Pulsed

(V)

CE (sat)

BE (sat)

V

BE(sat)

1

0.1

0.01

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

Ta=25°C

Ta=−40°C

V

CE(sat)

0.001 0.01 0.1 1
COLLECTOR CURRENT : I

Ta=−40°C
Ta=25°C
Ta=100°C

C

(A)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1

(V)

EMITTER CURRENT : I

Ta=25°C

CE

=−2V

V
f=100MHz

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

=

0A

10

Ta=25°C

(V)

Pulsed

CE(sat)

1

IC/IB=20/1

0.1

0.01

0.001

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tstg

100

tr

10

SWITCHING TIME : (ns)

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

IC/IB=10/1

C

Ta=25°C

VCE=−5V

C/IB

I

tf

C

(A)

=20/1

tdon

(A)

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 2/2