ROHM 2SB1710 Technical data

2SB1710

Transistors

General purpose amplification (−30V, −1A)

2SB1710

zApplicat ion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE

(sat) ≤ −350mV

at Ic = −500mA / I

B

= −25mA

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1
∗2

Parameter Symbol

Single pulse, PW=1ms
Each Terminal Mounted on a Recommended

CBO

V
VCEO
VEBO

IC
ICP
PC

Tj

Tstg

Limits

−30

−30

500
150

−55~+150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Unit

V

CBO
CEO
EBO

FE
T

V
V
A

∗1

A

∗2

mW

°C
°C

−30

−30

−6

270 − 680

−6

−1

−2

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

Cob − 7 −

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

zPackaging specifications

Type

2SB1710

−−

−−

−−150

−

−−

−−

−−

−100

−100

−350 mV

320

−

V
V

V
nA VCB=−30V
nA VEB=−6V

− V

MHz

pF

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Package
Code
Basic ordering unit (pieces)

I

C

=−10µA

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

IC=−1mA

E

=−10µA

I

IC=−500mA, IB=−25mA

CE

=−2V, IC=−100mA

∗

VCE=−2V, IE=100mA, f=100MHz

CB

=−10V, IE=0A, f=1MHz

V

Taping

TL

3000

∗

Rev.A 1/2

2SB1710

0

1

)

e

1

)

e

.5

1

1

0

)

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1 1

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

VCE=−2V
Pulsed

C

(A)

Fig.1 DC current gain

vs. collector current

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

BE

(V)

Ta=25°C

I

C

=

0A

f=1MHz

10

(V

IC/IB=20/1
Pulsed

(V)

CE (sat)

BE (sat)

V

BE(sat)

1

0.1

0.01

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

Ta=25°C

Ta=−40°C

V

CE(sat)

0.001 0.01 0.1
COLLECTOR CURRENT : I

Ta=−40°C

Ta=25°C

Ta=100°C

Fig.2 Collector-emitter saturation voltag

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1
EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

C

(A)

Ta=25°C

CE

=−2V

V
f=100MHz

E

(A)

10

Ta=25°C

(V

Pulsed

CE(sat)

1

IC/IB=20/1

0.1

0.01

0.001

0.001 0.01 0.1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltag

vs. collector current

1000

tstg

100

tr

10

SWITCHING TIME : (ns)

1

0.01 0.1
COLLECTOR CURRENT : I

Fig.6 Switching time

IC/IB=10/1

C

Ta=25°C

VCE=−5V

C/IB

I

tf

C

(A)

=20/1

tdon

(A)

10

1

0.1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF

COLLECTOR TO BASE VOLTAGE : V

Fig.7 Collector output capacitance

11010

EB

V)

(

CB

V)

(

vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.A 2/2