ROHM 2SB1561 Schematic [ru]
2SB1561
Transistors
Medium Power Transistor (−60V, −2A)
2SB1561
zFeatures
1) Low saturation voltage , typically
V
CE (sat) = −0.15V at IC / IB = −1A / −50mA.
2) Collector-emitter voltage = −60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SD2391.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+
CBO
V
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
h
f
CBO
CEO
EBO
FE1
FE2
T
Limits
−60
−60
−6
−2
−6
0.5
2
150
−55 to +150
−60
−60
−6
−
−
−
120
45
−
−
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
(3)(2)(1)
0.5
1.51.5
(1)Base
(2)Collector
(3)Emitter
3.0
Unit
V
V
V
A
∗
1
A
W
∗
2
°C
°C
I
−
−
−
−
−
−0.15
−
−
200
23
−
−
−
−0.1
−0.1
−0.35
270
−
−
−
V
V
V
µA
µA
V
−
−
MHz
pF
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−50V
EB
=−5V
V
I
C/IB
=−1A/−50mA
CE/IC
V
CE/IC
V
CE
=−2V, IE=0.5A, f=100MHz
V
V
CB
=−10V, IE=0A, f=1MHz
0.5
2.5
4.0
1.0
0.40.4
=−2V/−0.5A
=−2V/−1.5A
1.5
0.4
∗
∗
Rev.A 1/3
Transistors
zPackaging specifications and h
Type 2SB1561
−
12mA
10mA
−
−
8mA
−
6mA
−4mA
I
B
MPT3
Q
BL
T100
1000
=−
2mA
Ta=
VCE= −5V
∗
25
−2V
−1V
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
z Electrical characteristic curves
−2.0
(A)
C
−1.6
−1.2
CURRENT : l
−0.8
−0.4
20mA
−
−18mA
−14mA
−16mA
COLLECTOR
0.0
0 −4 −5−2 −3−1
COLLECTOR TO EMITTER VOLTAGE
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−5m −10m−100m −100m
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
FE
−5
−2
−1
(A)
C
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−5m
COLLECTOR CURRENT : I
−2m
−1m
: VCE (V)
−1000
C
°
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m −100m
COLLECTOR SATURATION VOLTAGE : V
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
−0.4 −0.8 −1.2 −1.60
BASE TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter propagation
characteristics
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : IC (A)
2SB1561
V
CE
=
−
2V
°C
C
°
100
25°C
=
−40
Ta
BE
(V)
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−5m −10m−100m −100m
=100
Ta
25
°C
°C
40
−
COLLECTOR CURRENT : IC (A)
C
°
Fig.3 DC current gain vs.
collector current ( Ι )
−1000
20
=
B
/I
C
I
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−5−1
−1
−5m −10m−100m −100m
COLLECTOR SATURATION VOLTAGE : V
=50
B
/I
C
I
20
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
VCE=2V
Ta=25°C
−5−1
−5−1
Rev.A 2/3
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