ROHM 2SB1474 Datasheet
Transistor
Power Transistor (−80V, −4A)
2SB1474
2SB1474
Features
!
1) Darlington connection for a high h
FE
.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
Absolute maximum ratings
!!!!
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, Pw=100ms
*
Packaging specifications and h
!!!!
Type 2SB1474
Package
h
FE
Code
Basic ordering unit (pieces)
V
V
V
Tstg
CPT3
1k~10k
TL
2500
CBO
CES
EBO
I
C
P
C
Tj
(Ta=25°C)
Limits
-80
-80
150
-55~+150
FE
-7
-4
-6
1
10
Unit
A(DC)
W
(Tc=25˚C)
˚C
˚C
External dimensions
!!!!
ROHM : CPT3
V
V
V
A
*
W
EIAJ : SC-63
1.0
)
1
(
)
2.3
2
(
)
3
(
2.3
0.8Min.
0.5
(Units : mm)
5.5
0.75
0.9
0.9
0.65
1.5
2.5
9.5
1.5
6.5
5.1
C0.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0.5
Circuit diagram
!!!!
C
B
R1R
2
R
1
2
R
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current. *2 Transition frequency of the device.
*
E
3kΩ
B
: Base
C
: Collector
300Ω
E
: Emitter
(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
f
Cob
CBO
CEO
FE
T
-80
-80
1000
-
-
-
-100
-
-
-
-
-
-
5000
12
45
-3
-
-1.5
-1
10000
-
-
µA
mA
MHz
pF
C
=-
50µA
I
V
I
C
=-
1mA
V
CB
=-
80V
V
EB
=-
V
-
5V
I
C/IB
=-
2A/-4mA
V
CE/IC
=-
3V/-2A
V
CE
=-
5V, I
E
=
CB
=-
10V, I
0.5A, f=10MHz
E
=
0A, f=1MHz
V
1
*
1
*
2
*
V
-
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