Datasheet 2SB1694 Datasheet (ROHM)

2SB1694

Transistors

General purpose amplification (−30V, −1A)

2SB1694

zApplication

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≤ −380mV

At I

C = −500mA / IB = −25mA

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage

Emitter-base voltage
Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗Single pulse, PW=1ms

Parameter Symbol

V
V
V

Tstg

Limits

C

C

−30

−30

−6

−1

−2

200
150

−55~+150

CBO
CEO
EBO

I

I

CP

P

Tj

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗1 Pulsed

Unit

V
V
V
A

∗

A

mW

°C
°C

CBO

BV

CEO

BV

EBO

BV

CBO

I

EBO

I

CE(sat)

V

FE

h

T

f

Cob − 7 −

−30

−30

−6

270 − 680

zDimensions (Units : mm)

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

zPackaging specifications

Type

2SB1694

−−

−−

−−

320

−100

−100

−380 mV

−

−−

−−

−−180

−

)

1

(

0.65

)

2

)

3

(

0.3

1.25

2.1

0.15

0.1Min.

0~0.1

Abbreviated symbol : ES

1.3

(

0.65

0.2

0.9

0.7

Each lead has same dimensions

Package
Code
Basic ordering unit (pieces)

V

I

C

=−10µA

V

I

C

=−1mA

V

I

E

=−10µA
nA VCB=−30V
nA VEB=−30V

IC=−500mA, IB=−25mA

− V

CE

=−2V, IC=−100mA

MHz

VCE=−2V, IE=100mA, f=100MHz

CB

=−10V, IE=0A, f=1MHz

V

pF

2.0

(1) Emitter
(2) Base
(3) Collector

Taping

T106
3000

∗1

∗1

Rev.B 1/2

2SB1694

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1 1

Ta=100°C

Ta=25°C

Ta=−40°C

COLLECTOR CURRENT : I

Fig.1 DC current gain

vs. collector current

VCE=−2V
Pulsed

C

1

VCE=−2V
Pulsed

(A)

C

COLLECTOR CURRENT : I

0.001

Ta=100°C

0.1

0.01

0 0.5 1 1.5

BASE TO EMITTER CURRENT : V

Ta=25°C

Ta=−40°C

Fig.4 Grounded emitter propagation

characteristics

100

Cib

Cob

10

(A)

BE

Ta=25°C

IC=

f=1MHz

10

(V)

IC/IB=20/1
Pulsed

(V)

CE (sat)

BE (sat)

1

0.1

0.01

0.001 0.01 0.1 1

BASE SATURATION VOLTAGE : V

COLLECTOR SATURATION VOLTAGE : V

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage
vs. collector current

1000

(MHz)

T

100

TRANSITION FREQUENCY : f

10

0.01 0.1 1

(V)

(A)

C

10

0.1

0A

Ta=−40°C
Ta=25°C

V

BE(sat)

Ta=100°C

Ta=25°C

Ta=−40°C

V

CE(sat)

COLLECTOR CURRENT : I

EMITTER CURRENT : I

Ta=100°C

C

(A)

Ta=25°C
V

CE

=−2V

f=100MHz

E

(A)

Fig.5 Gain bandwidth product

vs. emitter current

P

W

=100ms

1ms

10ms

1

DC Operation

10

Ta=25°C

(V)

Pulsed

CE(sat)

1

IC/IB=20/1

0.1

0.01

0.001

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

IC/IB=50/1

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

tstg

100

tf

tr

10

SWITCHING TIME : (ns)

1

0.01 0.1 1
COLLECTOR CURRENT : I

Fig.6 Switching time

IC/IB=10/1

C

(A)

Ta=25°C

VCE=−5V
I

C/IB

=20/1

C

(A)

tdon

0.01

Ta=25°C

COLLECTOR CURRENT : I

1

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR TO BASE VOLTAGE : V

1 10 1000.1

EB

V)

(

CB

V)

(

Fig.7 Collector output capacitance

vs. collector-base voltage

Single Pulse

0.001

0.1 1 10 100

COLLECTOR TO EMITTER VOLTAGE : V

Fig.8 Safe Operating Area

CE

(V)

Emitter input capacitance
vs. emitter-base voltage

Rev.B 2/2

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Appendix1-Rev3.0