ROHM 2SAR544D User Manual
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©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-80V / -2.5A)
(
(2)
(3)
2SAR544D
Features Dimensions (Unit : mm)
1) Low saturation voltage, typically
V
= -0.4V (Max.) (IC / IB= -1A / -50mA)
CE (sat)
2) High speed switching
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
1.5
Structure
PNP Silicon epitaxial planar transistor
Applications
Driver
Packaging specifications
Package CPT3
Type
Code TL
Basic ordering unit (pieces) 2500
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate.
*3 Tc=25℃
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-80 V
-80 V
-2.5 A
*1
*2
*3
150 C
-55 to 150 C
-6 V
-5 A
1W
10 W
0.75
Inner circuit
(1) Base
(2) Collector
(3) Emitter
5.5
0.9
0.65
2.30.9
(1)
(3)
(2)
2.3
1)
1.5
0.8Min.
0.5
1.0
9.5
2.5
1/5
2010.07 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2SAR544D
_
Electrical characteristic (Ta = 25C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-80 - - V
-80 - - V
-6 - - V
---1
---1
*1
- -200 -400 mV
120 - 390 -
*1
-
-32Collector output capacitance
-50-ns
*2
- 400 - ns
*2
-40-ns
*2
f
A
A
MHz280 -
-
pF
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -80V
V
CB
= -4V
V
EB
= -1A, IB= -50mA
I
C
= -3V, IC= -100mA
V
CE
= -10V
V
CE
I
=500mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -1.3A, IB1= -130mA,
C
I
=130mA, V
B2
CC
-10V
~
2/5
2010.07 - Rev.A
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