ROHM 2SB1689 Technical data

2SB1689

Transistors

Genera purpose amplification(−12V, −1.5A)

2SB1689

zApplica tion

Low frequency amplifier
Driver

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE(sat) ≤ −200mV

at I

C = −500mA / IB = −25mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1

Single pulse, PW=1ms

∗

2

Each terminal mounted on a recommended land pattern

CBO

V
V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C

C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance

∗ Pulsed

Limits

−15

−12

−6

−1.5

−3

200
150

−55 to +150

BV
BV
BV

I
I

V

CE(sat)

CBO
EBO

h

f

CBO
CEO
EBO

FE
T

−15

−12

−6

270 − 680

Cob − 12 −

zExternal dimensions (Unit : mm)

0.3

0.15

0.1Min.

ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323

zPackaging specifications

Unit

V
V
V
A

∗1

A

∗2

mW

°C
°C

−−

−−

−−110

−

Type

2SB1689

−−

−−

−−

−100

−100

−200 mV

400

−

V
V

V
nA VCB= −15V
nA VEB= −6V

− V

MHz

pF

)

1

(

0.65

)

2

2.0

)

3

(

1.25

2.1

0~0.1

Each terminal has same dimensions

Abbreviated symbol : EV

Package
Code
Basic ordering unit (pieces)

I

C

= −10µA

I

C

= −1mA

I

E

= −10µA

1.3

(

0.65

0.2

0.9

0.7

(1) Emitter
(2) Base
(3) Collector

IC= −500mA, IB= −25mA

CE

= −2V, IC= −200mA

∗

VCE= −2V, IE=200mA, f=100MHz
V

CB

= −10V, IE=0A, f=1MHz

Taping

T106
3000

∗

1/2

2SB1689

Transistors

zElectrical characteristic curves

1000

FE

100

DC CURRENT GAIN : h

10

0.001 0.01 0.1

COLLECTOR CURRENT : IC (

Fig.1 DC current gain vs.

10

(A)

C

1

Ta=100°C

25°C

−40°C

0.1

Ta=100°C

25°C

−40°C

collector current

CE

=−2V

V

PULSED

110

A)

CE

=−2V

V

PULSED

V)

1

(

CE(sat)

0.1

0.01

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

Ta=−40˚C

25˚C

100˚C

Ta=100˚C

25˚C

−40˚C

COLLECTOR CURRENT : IC (

Fig.2 Collector-emitter saturation voltage

vs.collector current
Fig.3 Base-emitter saturation voltage
vs.collector current

1000

(MHz)

T

100

C/IB

=20

I

PULSED

A)

Ta=25°C

CE

V
f=100MHz

=−2V

V)

1

(

CE(sat)

0.1
IC/IB=50

20
10

0.01

0.001

COLLECTOR SATURATION VOLTAGE : V

0.001 0.01 0.1 1 10

COLLECTOR CURRENT : IC (

Fig.4 Collector-emitter saturation

voltage vs. collector current

100

Cib

Cob

10

Ta=25°C

PULSED

A)

Ta=25°C
I

E

=0mA

f=1MHz

0.01

COLLECTOR CURRENT : I

0.001
0 0.5 1

BASE TO EMITTER VOLTAGE : VBE (V

Fig.5 Grounded emitter propagation

characteristics

TRANSITION FREQUENCY : f

1.5

10

0.001 0.01 0.1

)

Fig.6 Gain bandwidth product

EMITTER CURRENT : IE (

vs. emitter current

110

A)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1

0.1 1

COLLECTOR TO BASE VOLTAGE : VCB (V

10 100

Fig.7 Collector output capacitance

vs. collector-base voltage
Emitter input capacitance
vs.emitter-base voltage

)

2/2