ROHM 2SAR542P User Manual

A

Midium Power Transistors (-30V / -5A)

2SAR542P

Structure



PNP Silicon epitaxial planar transistor

Features



1) Low saturation voltage, typically
V

= -0.4V (Max.) (IC / IB= -2A / -100mA)

CE (sat)

2) High speed switching

Applications



Driver

Packaging specifications



Package Taping

Type

Code T100
Basic ordering unit (pieces) 1000

2SAR542P



Dimensions



Inner circuit



(Unit : mm)

(1) (2) (3)

bbreviated symbol : MQ

(Unit : mm)

Absolute maximum ratings



Parameter

(Ta = 25C)

Symbol Limits Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage

Collector current

DC I

Pulsed I

V

Power dissipation

Junction temperature T

Range of storage temperature T

*1 Pw=10ms, Single Pulse

*2 Each terminal mounted on a recommended land.

*3 Mounted on a ceramic board. (40x40x0.7mm³)

CBO

CEO

EBO

CP

P

P

C

D

D

j

stg

-30 V

-30 V

*1

-10 A

*2

0.5 W

*3

150 C

-55 to 150 C

(1) Base
(2) Collector
(3) Emitter

-6 V

-5 A

2W

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

_

Electrical characteristic (Ta = 25C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter staturation voltage

DC current gain

Transition frequency

Turn-on time

Storage time

Fall time

*1 Pulsed

*2 See switching time test circuit

Symbol Min. Typ. Max. Unit

BV

BV

BV

I

I

V

CE(sat)

h

C

CEO

CBO

EBO

CBO

EBO

FE

f

T

ob

t

on

t

stg

t

f

-30 - - V

-30 - - V

-6 - - V

---1

---1

1

*

- -200 -400 mV

200 - 500 -

1

*

-

-40Collector output capacitance

-45-ns

2

*

- 200 - ns

2

*

2

*

-25-ns

A

A

MHz240 -

pF

-

ConditionsParameter

= -1mA

I

C

= -100μA

I

C

= -100μA

I

E

= -30V

V

CB

= -4V

V

EB

= -2A, IB= -100mA

I

C

= -2V, IC= -500mA

V

CE

V

= -10V

CE

=100mA, f=100MHz

I

E

V

= -10V, IE=0A

CB

f=1MHz

= -2.5A,IB1= -250mA,

I

C

=250mA,V

I

B2

CC

-10V

~

Data Sheet 2SAR542P

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

Electrical characteristic curves

-5.0mA

-2.5mA

-0.50

-0.45

[A]

-0.40

C

I

: TNERRUC ROTCELLOC

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

0.0 -0.5 -1 -1.5 -2.0

COLECTOR TO EMITTER VOLTAGE : VCE[V]

Fig.1 Typical Output Characteristics

-2.0mA

-1.5mA

-1.0mA

-0.5mA

1000

Ta=25°C

EFh

:

N
IAG

TNERR

100

U
C C

D

10

-1 -10000-1000-100-10 -1 -10000-1000-100-10

COLLECTOR CURRENT : IC[mA]

Fig.2 DC Current Gain vs.
Collector Current ( Ι )

V

CE

=

-5V

-2V

1000

V

CE

=

-2V

EFh :

NIAG TNERRUC

Ta=125°C

100

C
D

10

COLLECTOR CURRENT : I

75°C
25°C

-40°C

Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )

Data Sheet 2SAR542P

C

[mA]

-1

)[V]tas(

CE

: EGATLOV NOITARUTAS ROTCELLOCV

)Fp(bo

C :
E

CNATIC

AP
AC

TUP

TU
O

R
O
T
C
E

L
L

OC

Ta=25°C

-0.1

Cib

IC/IB=50

Cob

20
10

Ta=25°C
f=1MHz
I

E

=0A

C

=0A

I

EB

[V]

-0.01

-0.001

-1 -10000-1000-100-10

COLLECTOR CURRENT : IC[mA]

Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )

1000

)Fp(biC : ECN

100

ATICAP

A
C TUPNI RE

10

T
TIME

1

-0.1 -1 -10 -100 -0.1 -1 -10 -100

COLLECTOR - BASE VOLTAGE : VCB [V]

EMITTER - BASE VOLTAGE : V

Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage

]V[)tas(

EC

V : EGATLOV NOITARUTAS ROTCELLOC

-0.001

[MHz]

T

f

:
YC

N
EUQER

F

NOITI

SN
ART

-1
IC/IB=20

-0.1

-0.01

-1 -10000-1000-100-10

COLLECTOR CURRENT : I

Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )

1000

Ta=25°C

V

CE

=

-10V

100

10

10 100 1000

EMITTER CURRENT : IE[mA]

Fig.8 Gain Bandwidth Product vs.
Emitter Current

Ta=125°C

75°C
25°C

-40°C

C

[mA]

-10000
V

CE

=

-2V

]Am

[

-1000

C

I : T

N
E
R
RUC RO

-100

T
C
E

-10

LLO

C

-1

0.3 -0.2 -0.7 -1.2

-100

]
A

[

C

I

-10

:

T
N

ER
RU

-1

C
R

OTC

ELL

-0.1

O
C

-0.01

COLLECTOR TO EMITTER VOLTAGE : V

Ta=125°C

75°C
25°C

-40°C

BASE TO EMITTER VOLTAGE : V

Fig.6 Ground Emitter Propagation
Characteristics

Single pulse

DC Ta=25°C
(Mounted on a
recommended land)

DC Ta=25°C
(Mounted on a ceramic board)

Fig.9 Safe Operating Area

1ms

10ms

100ms

BE

[V]

CE

[V]

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

_~_

Switching time test circuit

V

IN

Pw

Pw 50μs

DUTY CYCLE1%

Data Sheet 2SAR542P

RL=4Ω

I

B1

I

C

~

VCC -10V

I

B2

BASE CURENT WAVEFORM

COLLECTOR CURRENT WAVEFORM

90%

10%

I

B2

I

B1

t

on

t

stg

t

f

I

C

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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