ROHM 2SB1443 Service Manual

Transistors

Power Transistor (−50V, −2A)

2SB1443

zFeatures

1) Low saturation voltage. V

2) Excellent DC current gain characteristics.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Collector power dissipation

Junction temperature
Storage temperature

∗1 Single pulse, Pw=10ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm or larger.

zPackaging specifications and h

Type

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

∗Denotes h

FE

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

DC current transfer ratio
Transition frequency
Output capacitance

∗ Measured using pulse current

CE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA.

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

FE

Limits

−50

−50

−6

C

C

−2

−5

1

150

−55~+150

2

Unit

V
V
V

A (DC)

A (Pulse)

W

°C
°C

∗

∗

2SB1443

ATV

Q

−

TV2

2500

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO
EBO

h

f

CBO
CEO
EBO

FE

T

−50

−50

−6

120

−

−

−

−

−

−

−

−

−

−

−0.15

−

200

36

−

−

−

−0.1

−0.1

−0.35

270

−

−

1
2

V
V
V

µA
µA

V

−

MHz

pF

C

=−50µA

I

C

=−1mA

I
I

E

=−50µA

V

CB

=−50V

EB

=−5V

V
I

C/IB

=−1A/−50mA

V

CE/IC

=−2V/−0.5A

V

CE

=−2V, IE=0.5A, f=100MHz

CB

=−10V, IE=0A, f=1MHz

V

2SB1443

∗

∗

Rev.A

1/2

Transistors

z電気的特性曲線

2.0

Ta=25°C

1.8

(A)

C

1.6

1.4

1.2
1

CURRENT : l

800m
600m
400m

COLLECTOR

200m

0

010

COLLECTOR TO EMITTER VOLTAGE

Fig.1 Grounded emitter output

characteristics

(V)

CE (sat)

COLLECTOR SATURATION VOLTAGE : V

=10mA

B

l

9mA

8mA

7mA

6mA

5mA

4mA

3mA
2mA

1mA

678945231

: VCE (V)

-

1

-

0.5

-

0.2

C

°

100

=

-

0.1

-

0.05

-

0.02

-

0.01

-1m-5m-

-2m-

COLLECTOR CURRENT : IC (A)

Ta

Ta=25

°

C

C

°

40

Ta=−

0.02-0.1-0.5-2-5-10

0.01-0.05-0.2-1

Fig.4 Collector-emitter saturation

voltage vs. collector current

−10

−5

A)

m

−2

(

C

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−5m

COLLECTOR CURRENT : I

−2m

−1m

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.40

BASE TO EMITTER VOLTAGE : V

Ta=100°C

C

°

25

Ta=

VCE=2V

=−40°C

Ta

Fig.2 Grounded emitter propagation

characteristics

lC/lB=20

(A)

C

100m

10m

COLLECTOR CURRENT : l

2SB1443

5000

2000

FE

1000

500

200
100

50

DC CURRENT GAIN : h

20
10

5

-1m-5m-

BE

(V)

-2m-

COLLECTOR CURRENT : IC (A)

Fig.3 DC current gain vs.

10

I

C Max (PULSE)

1

Ta=25°C
Single
nonrepetitive
pulse

1m

0.01 0.1 1 10 100

P

DC

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.5 Safe operating area

C

°

Ta=100

Ta=

25

°

C

C

°

Ta=−40

0.02-0.1-0.5-2-5-10

0.01-0.05-0.2-1

collector current

10ms

W

=100ms

VCE=2V

Rev.A

2/2