ROHM 2SB1714 Schematic [ru]

Transistors

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-2A / -30V Bipolar transistor

2SB1714

zApplications!!!!!!!!!!!!!!!!!! zzDimensions (Unit : mm)
Low frequency amplification, driver

Features

1) Collector current is high.

2) Low collector-emitter saturation voltage.
(V

CE( sat) d -370mV, at IC= -1.5A, IB= -75mA)

Structure

PNP epitaxial planar sili con transistor

Absolute maximum ratings (T a=25qC)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

DC

Pulse
Power dissipation
Junction temperature

Storage temperature

∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.

Symbol

CBO

V
V

CEO

V

EBO

I

C

CP

I

C

P

tj

tstg

Limits

−30

−30

−6

−2

−4

0.5
2

150

−55 to +150

Unit

V
V
V

∗1
∗2

∗3

A

W

°C
°C

MPT3

(1)Base
(2)Collector
(3)Emitter

Abbreviated symbol : XY

Packaging specifications

Package MPT3
Packaging type

Code
Part No.
2SB1714

Basic ordering unit (pieces)

2SB1714

Taping

T100
1000

z

Electrical characteristics (Ta=25qC)

Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

Pulsed

Symbol

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

Min.

Typ.

Max.

Unit

−30

−

−

−30

−

−

−6

−

−

−

−

−100

−

−

−100



−

−180

−370

270

−

−

−

280

20

680

−

−

V

nA

mV

−

MHz

pF

C

= −1mA

I
I

C

= −10μA

E

= −10μA

I

CB

= −30V

V
V

EB

= −6V

I

C/IB

= −1.5A/ −75A

CE

= −2V, IC= −200mA

V

CE

= −2V, IE=200mA , f=100MHz

V

CB

= −10V , IE=0mA , f=1MHz

V

Rev.A 1/2

Transistors

z

Electrical characteristics curves

10

VBE=2V
Pulsed

(A)

C

Ta=100 C

1

0.1

COLLECTOR CURRENT :I

0.01

0.1 1 10

BASE TO EMITTER CURRENT : VBE (V)

Fig.1 Grounded emitter propagation
characteristics

Ta=25 C

Ta=−40 C

1000

Ta=100 C

FE

Ta=25 C

VCE= −2V
Pulsed

Ta=−40 C

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC(A)

Fig.2 DV current gain
vs. collector current

2SB1714

10

(V)

IC/IB=20/1

Pulsed

CE(sat)

1

0.1

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation voltage
vs. collector current

Ta=−40 C

Ta=25 C

Ta=100 C

10

10

(V)

BE(sat)

1

IC/IB=50/1

=20/1

B

/I

C

I

0.1

BASE SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

IC/IB=10/1

Ta=25 C
Pulsed

COLLECTOR CURRENT : IC (A)

Fig.4 Base-emitter saturation voltage
vs. collectir current

10000

1000

100

10

SWITCHINGTIME : (ns)

1

0.01

0.1 1

COLLECTOR CURRENT : IC(A)

tstg

tf

Ta=

25 C

VCE= −12V
I

C/IB

=20/1

Pulsed

tdon

tr

Fig.7 Switching time

1000

100

TRANSITION FREQUENCY : fT (MHz)

10

0.01 0.1 1 10

EMITTER CURRENT : IE (A)

Fig.5 Gain bandwidth product
vs. emitter curent

10

Ta=25 C

CE

= −2V

V
f=100MHz

1000

Cib

100

IC=0A
f=1MHz
Ta=25 C

Cob

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

0.001 0.1 1000.01 1 10

EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB(V)

Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2