ROHM 2SB1561 Schematic [ru]

2SB1561

Transistors

Medium Power Transistor (−60V, −2A)

2SB1561

zFeatures

1) Low saturation voltage , typically
V

CE (sat) = −0.15V at IC / IB = −1A / −50mA.

2) Collector-emitter voltage = −60V

3) Pc = 2W (on 40×40×0.7mm ceramic board).

4) Complements the 2SD2391.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.

+

+

CBO

V
VCEO
VEBO

IC

ICP
PC

Tj

Tstg

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

DC current transfer ratio
Transition frequency

Output capacitance

∗ Measured using pulse current

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO
EBO

h
h

f

CBO
CEO
EBO

FE1
FE2
T

Limits

−60

−60

−6

−2

−6

0.5
2

150

−55 to +150

−60

−60

−6

−

−

−

120

45

−

−

zExternal dimensions (Unit : mm)

MPT3

4.5

1.6

(3)(2)(1)

0.5

1.51.5

(1)Base
(2)Collector
(3)Emitter

3.0

Unit

V
V
V
A

∗

1

A

W

∗

2

°C
°C

I

−

−

−

−

−

−0.15

−

−

200

23

−

−

−

−0.1

−0.1

−0.35

270

−

−

−

V
V
V

µA
µA

V

−

−

MHz

pF

C

=−50µA

I

C

=−1mA

I

E

=−50µA

V

CB

=−50V

EB

=−5V

V
I

C/IB

=−1A/−50mA

CE/IC

V

CE/IC

V

CE

=−2V, IE=0.5A, f=100MHz

V
V

CB

=−10V, IE=0A, f=1MHz

0.5

2.5

4.0

1.0

0.40.4

=−2V/−0.5A
=−2V/−1.5A

1.5

0.4

∗

∗

Rev.A 1/3

Transistors

zPackaging specifications and h

Type 2SB1561

−

12mA

10mA

−

−

8mA

−

6mA

−4mA

I

B

MPT3

Q

BL
T100
1000

=−

2mA

Ta=

VCE= −5V

∗

25

−2V

−1V

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

Denotes h

∗

FE

z Electrical characteristic curves

−2.0

(A)

C

−1.6

−1.2

CURRENT : l

−0.8

−0.4

20mA

−

−18mA

−14mA

−16mA

COLLECTOR

0.0
0 −4 −5−2 −3−1

COLLECTOR TO EMITTER VOLTAGE

Fig.1 Grounded emitter output

characteristics

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

−5m −10m−100m −100m

COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain
vs. collector current ( ΙΙ )

FE

−5

−2

−1

(A)

C

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−5m

COLLECTOR CURRENT : I

−2m

−1m

: VCE (V)

−1000

C

°

(mV)

−500

CE(sat)

−200

−100

−50

−20

−10

−5

−2

−5−1

−1

−5m −10m−100m −100m

COLLECTOR SATURATION VOLTAGE : V

Fig.5 Collector-emitter saturation

voltage vs. collector current ( Ι )

−0.4 −0.8 −1.2 −1.60

BASE TO EMITTER VOLTAGE : V

Fig.2 Grounded emitter propagation

characteristics

Ta=100°C

25°C

−40°C

COLLECTOR CURRENT : IC (A)

2SB1561

V

CE

=

−

2V

°C

C

°

100

25°C

=

−40

Ta

BE

(V)

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

−5m −10m−100m −100m

=100

Ta

25

°C

°C

40

−

COLLECTOR CURRENT : IC (A)

C

°

Fig.3 DC current gain vs.

collector current ( Ι )

−1000

20

=

B

/I

C

I

(mV)

−500

CE(sat)

−200

−100

−50

−20

−10

−5

−2

−5−1

−1

−5m −10m−100m −100m

COLLECTOR SATURATION VOLTAGE : V

=50

B

/I

C

I

20
10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( ΙΙ )

VCE=2V

Ta=25°C

−5−1

−5−1

Rev.A 2/3