ROHM 2SB1580, 2SB1567, 2SB1316 Datasheet
2SB1580 / 2SB1316 / 2SB1567
Transistors
Power Transistor (−100V , −2A)
2SB1580 / 2SB1316 / 2SB1567
Features
!
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980 / 2SD2398.
Absolute maximum ratings
!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
∗
1 Single pulse Pw=100ms
∗
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and h
!
∗
Denotes h
Circuit schematic
!
2SB1580
2SB1316
2SB1567
Type 2SB1580
Package
FE
h
Marking
Code
Basic ordering unit (pieces)
FE
B
C
(Ta = 25°C)
Limits
C
−100
−100
−8
−2
−3
2
1
10
2W
20
150
−55∼+150
FE
2SB1316
1k ∼ 10k
CPT3
TL
2500
2SB1567
TO-220FN
1k ∼ 10k
−
500
V
CBO
V
CEO
V
EBO
I
C
P
Tj
Tstg
MPT3
1k ∼ 10k
BN∗− −
T100
1000
Unit
V
V
V
A(DC)
W
W(Tc=25°C)
W(Tc=25°C)
°C
°C
External dimensions
!
2SB1580
ROHM : MPT3
EIAJ : SC-62
∗1A(Pulse)
∗2
2SB1316
ROHM : CPT3
EIAJ : SC-63
2SB1567
)
1
(
)
2
(
)
3
(
1.0
0.5
15.0
12.0
14.0
3.0
0.8Min.
2.3
2.3
2.54
1.0
0.4
1.5
1.5
0.4
0.4
0.9
0.65
2.5
10.0
8.0
1.2
5.0
(1)
(1)
(Units : mm)
4.0
2.5
(1)
(2)
0.5
(3)
1.5
5.5
0.75
0.9
1.5
0.5
9.5
3.2
φ
1.3
0.8
0.75
2.54
(2)
(3)
(2)
(3)
0.5
1.6
4.5
(1) Base(Gate)
1.5
(2) Collector(Drain)
(3) Emitter(Source)
6.5
5.1
C0.5
(1) Base(Gate)
2.3
(2) Collector(Drain)
(3) Emitter(Source)
4.5
2.8
2.6
(1) Base(Gate
(2) Collector(Drain
(3) Emitter(Source
)
)
)
ROHM : TO-220FN
R1R
2
R
R
Electrical characteristics
!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Output capacitance
∗
Measured using pulse current.
E
1
3.5kΩ
B
: Base
C
: Collector
2
300Ω
E
: Emitter
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
(Ta = 25°C)
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
−
−
−10
−1.5
−
−3
−
V
V
µA
mA
VIC/IB = −1A/−1mA
pF
−100
−100
−
−
−
−
−
−−
1000 − 10000 −*V
−
35
C
= −50µA
I
C
= −5mA
I
CB
= −100V
V
V
EB
= −7V
CE
= −2V , IC = −1A
CB
= −10V , IE = 0A , f = 1MHz
V
*
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