ROHM 2SB1697 Technical data

2SB1697

Transistors

Low Frequency Amplifier (-12V, -2A)

2SB1697

zFeatures

Low V

CE(sat)

V

CE(sat) ≤ −180mV

(I

C /IB=−1A/−50mA)

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature
Storage temperature

∗1

Single pulse, PW=1ms

∗2

When mounted on a 40x40x0.7 mm ceramic board.

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

∗ Pulsed

Limits

−15

−12

−6

−2

−4

500
150

−55 to +150

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

V

CE(sat)

FE

h

T

f

Unit

V
V
V

A(DC)

A(Pulse)

mW

°C
°C

−15

−12

−6

−−

−−

−−100

270 − 680

−

Cob − 15 −

zExternal dimensions (Unit : mm)

1.0

0.4

1.5

3.0

1.5

ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89

(1)

(2)

0.5

(3)

0.4

0.4

Each lead has same dimensions

Abbreviated symbol: FV

zPackaging specifications

Package

Type

2SB1697

∗1

∗2

Code
Basic ordering unit (pieces)

MHz

−

V

I

C

= −10µA

V

IC= −1mA

V

IE= −10µA
nA VCB= −15V
nA VEB= −6V

IC/IB= −1A/ −50mA

− V

CE

= −2V, IC= −200mA
VCE= −2V, IE=200mA, f=100MHz
V

CB

pF

=−10V, IE=0A, f=1MHz

−−

−−

−−

−100

−100

−180 mV

360

4.0

2.5

0.5

4.5

1.6

1.5

(1)Base
(2)Collector
(3)Emitter

Taping

T100
1000

∗

∗

Rev.A 1/2

2SB1697

Transistors

zElectrical characteristic curves

−10

(mA)

C

−1

Ta=100°C

−0.1

−0.01

COLLECTOR CURRENT : I

−0.001
0 −0.5 −1 −1.5

BASE TO EMITTER CURRENT : V

Ta=−40°C

Fig.1 Grounded emitter
propagation characteristics

−1

Ta=25°C

(mV)

Pulsed

BE(sat)

−0.1

Ta=25°C

VCE=−2V

Ta=25°C

Pulsed

BE

1000

Ta=25°C

Ta=−40°C

VCE=−2V
Pulsed

COLLECTOR CURRENT : I

(V)

FE

100

DC CURRENT GAIN : h

10

−0.001 −0.01 −0.1 −1 −10

Fig.2 DC current gain vs. collector current

1000

Ta=25°C

CE

=−2V

V
f=100MHz

(MHz)

T

100

Ta=100°C

C

(mA)

10

(V)

(V)

CE (sat)

V

BE (sat)

BASE SATURATION VOLTAGE : V

BE(sat)

1

0.1

Ta=−40°C
Ta=25°C

Ta=100°C

Ta=100°C

Ta=25°C

0.01

0.001

COLLECTOR SATURATION VOLTAGE : V

Ta=−40°C

0.01 0.1 101

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation
voltage vs.collector current
Base-emitter saturation
voltage vs.collector current

1000

100

Cib

V

CE(sat)

IC/IB=20
Pulsed

C

(A)

Ta=25

I

E

=

0A

f=1MHz

°C

IC/IB=50

−0.01

IC/IB=20

−0.001

COLLECTOR SATURATION VOLTAGE : V

IC/IB=10

−0.01 −0.1 −1 −10

COLLECTOR CURRENT : I

Fig.4 Collector-emitter saturation
voltage vs.collector current

0.01

TRANSITION FREQUENCY : f

10

0.001

0.01 0.1 1 10

C

(A)

EMITTER CURRENT : I

E

(A)

Fig.5 Gain bandwidth product vs.
emitter current

10

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

−1 −10 −100−0.1

Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.

Cob

EB

V)

(

CB

V)

(

emitter-base voltage

Rev.A 2/2