ROHM 2SB1427 Technical data

Transistors

Power transistor (−20V, −2A)

2SB1427

zFeatures

1) Low saturation voltage,
V

CE : Max . −0.5V at IC/IB = −1A / −50mA.

2) Excellent DC current gain characteristics.

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.

Parameter Symbol

V
V
V

P

Tstg

CBO
CEO
EBO

I

Tj

C

C

zPackaging specifications and h

Type 2SB1427

Package

FE

h

Marking

Basic ordering unit (pieces)

∗

Denotes h

Code

FE

MPT3

E

BJ
T100
1000

FE

∗

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

∗

Measured using pulse current.

Parameter Symbol Min. Typ. Max. Unit Conditions

V

BV
BV
BV

I

CBO

I

EBO

CE(sat)

h

f

Cob

CBO
CEO
EBO

FE

T

Limits

−20

−20

−6

−2

−3

0.5
2

150

−55 ~ +150 °C

−20

−20

390

−

−

−

−6

−

−

−

−

−−−0.5 V I

−

−

90

−

30

zExternal dimensions (Unit : mm)

ROHM : MPT3

EIAJ : SC-62

Unit

V
V
V

A(DC)

A(Pulse)

∗1

∗2

W
°C

I

V

−

−

−

−0.5

−0.5

820

−

−

V
V

µA
µA

−

MHz

pF

C

= −50µA

I

C

= −1mA

I

E

= −50µA

V

CB

= −16V

V

EB

= −5V

C/IB

= −1A/−50mA

V

CE/IC

= −6V/−0.5A

V

CE

= −10V , IE = 10mA , f= 100MHz

V

CB

= −10V , IE = 0A , f = 1MHz

2SB1427

4.0

1.0

2.5

0.5

(1)

0.4

1.5

(2)

1.6

3.0

0.5

(3)

1.5

0.4

0.4

4.5

(1) Base

1.5

(2) Collector
(3) Emitter

∗

Rev.A 1/2

Transistors

zElectrical characteristics curves

−5A

−2A

(mA)

C

−1A

−500

−200

−100

−50

−20

−10

−5

COLLECTOR CURRENT : I

−2

−1

−0 −0.5 −1.0 −1.5

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation
characteristics

Ta=25°C
V

CE

= −2V

BE

(V)

10

5

Ic Max. (Pulse∗)

2

(A)

C

1

500m
200m

DC

100m

50m
20m

10m

Ta=25°C

5m

COLLECTOR CURRENT : I

∗ Single

2m

NONREPETITIVE
PULS

1m

0.2 0.5 1 2 5 10 20 50 100 200 500 1000

0.1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.4 Safe Operating area

Pw=10ms

Pw=100ms

∗

∗

5k

2k

FE

1k

500

200
100

DC CURRENT GAIN : h

50

20

−1m −10m −100m −1 −10

Ta=100°C

25°C

−50°C

COLLECTOR CURRENT : I

VCE= −6V

C

(A)

Fig.2 DC current gain vs. collector current

(V)

−1

CE(sat)

−500m

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−1m −10m −100m −1 −10

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

Fig.3 Collector-emitter saturation
voltage vs. collector current

2SB1427

Ta=25°C

C/IB

=20

I

C

(A)

Rev.A 2/2