ROHM 2SB1690 Technical data

2SB1690

Transistors

General purpose amplification(−12V, −2A)

2SB1690

zApplications zExternal dimensions (Unit : mm)
Low frequency amplifier

Deiver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat)

: max. −180mV

at I

C

= −1A / IB= −50mA

zPackaging specifications

Type

2SB1690

Package
Code

Basic ordering
unit (pieces)

Taping

TL

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature
Storage temperature

∗1 Single pulse Pw=1ms
∗2 Each terminal mounted on a recommended land
∗3 Mounted on a 25mm×25mm×

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

t

0.8mm ceramic substrate

−55 to +150

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

Pulsed

∗

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

T

f

Cob

Min.

−15

−12

−6

−

−

−

270

−

−

−15

−12

−6

−2

−4

0.5

150

Typ. Max. Unit Conditions

−

−

−

−

−

−

−

−100

−

−100

−120

−180

680

−

360

− V

15

−

TSMT3

2.9

0.4

(3)

(2)

(1)

0.950.95

(1) Base
(2) Emitter
(3) Collector

V
V
V
A

∗1

A

∗2

W

∗3

W1

°C
°C

1.9

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

V

C

=−10µA

I

V

I

C

=−1mA

V

I

E

=−10µA

nA

V

CB

=−15V

nA

V

EB

=−6V

mV

C

=−1A, IB=−50mA

−

MHz

pF

I
V

CE

=−2V, IC=−200mA

CE

=−2V, IE=200mA, f=100MHz

CB

=−10V, IE=0mA, f=1MHz

V

∗

∗

Rev.B 1/2

Transistors

0

e

e

1

0

1

0

zElectrical characteristic curves

1000

FE

DC CURRENT GAIN : h

Ta=100°C

25°C

−40°C

CE

=−2V

V

PULSED

V)

(V)

(

CE(sat)

BE(sat) :

0.01

2SB1690

10

1

−40°C
25°C

25°C

−40°C

Ta=100°C

0.1

Ta=100°C

C/IB

=20

I

PULSED

V)

(

CE(sat):

0.01

1

0.1

IC/IB=50/1

IC/IB=20/1
IC/IB=10/1

Ta=25°C

PULSED

100

0.001 0.01 0.1

COLLECTOR CURRENT : IC (

Fig.1 DC current gain
vs. collector current

10

(A)

C :

1

Ta=100°C

25°C

−40°C

0.1

0.01

COLLECTOR CURRENT I

0.001
0 0.5

BASE TO EMITTER VOLTAGE : VBE (V

Fig.4 Grounded emitter propagation
characteristics

1000

11

A)

CE

=−2V

V

PULSED

)

Ta=25°C
I

E

=0mA

f=1MHz

BASE SATURATION VOLTAGE : V

0.001

0.001 0.01 0.1 1 10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs.collector current

1000

(MHz)

T :

100

TRANSITION FREQUENCY : f

10

0.001 0.01 0.1

EMITTER CURRENT : IE (

Fig.5 Gain bandwidth product
vs. emitter current

COLLECTOR SATURATION VOLTAGE : V

Ta=25°C
V

CE

=−2V

f=100MHz

SWITCHING TIME : (ns)

11

A)

0.001

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (

A)

Fig.3 Collector-emitter saturation voltag
vs. collector current

1000

100

tf

10

1

0.001 0.01 0.1
COLLECTOR CURRENT : I

tstg

tr

IC=20 IB1=-20IB2
Ta=25°C
f=100MHz

C

(A)

Fig.6 Switching time

tdon

cib

100

EMITTER INPUT CAPACITANCE:Cib (pF)

10

COLLECTOR OUTPUT CAPACITANCE:Cob(pF)

0.1 1

EMITTER TO BASE VOLTAGE : VEB (V

cob

1

)

Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 2/2