ROHM 2SAR543R Technical data
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©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-50V / -3A)
2SAR543R
Structure Dimensions (Unit : mm)
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage
V
= -0.4V (Max.) (IC / IB= -2A / -100mA)
CE (sat)
2) High speed switching
Applications
Driver
TSMT3
(1) Base
(2) Emitter
(3) Collector
(3)
(1) (2)
Abbreviated symbol : MR
Packaging specifications
Package TSMT3
Type
Code TL
Basic ordering unit (pieces) 3000
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land
*3 Mounted on a ceramic substrate（40400.7mm ）
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-50 V
-50 V
*1
*2
0.5 W
*3
1.0 W
150 °C
-55 to 150 °C
-6 V
-3 A
-6 A
Inner circuit (Unit : mm)
(1)
(1) Base
(2) Emitter
(3) Collector
(2)
(3)
1/5
2010.12 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2SAR543R
_
Electrical characteristics (Ta=25°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
* See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
t
stg
t
CEO
CBO
EBO
FE
T
ob
on
-50 - - V
-50 - - V
-6 - - V
- - -1.0
- - -1.0
- -200 -400 mV
180 - 450 -
-
35-pFCollector output capacitance
-45-ns
*
- 250 - ns
*
-40-ns
*
f
A
A
MHz300 -
-
ConditionsParameter
= -1mA
I
C
= -100μA
I
C
= -100μA
I
E
= -50V
V
CB
= -4V
V
EB
= -2A, IB= -100mA
I
C
= -3V, IC= -100mA
V
CE
= -10V
V
CE
I
=300mA, f=100MHz
E
= -10V, IE=0A
V
CB
f=1MHz
I
= -2A, IB1= -200mA,
C
I
=200mA, V
B2
CC
~
-10V
2/5
2010.12 - Rev.A
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