ROHM 2SAR554P User Manual
A
Midium Power Transistors (-80V / -1.5A)
2SAR554P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
= -0.4V (Max.) (IC / IB= -500mA / -25mA)
CE (sat)
2) High speed switching
Applications
Driver
Packaging specifications
Package Taping
Type
Code T100
Basic ordering unit (pieces) 1000
2SAR554P
Dimensions
Inner circuit
(Unit : mm)
(1) (2) (3)
bbreviated symbol : MH
(Unit : mm)
Absolute maximum ratings
Parameter
(Ta = 25C)
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-80 V
-80 V
-1.5 A
*1
*2
0.5 W
*3
150 C
-55 to 150 C
(1) Base
(2) Collector
(3) Emitter
-6 V
-3 A
2W
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
_
Electrical characteristic (Ta = 25C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
h
C
CEO
CBO
EBO
CBO
EBO
FE
f
T
ob
t
on
t
stg
t
-80 - - V
-80 - - V
-6 - - V
---1
---1
- -200 -400 mV
120 - 390 -
-
-15Collector output capacitance
-50-ns
1
*
- 300 - ns
1
*
1
*
f
-50-ns
A
A
MHz340 -
-
pF
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -80V
V
CB
V
= -4V
EB
= -500mA, IB= -25mA
I
C
= -3V, IC= -100mA
V
CE
= -10V
V
CE
I
=200mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -0.7A,IB1= -70mA,
C
I
=70mA,V
B2
CC
-10V
~
Data Sheet 2SAR554P
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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