ROHM 2SAR554P User Manual

A

Midium Power Transistors (-80V / -1.5A)

2SAR554P

Structure



PNP Silicon epitaxial planar transistor

Features



1) Low saturation voltage, typically
V

= -0.4V (Max.) (IC / IB= -500mA / -25mA)

CE (sat)

2) High speed switching

Applications



Driver

Packaging specifications



Package Taping

Type

Code T100
Basic ordering unit (pieces) 1000

2SAR554P



Dimensions



Inner circuit



(Unit : mm)

(1) (2) (3)

bbreviated symbol : MH

(Unit : mm)

Absolute maximum ratings



Parameter

(Ta = 25C)

Symbol Limits Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage

Collector current

DC I

Pulsed I

V

Power dissipation

Junction temperature T

Range of storage temperature T

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

CBO

CEO

EBO

CP

P

P

C

D

D

j

stg

-80 V

-80 V

-1.5 A

*1

*2

0.5 W

*3

150 C

-55 to 150 C

(1) Base
(2) Collector
(3) Emitter

-6 V

-3 A

2W

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2009.12 - Rev.A

_

Electrical characteristic (Ta = 25C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter staturation voltage

DC current gain

Transition frequency

Turn-on time

Storage time

Fall time

*1 See switching time test circuit

Symbol Min. Typ. Max. Unit

BV

BV

BV

I

I

V

CE(sat)

h

C

CEO

CBO

EBO

CBO

EBO

FE

f

T

ob

t

on

t

stg

t

-80 - - V

-80 - - V

-6 - - V

---1

---1

- -200 -400 mV

120 - 390 -

-

-15Collector output capacitance

-50-ns

1

*

- 300 - ns

1

*

1

*

f

-50-ns

A

A

MHz340 -

-

pF

ConditionsParameter

= -1mA

I

C

= -100μA

I

C

= -100μA

I

E

= -80V

V

CB

V

= -4V

EB

= -500mA, IB= -25mA

I

C

= -3V, IC= -100mA

V

CE

= -10V

V

CE

I

=200mA, f=100MHz

E

= -10V, IE=0A

V

CB

f=1MHz

I

= -0.7A,IB1= -70mA,

C

I

=70mA,V

B2

CC

-10V

~

Data Sheet 2SAR554P

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

Electrical characteristic curves

-0.50

-0.45

[A]

-0.40

C

I

: TNERRUC ROTCELLOC

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.0 -0.5 -1.0 -1.5 -2.0

COLECTOR TO EMITTER VOLTAGE : VCE[V]

-3.0mA

-5.0mA

-2.5mA

-2.0mA

-1.5mA

-1.0mA

-0.5mA

Fig.1 Typical Output Characteristics

1000

Ta=25°C

EFh

:

N
IAG

TNERR

100

U
C C

D

10

-1 -10000-1000-100-10 -1 -10000-1000-100-10

COLLECTOR CURRENT : IC[mA]

Fig.2 DC Current Gain vs.
Collector Current ( Ι )

V

CE

= -5V

-3V

1000

V

CE =

-3V

EFh :

NIAG TNERRUC

Ta=125°C

100

C
D

10

COLLECTOR CURRENT : I

75°C
25°C

-40°C

Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )

Data Sheet 2SAR554P

C

[mA]

-1

)[V]tas(

CE

: EGATLOV NOITARUTAS ROTCELLOCV

)Fp(bo

C :
E

CNATIC

AP
AC

TUP

TU
O

R
O
T
C
E

L
L

OC

Ta=25°C

-0.1

-0.01

-1 -10000-1000-100-10

COLLECTOR CURRENT : IC[mA]

Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )

1000

)Fp(biC : ECN

100

ATICAP

A
C TUPNI RE

10

T
TIME

1

-0.1 -1 -10 -100 -0.1 -1 -10 -100

COLLECTOR - BASE VOLTAGE : VCB [V]

EMITTER - BASE VOLTAGE : V

Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage

Cib

Cob

IC/IB=50

Ta=25°C
f=1MHz
I

E

=0A

I

C

=0A

EB

20
10

[V]

]V[)tas(

V : EGATLOV NOITARUTAS ROTCELLOC

[MHz]

T

f

:
YC

N
EUQER

F

NOITI

SN
ART

-1
IC/IB=20

EC

-0.1

Ta=125°C

75°C
25°C

-40°C

-0.01

-1 -10000-1000-100-10

C

COLLECTOR CURRENT : I

Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )

1000

Ta=25°C

V

CE =

-10V

100

10

10 100 1000

EMITTER CURRENT : IE[mA]

Fig.8 Gain Bandwidth Product vs.
Emitter Current

[mA]

-10000
V

CE =

-3V

]Am

[

-1000

C

I : T

N
E
R
RUC RO

-100

T
C
E

-10

LLO

C

-1

0 -0.5 -1 -1.5

BASE TO EMITTER VOLTAGE : V

Fig.6 Ground Emitter Propagation
Characteristics

-10
Single pulse

]
A

[

C

I

-1

:

T
N

ER
RU

-0.1

C
R

OTC

DC Ta=25°C
(Mounted on a

ELL

-0.01
recommended land)

O

DC Ta=25°C

C

(Mounted on a ceramic board)

-0.001

COLLECTOR TO EMITTER VOLTAGE : V

Fig.9 Safe Operating Area

Ta=125°C

75°C
25°C

-40°C

BE

1ms

10ms

100ms

[V]

CE

[V]

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

_~_

Switching time test circuit

V

IN

Pw

Pw 50μs

DUTY CYCLE1%

Data Sheet 2SAR554P

RL=15Ω

I

B1

I

C

~

VCC -10V

I

B2

BASE CURENT WAVEFORM

COLLECTOR CURRENT WAVEFORM

90%

10%

I

B2

I

B1

t

on

t

stg

t

f

I

C

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

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information, ROHM shall bear no responsibility for such damage.

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