2SB1695K
Transistors
Low frequency amplifier
2SB1695K
!!!!Application
Low frequency amplifier
Driver
!!!!Features
1) A collector current is large.
2) V
CE(sat) ≤ −370mV
At I
C =− 1A / IB = −50mA
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, PW=1ms
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Limits
−30
−30
−6
−1.5
−3
200
150
−55~+150
BV
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
−30
−30
−6
270 − 680
Cob − 13 −
!!!!External dimensions (Units : mm)
0.4
0.3Min.
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
!!!!Packaging specifications
Unit
V
V
V
A
∗
A
mW
°C
°C
−−
−−
−−200
−
Type
2SB1695K
−−
−−
−−
−100
−100
−370 mV
280
−
V
V
V
nA VCB=−30V
nA VEB=−6V
− V
MHz
pF
)
1
(
1.9
2.9
)
2
)
(
3
(
0.15
Abbreviated symbol : FL
Package
Code
Basic ordering unit (pieces)
I
C
C
I
I
E
0.95 0.95
1.6
2.8
1.1
0.8
0~0.1
Each lead has same dimensions
=−10µA
=−1mA
=−10µA
(1) Emitter
(2) Base
(3) Collector
IC=−1A, IB=−50mA
CE
=−2V, IC=−100mA
∗
VCE=−2V, IE=100mA, f=100MHz
CB
=−10V, IE=0A, f=1MHz
V
Taping
T146
3000
∗
1/2
2SB1695K
Transistors
!!!!Electrical characteristic curves
1000
FE
Ta=100°C
Ta=25°C
Ta=−40°C
VCE=−2V
Pulsed
1
(V)
(V)
BE (sat)
CE (sat)
V
BE(sat)
Ta=−40°C
Ta=25°C
Ta=100°C
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
VCE=−2V
Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Ta=25°C
Ta=−40°C
Fig.4 Grounded emitter propagation
characteristics
1000
100
10
Cib
Cob
C
(A)
BE
(V)
Ta=25°C
I
C
=
0A
f=1MHz
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 101
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1 10
EMITTER CURRENT : I
Fig.5 Gain bandwidth product
vs. emitter current
(A)
C
0.01
10
1
P
W
=100ms
0.1
DC Operation
Ta=100°C
Ta=25°C
Ta=−40°C
Ta=25°C
V
f=100MHz
E
(A)
1ms
10ms
IC/IB=20/1
Pulsed
C
(A)
CE
=−2V
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
IC/IB=10/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 10
COLLECTOR CURRENT : I
tf
Fig.6 Switching time
C
(A)
Ta=25°C
VCE=−5V
C/IB
I
tdon
tr
C
(A)
=20/1
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
EB
(
V)
CB
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Ta=25°C
COLLECTOR CURRENT : I
Single Pulse
0.001
0.1 1 10 100
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Safe Operating Area
2/2