ROHM 2SB1707 Technical data

Transistors

Low frequency amplifier

2SB1707

zApplicat ion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large. (4A)

2) V

CE(sat)

≤ −250mV

At I

C

= −2A / IB = −40mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗Single pulse, PW=1ms

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

Limits

Unit

−15

−12

−6

−4

−8

500

mW

150

BV
BV
BV

I
I

CE(sat)

V

CBO
EBO

h

f

CBO
CEO

EBO

FE
T

−15

−12

−6

270 − 680

Cob − 60 −

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

zPackaging specifications

V
V
V
A

∗

A

Type

2SB1707

°C
°C

−−

−−

−−150

−

−−

−−

−−

−100

−100

−250 mV

250

MHz

−

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Package
Code
Basic ordering unit (pieces)

V

C

= −10µA

I

V

C

= −1mA

I

V

E

= −10µA

I

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.16

Each lead has same dimensions

nA VCB= −15V
nA VEB= −6V

IC= −2A, IB= −40mA

CE

− V

= −2V, IC= −200mA

VCE= −2V, IE=200mA, f=100MHz
V

CB

pF

= −10V, IE=0A, f=1MHz

2SB1707

0.6

~

0.3

Taping

TL

3000

∗

∗

Rev.B 1/2

Transistors

0

)

F

e

0

F

0

)

s

)

)

0

0

zElectrical characteristic curves

1000

FE

Ta=125°C

100

Ta=25°C
Ta= −40°C

2SB1707

1

(V

Ta=125°C

0.1

Ta=25°C
Ta= −40°C

IC/IB=20/1
Pulsed

(V)

BE (sat)

10

Ta= −40°C
Ta=25°C
Ta=125°C

1

IC/IB=20/1
Pulsed

DC CURRENT GAIN : h

VCE= −2V
Pulsed

10

0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I

Fig.1 DC Current Gain vs.

Collector Current

10

VCE= −2V
Pulsed

(A)

1

0.1

0.01

COLLECTOR CURRENT : IC

0.001

0.1 1 1
BASE TO EMITTER CURRENT : VBE

Ta=125°C
Ta=25°C
Ta= −40°C

Fig.4 Grounded Emitter

Propagation Characteristic

10000

1000

(A)

C

Ta=25°C

CE

= −5V

V

C/IB

=20/1

I
Pulsed

0.01

0.001

0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION VOLTAGE : VCE (sat)

ig.2 Collector-Emitter Saturation Voltag

vs. Collector Current

1000

Cib

Cob

100

10

Ta

=

25

°C

I

C

=

0A

f=1MHz

1

EMITTER INPUT CAPACITANCE : Cib (pF)

0.001 0.01 0.1 1 10 100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF

(V

EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : V

Fig.5 Collector Output Capacitance

vs. Collector-Base Voltage
Emitter Input Capacitance
vs. Emitter-Base Voltage

0.1

0.01

BASE SATURATION VOLTAGE : V

0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I

ig.3 Base-emitter saturation voltage

vs. Collector Current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1 1

CB(V

EMITTER CURRENT : I

Fig.6 Gain Bandwidth Product

vs. Emitter Current

C

(A)

Ta=25°C

CE

= −2V

V
f=100MHz

(A)

E

100

10

SWITCHING TIME : (ns)

1

0.01 0.1 1 1
COLLECTOR CURRENT : I

Fig.7 Switching Time

Tstg

Tdon

C

Tf

Tr

(A)

Rev.B 2/2