ROHM 2SB1694 Technical data

2SB1694
Transistors
General purpose amplification (−30V, 1A)
2SB1694
zApplication
Low frequency amplifier Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low. V
CE(sat) −380mV
At I
C = −500mA / IB = −25mA
zAbsolute maximum ratings (Ta=25°C)
Collector-base voltage Collector-emitter voltage
Emitter-base voltage Collector current
Power dissipation Junction temperature
Range of storage temperature
Single pulse, PW=1ms
Parameter Symbol
V V V
Tstg
Limits
C
C
30
30
6
1
2
200 150
55~+150
CBO CEO EBO
I
I
CP
P
Tj
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance
1 Pulsed
Unit
V V V A
A
mW
°C °C
CBO
BV
CEO
BV
EBO
BV
CBO
I
EBO
I
CE(sat)
V
FE
h
T
f
Cob 7
30
30
6
270 680
zDimensions (Units : mm)
ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323
zPackaging specifications
Type
2SB1694
−−
−−
−−
320
100
100
380 mV
−−
−−
−−180
)
1
(
0.65
)
2
)
3
(
0.3
1.25
2.1
0.15
0.1Min.
0~0.1
Abbreviated symbol : ES
1.3
(
0.65
0.2
0.9
0.7
Each lead has same dimensions
Package Code Basic ordering unit (pieces)
V
I
C
=−10µA
V
I
C
=−1mA
V
I
E
=−10µA nA VCB=−30V nA VEB=−30V
IC=−500mA, IB=−25mA
V
CE
=−2V, IC=−100mA
MHz
VCE=−2V, IE=100mA, f=100MHz
CB
=−10V, IE=0A, f=1MHz
V
pF
2.0
(1) Emitter (2) Base (3) Collector
Taping
T106 3000
1
1
Rev.B 1/2
2SB1694
Transistors
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
VCE=−2V Pulsed
C
1
VCE=−2V Pulsed
(A)
C
COLLECTOR CURRENT : I
0.001
Ta=100°C
0.1
0.01
0 0.5 1 1.5
BASE TO EMITTER CURRENT : V
Ta=25°C
Ta=−40°C
Fig.4 Grounded emitter propagation
characteristics
100
Cib
Cob
10
(A)
BE
Ta=25°C
IC=
f=1MHz
10
(V)
IC/IB=20/1 Pulsed
(V)
CE (sat)
BE (sat)
1
0.1
0.01
0.001 0.01 0.1 1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage vs. collector current
1000
(MHz)
T
100
TRANSITION FREQUENCY : f
10
0.01 0.1 1
(V)
(A)
C
10
0.1
0A
Ta=−40°C Ta=25°C
V
BE(sat)
Ta=100°C
Ta=25°C
Ta=−40°C
V
CE(sat)
COLLECTOR CURRENT : I
EMITTER CURRENT : I
Ta=100°C
C
(A)
Ta=25°C V
CE
=−2V
f=100MHz
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
P
W
=100ms
1ms
10ms
1
DC Operation
10
Ta=25°C
(V)
Pulsed
CE(sat)
1
IC/IB=20/1
0.1
0.01
0.001
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
IC/IB=50/1
COLLECTOR CURRENT : I
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tstg
100
tf
tr
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 COLLECTOR CURRENT : I
Fig.6 Switching time
IC/IB=10/1
C
(A)
Ta=25°C
VCE=−5V I
C/IB
=20/1
C
(A)
tdon
0.01
Ta=25°C
COLLECTOR CURRENT : I
1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
1 10 1000.1
EB
V)
(
CB
V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Single Pulse
0.001
0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.8 Safe Operating Area
CE
(V)
Emitter input capacitance vs. emitter-base voltage
Rev.B 2/2
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