ROHM 2SB1713 Schematic [ru]

2SB1713

Transistors

-3A / -12V Bipolar transistor

2SB1713

zApplications zDimensions (Unit : mm)
Low frequency amplification, driver

zFeatures

1) Collector current is high.

2) Low collector-emitter saturation voltage.
(Typ. = -250mV, at I

C = -1.5A, IB = -30mA)

zStructure

PNP epitaxial planar sili con transistor

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

DC

Pulse
Power dissipation
Junction temperature

Storage temperature

∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.

Symbol

CBO

V
V

CEO

V

EBO

I

C

CP

I

C

P

tj

tstg

Limits

−15

−12

−6

−3

∗1

−6

0.5

∗2
∗3

2

150

−55 to +150

Unit

V
V
V

A

W

°C
°C

zElectrical characteristics (T a=25°C)

Parameter Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Symbol

BV

CEO
CBO

BV
BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

Min.

Typ.

Max.

−12

−

−

−15

−

−

−6

−

−

−

−

−100

−

−

−100

−

−120

−

280

30

−250
680

−

−

∗

270

−

−

MPT3

(1)Base
(2)Collector
(3)Emitter

Part No.
2SB1713

Unit

C

= −1mA

I

V

C

= −10µA

I
I

E

= −10µA

CB

= −15V

V

nA

V

EB

= −6V

mV

IC/IB= −1.5A/ −30mA

CE

= −2V, IC= −500mA

V

−

MHz

CE

= −2V, IE=500mA , f=100MHz

V

pF

CB

= −10V , IE=0mA , f=1MHz

V

Abbreviated symbol : XW

Package MPT3
Packaging type
Code
Basic ordering unit (pieces)

Taping

T100
1000

Rev.A 1/2

Transistors

zElectrical characteristics curves

10

(A)

C

1

25˚C

0.1

125˚C

0.01

COLLECTOR CURRENT : I

IC/IB=20/1
Pulsed

0.001

0.1 1

BASE TO EMITTER CURRENT : VBE (V

Fig.1 Grounded emitter propagation

10

V)

(

BE(sat)

− 40˚C

charactereistics

FE

DC CURRENT GAIN : h

10

)

1000

1000

125˚C

25˚C

− 40˚C

100

VCE=−2V
Pulsed

10

0.001 0.01 0.1

COLLECTOR CURRENT : IC (

Fig.2 DC current gain

vs. collector current

110

A)

Ta=25°C
VCE=2V
f=100MHz

2SB1713

1

V)

(

CE(sat)

0.1

0.01

IC/IB=20/1
Pulsed

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (

Fig.3 Collector-emitter saturation voltage

1000

vs. collector current

Cib

125˚C

25˚C

− 40˚C

I

C

=0A
f=1MHz
Ta=25

10

A)

°C

1

BASE SATURATION VOLTAGE : V

0.1

0.001 0.01 0.1 1

25˚C

− 40˚C

125˚C

IC/IB=20/1
Pulsed

COLLECTOR CURRENT : IC (

Fig.4 Base−emitter saturation voltage

vs.collector current

Cob

100

TRANSITION FREQUENCY : fr (MHz)

10

10

A)

0.01 0.1 1 10

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

E

(A)

100

10

EMITTER INPUT CAPACITANCE : Cib (pF)

0.001 0.01 0.1 1 10

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V

Fig 6. Emitter input capacitance vs. emitter-base volatage

Collector output capacitance vs. collector-base voltage

100

CB

(V)

Rev.A 2/2