ROHM 2SB1732 Technical data

2SB1732

Transistors

Genera purpose amplification(−12V, −1.5A)

2SB1732

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≤ −200mV

at I

C = −500mA / IB = −25mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗

1

Single pulse, PW=1ms

∗

2

Each Terhinal Mounted on a Recommended Land

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

Limits

−15

−12

−6

−1.5

−3

400
150

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Cob − 12 −

−15

−12

−6

270 − 680

Rev.B 1/2

zDimensions (Unit : mm)

ROHM : TUMT3 Abbreviated symbol : EV

zPackaging specifications

Unit

V

Type

V
V
A
A

mW

°C
°C

∗

1

∗

2

2SB1732

−−

−−

−−

−−

−−

−−85

−

−100

−100

−200 mV

400

−

Package
Code
Basic ordering unit (pieces)

V

I

C

=−10µA

V

I

C

=−1mA

V

I

E

=−10µA
nA VCB=−15V
nA VEB=−6V

IC=−500mA, IB=−25mA

CE

− V

MHz

pF

=−2V, IC=−200mA
VCE=−2V, IE=200mA, f=100MHz
V

CB

=−10V, IE=0A, f=1MHz

0.2Max.

(1)Base
(2)Emitter
(3)Collector

Taping

TL

3000

∗

∗

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1

COLLECTOR CURRENT : IC (

Fig.1 DC current gain vs.

10

(A)

C

1

Ta=100°C

25°C

−40°C

0.1

Ta=100°C

25°C

−40°C

collector current

CE

=−2V

V

PULSED

110

A)

CE

=−2V

V

PULSED

1

(V)

CE(sat)

0.1

0.01

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

Ta=−40°C

25°C

100°C

Ta=100°C

25°C

−40°C

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage

vs.collector current
Fig.3 Base-emitter saturation voltage
vs.collector current

1000

(MHz)

T

100

C/IB

=20

I

PULSED

A)

Ta=25°C

CE

=−2V

V
f=100MHz

2SB1732

V)

1

(

CE(sat)

0.1
IC/IB=50

20
10

0.01

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (

Fig.4 Collector-emitter saturation

voltage vs. collector current

100

10

Ta=25°C

E

=0mA

I
f=1MHz

Ta=25°C

PULSED

A)

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1

BASE TO EMITTER VOLTAGE : VBE (V

Fig.5 Grounded emitter propagation

characteristics

TRANSITION FREQUENCY : f

10

1.5

0.001 0.01 0.1

)

EMITTER CURRENT : IE (

Fig.6 Gain bandwidth product

vs. emitter current

110

A)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1

0.1 1

10 100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Rev.B 2/2