ROHM 2SB1590K Technical data
Transistors
Power T ransistor (-15V, -1A)
2SB1590K
zFeatures
1) Low saturation voltage, V
at I
/ IB = -0.4A / -20mA.
C
2) I
= -1A
C
CE(sat
= -
0.3V (Max.)
)
3) Complements the 2SD2444K.
zPackaging specification and h
Type
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
∗
FE
2SB1590K
SMT3
Q
BK∗
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
CP
I
P
C
Tj
Tstg
zElectrical characteristics (Ta=25°C)
−15 V
−15
−6
−1
0.2
150
−55 to +150
zExternal dimensions (Unit : mm)
SMT3
(3)
(2)
0.95 0.95
(1)Emitter
(2)Base
(3)Collector
V
V
A (DC)
A (pw=10ms)−2
W
°C
°C
2.9
0.4
1.9
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
2SB1590K
0.3Min.
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
FE1
h
h
FE2
f
T
Cob
Min.
Typ. Max. Unit Conditions
−15
−15
−6
−
−
−
120
80
−
−
−
−
−
−
−
−
−
−
200
15
−
−
−
−0.5
−0.5
−0.3
270
−
−
−
V
V
V
µA
µA
V
−
MHz
pF
C
=−50µA
I
C
=−1mA
I
I
E
=−50µA
CB
V
EB
V
I
C
=−0.4A, IB=−20mA
CE
V
CE
V
V
CE
V
CB
=−12V
=−5V
/
IC=−2V/−0.5A−
=−2V, IC=−800mA
=−2V, IE=50mA, f=100MHz
=−10V, IE=0A, f=1MHz
Rev.A 1/2
Transistors
zElectrical characteristic curves
(%)
C Max.
100
P
/
C
75
50
25
POWER DISSIPATION : P
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta
Fig.1 Grounded emitter output
characteristics
1k
500
FE
200
100
50
DC CURRENT GAIN : h
20
10
−1m −2m −5m −10m −20m −50m−100m −200m−500m −1
COLLECTOR CURRENT : l
V
CE
=−
−
−
Fig.4 DC current gain vs.
collector current ( )
(°C)
Ta=25
5V
2V
1V
C
(A)
2SB1590K
1
−
−500m
(A)
C
Ta=100
−200m
−100m
−50m
−20m
−10m
−5m
COLLECTOR CURRENT : I
−2m
−1m
°C
25
°C
−
40
°C
0 −0.5 −1.0 −1.5
BASE TO EMITTER VOLTAGE : V
Ta=25°C
CE
=−2V
V
BE
(V)
Fig.2 Grounded emitter propagation
characteristics
1k
°C
500
FE
200
100
50
DC CURRENT GAIN : h
20
10
−1m −2m −5m −10m −20m −50m−100m−200m −500m −1
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : l
Fig.5 DC collector gain vs.
collector current ( )
V
CE
=−
2V
C
(A)
1.0
Ta=25°C
0.9
−10mA
(A)
C
−9mA
0.8
−8mA
−7mA
0.7
0.6
0.5
0.4
0.3
0.2
COLLECTOR CURRENT : I
0.1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
characteristics
1V
500
(mV)
CE (sat)
200
100
50
20
10
5
2
1
−1m −2m −5m −10m −20m −50m−100m−200m −500m −1
COLLECTOR SATURATION VOLTAGE : V
lC/lB=50
20
10
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
−6mA
−5mA
−4mA
−3mA
−2mA
IB=−1mA
CE
Ta=25
C
(A)
(V)
°C
−1V
(mV)
−500
CE (sat)
−200
−100
−50
−20
−10
−5
−2
−1
1m 2m 5m 10m 20m 50m 100m 200m 500m 1
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
lC/lB=20
C
(A)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1000
500
(MHz)
T
200
100
FREQUENCY : f
50
20
TRANSITION
10
10m 20m 50m 100m 200m 500m 1
EMITTER CURRENT : l
Fig.8 Transition frequency vs.
emitter current
E
(A)
Ta=25
V
CE
°C
= −
2V
1000
(pF)
500
ob
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : C
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : V
Fig.9 Collector output capacitance vs.
collector-base voltage
Ta=25
f=1MHz
l
E
=0A
CB
°C
(V)
Rev.A 2/2
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