ROHM 2SB1197K Technical data

2SB1197K

z

z

z

z

z

Transistors

Low Frequency Transistor (32V, 0.8A)

2SB1197K

Features

1) Low V

CE(sat).

CE(sat)  0.5V

V
I

C / IB= 0.5A / 50mA

2) IC = 0.8A.

3) Complements the 2SD1781K.

Structure

Epitaxial planar type
PNP silicon transistor

External dimensions (Unit : mm)

±

0.2

2.9

1.9

±

0.2

0.95

0.95
(2)

(1)

(3)

All terminals have the
same dimensions

+

0.1

0.4

−0.05

ROHM : SMT3
EIAJ : SC-59

Denotes h

∗

FE

Abbreviated symbol: AH

+

0.2

1.1

−0.1

0.8

±

0.1

0.15

+

0.1

−0.06

0~0.1

0.6

∼

0.3

0.2

0.2

±

−0.1

+

2.8

1.6

∗

(1) Emitter
(2) Base
(3) Collector

z

Absolute maximum ratings (Ta=25qC)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Symbol Limits Unit

V
V

V
Collector current
Collector power dissipation
Junction temperature
Storage temperature

z

Electrical characteristics (T a=25qC)

Tstg

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

CBO

CEO

EBO

I

P

Tj

C

C

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO

EBO

h

f

CBO

CEO

EBO

FE

T

−40 V

−

−

−

−0.5

−0.5

−0.5

390

−−

30

V
V
A

W

°C
°C

VI
V
V

μ

A

μ

A

V

−

MHz

pF

C

= −50μA

I

C

= −1mA

I

E

= −50μA

V

CB

V

EB

C/IB

I

CE

V

CE

V
V

CB

−32

−5

−0.8

0.2

150

−55 to 150

Min.

Typ. Max. Unit Conditions

−40

−32

−5

120

−

−

−

−

−

−

−

−

−

−

200

−

12

= −20V
= −4V

= −0.5A/ −50mA
= −3V, IC= −100mA
= −5V, IE=50mA, f=100MHz
= −10V, IE=0A, f=1MHz

Rev.A 1/2

Transistors

z

z

Packaging specifications and h

Package
Code

Type

2SB1197K

hFE values are classified as follows :

Item Q R

h

h

FE

QR

FE

120 to 270 180 to 390

Basic ordering unit (pieces)

2SB1197K

z

FE

Taping

T146
3000

Electrical characteristic curves

−1000

−500

−200

(mA)

−100

−50

−20

−10

−5

−2

−1

−0.5

COLLECTOR CURRENT : IC

−0.2

−0.1

0 −0.4 −0.8 −1.2 −1.6

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation

characteristics

Ta=25°C

VCE=6V

BE

(V)

−200

Ta=25°C

−180

(mA)

−160

C

−140

−120

−100

−80

−60

−40

COLLECTOR CURRENT : I

−20
0

COLLECTOR TO EMITTER VOLTAGE : V

−1.0mA

0.9mA

−

0.8mA

−

0.7mA

−

0.6mA

−

0.5mA

−

0.4mA

−

0.3mA

−

−0.2mA

−0.1mA

I

B

−40 −8 −12 −16 −20

=

Fig.2 Grounded emitter output

characteristics ( )

−1000

(mV)

−500

CE (sat)

−200

−100

IC/IB

=50

−50

−20

−10

−5

−2

−1

COLLECTOR SATURATION VOLTAGE : V

20
10

−1m

−10m −100m −1

COLLECTOR CURRENT : IC

Fig.5 Collector-emitter saturation

voltage vs. collector current

0mA

Ta=25°C

(A)

−500

−14mA

−16mA

−18mA

(mA)

−20mA

−400

C

−300

−200

−100

COLLECTOR CURRENT : I

0

CE

(V)

COLLECTOR TO EMITTER VOLTAGE : V

Fig.3 Grounded emitter output

1000

500

(MHz)

T

200
100

50

20
10

5

2

TRANSITION FREQUENCY : f

1

1m 10m 100m 1

Fig.6 Gain bandwidth product vs.

12mA

10mA

−

−

8mA

−

6mA

−

4mA

−

2mA

−

=

B

I

−0.20 −0.4 −0.6 −0.8 −1.0

Ta=25°C

characteristics ( )

Ta=25°C

VCE= −5V

EMITTER CURRENT : I

E

(A)

emitter current

1k

500

FE

200
100

DC CURRENT GAIN : h

CE

(V)

50

20
10

5

2
1

−1m −10m −100m −1
COLLECTOR CURRENT : I

VCE= −3V

−2V

−1V

Fig.4 DC current gain vs.

collector current

1000

(pF)

(pF)

500

200
100

50

20
10

5

2
1

COLLECTOR OUTPUT CAPACITANCE : Cob

EMITTER INPUT CAPACITANCE : Cib

−0.1 −1 −10 −100

COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V

C

ib

C

ob

Fig.7 Collector output capacitance vs.

collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

Ta=25°C

C

(A)

Ta=25°C

=

1MHz

f

I

E

=

0A

CB
EB

(V)
(V)

Rev.A 2/2