ROHM 2SB1690K Technical data
2SB1690K
Transistors
General purpose amplification(−12V, −2A)
2SB1690K
zApplica tions
Low frequency amplifier
Deiver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat) ≤ −180mV
at I
C= −1A / IB= −50mA
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse Pw=1ms
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Pulsed
BV
BV
BV
I
I
V
CE(sat)
Cob
h
CBO
EBO
f
CBO
CEO
EBO
FE
T
−15
−12
−6
−2
−4
200
150
mW
Typ. Max. Unit Conditions
Min.
−15
−12
270
−
−
−
−6
−
−
−
−
−120
−
−
360
−
15
−
zExternal dimensions (Units : mm)
0.4
0.15
0.3Min.
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
abbreviated symbol : FV
zPackaging specifications
V
V
V
A
∗
A
Type
°C
°C
V
C
V
V
nA
nA
mV
−
pF
= −10µA
I
I
C
= −1mA
I
E
= −10µA
V
CB
= −15V
V
EB
= −6V
C
= −1A, IB= −50mA
I
CE
= −2V, IC= −200mA
V
CE
= −2V, IE= −200mA , f=100MHz
CB
= −10V, IE=0mA, f=1MHz
V
−
−
−
−100
−100
−180
680
MHz
− V
−
)
3
(
1.6
2.8
0~0.1
Package
Code
Basic ordering
unit (pieces)
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.1
0.8
(1) Emitter
(2) Base
(3) Collector
Taping
T146
3000
∗
∗
Rev.A 1/2
Transistors
zElectrical characteristic curves
2SB1690K
1000
FE
DC CURRENT GAIN : h
100
0.001 0.01 0.1
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
10
(A)
C :
1
Ta=100°C
25°C
−40°C
0.1
0.01
COLLECTOR CURRENT I
0.001
0 0.5
BASE TO EMITTER VOLTAGE : VBE (V
Fig.4 Grounded emitter propagation
characteristics
1000
V
CE
= −2V
PULSED
11
CE
V
PULSED
V)
(
BE(sat) :
BASE SATURATION VOLTAGE : V
0
= −2V
(MHz)
T :
TRANSITION FREQUENCY : f
1
)
Ta=25°C
I
E
=0mA
f=1MHz
10
(V)
CE(sat)
1
−40°C
25°C
25°C
−40°C
Ta=100°C
0.1
Ta=100°C
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (
I
C/IB
PULSED
A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs.collector current
1000
100
10
0.001 0.01 0.1
EMITTER CURRENT : IE (
Ta=25°C
CE= −2V
V
f=100MHz
110
A)
Fig.5 Gain bandwidth product
vs. emitter current
=20
1
V)
(
CE(sat):
0.1
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
0.01
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
100
10
SWITCHING TIME : (ns)
1
0.001 0.01 0.1 1
COLLECTOR CURRENT : I
IC=20 IB1= −20IB2
Ta=25°C
f=100MHz
tstg
tr
tf
Fig.6 Switching time
Ta=25°C
PULSED
A)
tdon
C
(A)
cib
100
EMITTER INPUT CAPACITANCE:Cib (pF)
10
COLLECTOR OUTPUT CAPACITANCE:Cob(pF)
0.1 1
EMITTER TO BASE VOLTAGE : VEB (V
cob
10
)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A 2/2
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