ROHM 2SB1695K Technical data

2SB1695K
Transistors

Low frequency amplifier

2SB1695K

!!!!Application
Low frequency amplifier Driver
!!!!Features
1) A collector current is large.
2) V
CE(sat) −370mV
At I
C =− 1A / IB = −50mA
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage Collector-emitter voltage
Emitter-base voltage Collector current
Power dissipation Junction temperature
Range of storage temperature
Single pulse, PW=1ms
CBO
V V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance
Pulsed
Limits
30
30
6
1.5
3
200 150
55~+150
BV BV BV
I I
CE(sat)
V
CBO EBO
h
f
CBO CEO EBO
FE T
30
30
6
270 680
Cob 13
!!!!External dimensions (Units : mm)
0.4
0.3Min.
ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346
!!!!Packaging specifications
Unit
V V V A
A
mW
°C °C
−−
−−
−−200
Type 2SB1695K
−−
−−
−−
100
100
370 mV
280
V V
V nA VCB=−30V nA VEB=−6V
V
MHz
pF
)
1
(
1.9
2.9
)
2
)
(
3
(
0.15
Abbreviated symbol : FL
Package Code Basic ordering unit (pieces)
I
C C
I I
E
0.95 0.95
1.6
2.8
1.1
0.8
0~0.1
Each lead has same dimensions
=−10µA =−1mA
=−10µA
(1) Emitter (2) Base (3) Collector
IC=−1A, IB=−50mA
CE
=−2V, IC=−100mA
VCE=−2V, IE=100mA, f=100MHz
CB
=−10V, IE=0A, f=1MHz
V
Taping
T146 3000
1/2
2SB1695K
Transistors
!!!!Electrical characteristic curves
1000
FE
Ta=100°C
Ta=25°C
Ta=−40°C
VCE=−2V Pulsed
1
(V)
(V)
BE (sat)
CE (sat)
V
BE(sat)
Ta=−40°C Ta=25°C Ta=100°C
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10 COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=−2V Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Ta=25°C
Ta=−40°C
Fig.4 Grounded emitter propagation
characteristics
1000
100
10
Cib
Cob
C
(A)
BE
(V)
Ta=25°C
I
C
=
0A
f=1MHz
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 101
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10 EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
(A)
C
0.01
10
1
P
W
=100ms
0.1
DC Operation
Ta=100°C Ta=25°C Ta=−40°C
Ta=25°C V f=100MHz
E
(A)
1ms
10ms
IC/IB=20/1 Pulsed
C
(A)
CE
=−2V
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 10 COLLECTOR CURRENT : I
tf
Fig.6 Switching time
C
(A)
Ta=25°C
VCE=−5V
C/IB
I
tdon
tr
C
(A)
=20/1
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
EB
(
V)
CB
Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Ta=25°C
COLLECTOR CURRENT : I
Single Pulse
0.001
0.1 1 10 100
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Safe Operating Area
2/2
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