ROHM 2SB1709 Technical data
2SB1709
Transistors
Genera purpose amplification(−12V, −1.5A)
2SB1709
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
≤ −200mV
at I
C
= −500mA / IB = −25mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗
1
Single pulse, PW=1ms
∗
2
Each Terhinal Mounted on a Recommended Land
CBO
V
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Limits
−15
−12
−6
−1.5
−3
500
150
−55~+150
BV
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
−15
−12
−6
270 − 680
Cob − 12 −
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
zPackaging specifications
Unit
V
Type
V
V
A
A
mW
°C
°C
∗
1
∗
2
2SB1709
−−
−−
−−
−−
−−
−−85
400
−
−100
−100
−200 mV
V
V
V
nA VCB=−15V
nA VEB=−6V
− VCE=−2V, IC=−200mA
MHz
−
pF
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
Package
Code
Basic ordering unit (pieces)
C
=−10µA
I
C
=−1mA
I
E
=−10µA
I
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
IC=−500mA, IB=−25mA
∗
VCE=−2V, IE=200mA, f=100MHz
V
CB
=−10V, IE=0A, f=1MHz
Taping
TL
3000
∗
Rev.B 1/2
Transistors
0
e
)
0
)
.5
0
0
)
)
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1
COLLECTOR CURRENT : IC (
Fig.1 DC current gain vs.
Ta=100°C
25°C
−40°C
collector current
CE
=−2V
V
PULSED
11
A)
(A)
C
10
1
Ta=100°C
25°C
−40°C
0.1
CE
=−2V
V
PULSED
1
(V
CE(sat)
0.1
0.01
0.001
COLLECTOR SATURATION VOLTAGE : V
0.001 0.01 0.1 1 10
Fig.2 Collector-emitter saturation voltag
Fig.3 Base-emitter saturation voltage
vs.collector current
1000
(MHz)
T
100
Ta=−40°C
25°C
100°C
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC (
vs.collector current
I
C/IB
=20
PULSED
A)
Ta=25°C
V
CE
f=100MHz
=−2V
2SB1709
V
1
(
CE(sat)
0.1
IC/IB=50
20
10
0.01
0.001
COLLECTOR SATURATION VOLTAGE : V
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : IC (
Fig.4 Collector-emitter saturation
voltage vs. collector current
100
10
Ta=25°C
PULSED
A)
Ta=25°C
IE=0mA
f=1MHz
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1
BASE TO EMITTER VOLTAGE : VBE (V
Fig.5 Grounded emitter propagation
characteristics
TRANSITION FREQUENCY : f
10
1
0.001 0.01 0.1
)
Fig.6 Gain bandwidth product
EMITTER CURRENT : IE (
vs. emitter current
11
A)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
1
0.1 1
COLLECTOR TO BASE VOLTAGE : VCB (V
10 10
Fig.7 Collector output capacitance
vs. collector-base voltage
Rev.B 2/2
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