ROHM 2SB1731 Technical data

2SB1731

Transistors

Low frequency amplifier

2SB1731

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat) ≤−370mV

at I

C =−1A / IB =−50mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗Single pulse, PW=1ms

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Limits

−30

−30

−6

−1.5

−3

400
150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

T

f

Cob − 13 −

−30

−30

−6

270 − 680

zDimensions (Unit : mm)

ROHM : TUMT3 Abbreviated symbol : FL

zPackaging specifications

Unit

V
V
V
A

∗

A

mW

°C
°C

−−

−−

−−200

−

Type

2SB1731

−−

−−

−−

−100

−100

−370 mV

280

−

Package
Code
Basic ordering unit (pieces)

V

I

C

=−10µA

V

I

C

=−1mA

V

I

E

=−10µA
nA VCB=−30V
nA VEB=−6V

IC=−1A, IB=−50mA

CE

− V

MHz

pF

=−2V, IC=−100mA
VCE=−2V, IE=100mA, f=100MHz
V

CB

=−10V, IE=0A, f=1MHz

0.2Max.

(1)Base
(2)Emitter
(3)Collector

Taping

TL

3000

∗

∗

Rev.A 1/2

2SB1731

Transistors

zElectrical characteristic curves

1000

FE

Ta=100°C

Ta=25°C

Ta=−40°C

VCE=−2V
Pulsed

1

(V)

(V)

BE (sat)

CE (sat)

V

BE(sat)

Ta=−40°C
Ta=25°C
Ta=100°C

10

Ta=25°C

(V)

Pulsed

CE(sat)

1

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

1000

100

Cib

C

(A)

BE

(V)

Ta=25°C

I

C

=

0A

f=1MHz

0.1

V

CE(sat)

0.01

0.001 0.01 0.1 101

BASE SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 10
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

Ta=100°C
Ta=25°C
Ta=−40°C

E

IC/IB=20/1
Pulsed

C

(A)

Ta=25°C
V

CE

=−2V

f=100MHz

(A)

0.1

IC/IB=50/1

IC/IB=20/1

0.01

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

IC/IB=10/1

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tstg

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 10
COLLECTOR CURRENT : I

tf

Fig.6 Switching time

C

(A)

Ta=25°C

VCE=−5V

C/IB

I

tdon

tr

C

(A)

=20/1

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

Cob

EB

(

V)

CB

(

V)

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2