ROHM 2SB1690 Technical data
2SB1690
Transistors
General purpose amplification(−12V, −2A)
2SB1690
zApplications zExternal dimensions (Unit : mm)
Low frequency amplifier
Deiver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
: max. −180mV
at I
C
= −1A / IB= −50mA
zPackaging specifications
Type
2SB1690
Package
Code
Basic ordering
unit (pieces)
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=1ms
∗2 Each terminal mounted on a recommended land
∗3 Mounted on a 25mm×25mm×
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
t
0.8mm ceramic substrate
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Pulsed
∗
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
T
f
Cob
Min.
−15
−12
−6
−
−
−
270
−
−
−15
−12
−6
−2
−4
0.5
150
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
−100
−
−100
−120
−180
680
−
360
− V
15
−
TSMT3
2.9
0.4
(3)
(2)
(1)
0.950.95
(1) Base
(2) Emitter
(3) Collector
V
V
V
A
∗1
A
∗2
W
∗3
W1
°C
°C
1.9
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
V
C
=−10µA
I
V
I
C
=−1mA
V
I
E
=−10µA
nA
V
CB
=−15V
nA
V
EB
=−6V
mV
C
=−1A, IB=−50mA
−
MHz
pF
I
V
CE
=−2V, IC=−200mA
CE
=−2V, IE=200mA, f=100MHz
CB
=−10V, IE=0mA, f=1MHz
V
∗
∗
Rev.B 1/2
Transistors
0
e
e
1
0
1
0
zElectrical characteristic curves
1000
FE
DC CURRENT GAIN : h
Ta=100°C
25°C
−40°C
CE
=−2V
V
PULSED
V)
(V)
(
CE(sat)
BE(sat) :
0.01
2SB1690
10
1
−40°C
25°C
25°C
−40°C
Ta=100°C
0.1
Ta=100°C
C/IB
=20
I
PULSED
V)
(
CE(sat):
0.01
1
0.1
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
Ta=25°C
PULSED
100
0.001 0.01 0.1
COLLECTOR CURRENT : IC (
Fig.1 DC current gain
vs. collector current
10
(A)
C :
1
Ta=100°C
25°C
−40°C
0.1
0.01
COLLECTOR CURRENT I
0.001
0 0.5
BASE TO EMITTER VOLTAGE : VBE (V
Fig.4 Grounded emitter propagation
characteristics
1000
11
A)
CE
=−2V
V
PULSED
)
Ta=25°C
I
E
=0mA
f=1MHz
BASE SATURATION VOLTAGE : V
0.001
0.001 0.01 0.1 1 10
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs.collector current
1000
(MHz)
T :
100
TRANSITION FREQUENCY : f
10
0.001 0.01 0.1
EMITTER CURRENT : IE (
Fig.5 Gain bandwidth product
vs. emitter current
COLLECTOR SATURATION VOLTAGE : V
Ta=25°C
V
CE
=−2V
f=100MHz
SWITCHING TIME : (ns)
11
A)
0.001
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (
A)
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
100
tf
10
1
0.001 0.01 0.1
COLLECTOR CURRENT : I
tstg
tr
IC=20 IB1=-20IB2
Ta=25°C
f=100MHz
C
(A)
Fig.6 Switching time
tdon
cib
100
EMITTER INPUT CAPACITANCE:Cib (pF)
10
COLLECTOR OUTPUT CAPACITANCE:Cob(pF)
0.1 1
EMITTER TO BASE VOLTAGE : VEB (V
cob
1
)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B 2/2
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