ROHM 2SB1474 Datasheet

Transistor

Power Transistor (−80V, −4A)

2SB1474

2SB1474

Features

!

1) Darlington connection for a high h

FE

.

2) Built-in resistor between base and emitter.

3) Built-in damper doide.

Absolute maximum ratings

!!!!

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

Single pulse, Pw=100ms

*

Packaging specifications and h

!!!!

Type 2SB1474

Package

h

FE

Code

Basic ordering unit (pieces)

V
V
V

Tstg

CPT3

1k~10k

TL

2500

CBO
CES
EBO

I

C

P

C

Tj

(Ta=25°C)

Limits

-80

-80

150

-55~+150

FE

-7

-4

-6
1

10

Unit

A(DC)

W

(Tc=25˚C)

˚C
˚C

External dimensions

!!!!

ROHM : CPT3

V
V
V

A

*

W

EIAJ : SC-63

1.0

)
1

(
)

2.3

2

(
)

3

(

2.3

0.8Min.

0.5

(Units : mm)

5.5

0.75

0.9

0.9

0.65

1.5

2.5

9.5

1.5

6.5

5.1

C0.5

2.3

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

0.5

Circuit diagram

!!!!

C

B

R1R

2

R

1

2

R

Electrical characteristics

!!!!

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

1 Measured using pulse current. *2 Transition frequency of the device.

*

E

3kΩ

B

: Base

C

: Collector

300Ω

E

: Emitter

(Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV
BV

V

I

CBO

I

EBO

CE(sat)

h

f

Cob

CBO
CEO

FE
T

-80

-80

1000

-

-

-

-100

-

-

-

-

-

-

5000

12
45

-3

-

-1.5

-1
10000

-

-

µA

mA

MHz

pF

C

=-

50µA

I

V

I

C

=-

1mA

V

CB

=-

80V

V

EB

=-

V

-

5V

I

C/IB

=-

2A/-4mA

V

CE/IC

=-

3V/-2A

V

CE

=-

5V, I

E

=

CB

=-

10V, I

0.5A, f=10MHz

E

=

0A, f=1MHz

V

1

*

1

*

2

*

V

-