ROHM 2SB1705 Technical data

Transistors

Low frequency amplifier

2SB1705

zApplicat ion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) V

CE(sat)

≤ −250mV

At I

C

=−1.5A / IB=−30mA

zExternal dimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

2SB1705

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

Single pulse, PW=1ms

∗1
∗2

Each Termminal Mounted on a Recommended

Parameter Symbol

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance

∗ Pulsed

zEquivalent circ uit

Limits

−15

−12

−6

−3

−6

500
150

CBO

BV
BV

CEO
EBO

BV

I

CBO
EBO

I

V

CE(sat)

h

FE

f

T

Cob − 30 −

Unit

V
V
V
A

∗1

A

∗2

mW

°C
°C

−15

−12

−6

−−

−−

−−

−−

−−

−−120

270 − 680

280

−

(3)

V
V
V

−100

−100

nA VCB= −15V
nA VEB= −6V

−250 mV

− VCE= −2V, IC= −500mA

MHz

−

pF

(2)(1)

IC= −10µA

C

= −1mA

I
IE= −10µA

IC= −1.5A, IB= −30mA

VCE= −2V, IE=500mA, f=100MHz
V

CB

= −10V, IE=0A, f=1MHz

∗

∗

Rev.C 1/2

Transistors

0

)

0

0

)

0

0

F

e

zPackaging specifications

Package

Type

Code
Basic ordering unit (pieces)

2SB1705

zElectrical characteristic curves

1000

125˚C

25˚C

FE

− 40˚C

100

DC CURRENT GAIN : h

VCE=−2V

Pulsed

10

0.001 0.01 0.1

COLLECTOR CURRENT : IC (

Fig1. DC current gain

vs. collector current

10

(A)

C

1

11

A)

Taping

TL

3000

1

V

(

CE(sat)

0.1

0.01

IC/IB=20/1
Pulsed

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage

vs. collector current

125˚C

25˚C

− 40˚C

1000

A)

Ta=25°C
VCE=2V
f=100MHz

10

V

(

BE(sat)

1

− 40˚C

125˚C

IC/IB=20/1

BASE SATURATION VOLTAGE : V

Pulsed

0.1

1

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (

Fig.3 Base−emitter saturation voltage

1000

Cib

2SB1705

25˚C

vs.collector current

A)

I

C

=0A
f=1MHz
Ta=25

1

°C

25˚C

0.1

125˚C

0.01

COLLECTOR CURRENT : I

IC/IB=20/1
Pulsed

0.001

0.1 1

BASE TO EMITTER CURRENT : VBE (V

Fig.4 Grounded emitter propagation

− 40˚C

charactereistics

100

TRANSITION FREQUENCY : fr (MHz)

10

1

0.01 0.1 1 1

)

EMITTER CURRENT : I

Fig.5 Gain bandwidth product

vs. emitter current

E

(A)

Cob

100

10

EMITTER INPUT CAPACITANCE : Cib (pF)

0.001 0.01 0.1 1 10

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER TO BASE VOLTAGE : VEB(V)

COLLECTOR TO BASE VOLTAGE : V

ig 6. Collector output capacitance vs. collector-base voltag

Emitter input capacitance vs. emitter-base volatage

100

CB

(V)

Rev.C 2/2