ROHM 2SAR523M, 2SAR523EB, 2SAR523UB User Manual
General purpose transistor(-50V,-0.1A)
2SAR523M/2SAR523EB/2SAR523UB
Structure Dimensions (Unit : mm)
PNP silicon epitaxial planar transistor
Features
Complemets the 2SCR523M/2SCR523EB/2SCR523UB.
Applications
Switch, LED driver
Packaging specifications
Package VMT3 EMT3F UMT3F
Type
2SAR523M
2SAR523EB
2SAR523UB
Packaging Type
Code
Basic ordering
unit (pieces)
Taping
T2L
8000
Taping
TL
3000
Taping
TL
3000
Absolute maximum ratings (Ta=25C) inner circuit
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power
dissipation
2SAR523M,2SAR523EB
2SAR523UB
Symbol
V
V
VEBO −5
ICP
P
Junction temperature
Storage temperature
∗1
Pw=1mS Single pulse
∗2
Each terminal mounted on a recommended land
T
CBO −50 V
CEO
I
C
D
T
stg
Limits
−50 V
∗1
150
∗2
200
j 150
−55 to +150 °C
Unit
V
mA−100
mA−200
mW
mW
°C
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV
BV
BV
I
I
V
CE(sat)
h
Cob
CBO
EBO
f
CEO
CBO
EBO
FE
T
−
50
−
50
−
−
−
−
120
−
−
−
−
5
−
−
−
−
0.15
−
300
2
−
−
−
560
−
−
−
0.1
0.1
0.40
−
−
VMT3
EMT3F
UMT3F
MHz
2.1
(3)
(2)
V
V
V
μA
μA
V
−
pF
Abbreviated symbol : PB
(3)
(1) (2)
Abbreviated symbol : PB
2.0
0.32
(3)
0.4250.425
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : PB
(1)
C
=
−
1mA
I
I
C
=
−
50μA
E
=
−
50μA
I
CB
=
−
V
EB
=
−
V
I
C
=
−
50mA, I
CE
=
−
V
V
CE
=
−
V
CB
=
−
0.9
0.530.53
0.13
(1) Base
(2) Emitter
(3) Collector
50V
5V
B
=
−
6V, I
C
=
−
1mA
10V, IE=10mA, f=100MHz
10V, IE=0A, f=1MHz
5mA
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Data Sheet 2SAR523M/2SAR523EB/2SAR523UB
Electrical characteristics curves
-100
(mA)
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION
VCE =2V
Ta=125°C
-10
25°C
-55°C
-1
-0.1
-0.01
(sat) (V)
CE
0 -0.4 -0.8-0.2
-1
Ta=25
IC/I
IC/I
°C
B
= 20/1
B =
10/1
-0.6
-0.1
VOLTAGE : V
-0.01
-1 -10 -100
COLLECTOR CURRENT : IC (mA)
-1
B
=450uA
I
I
B
=400uA
B
=350uA
I
IB=300uA
(mA)
C
-50
-40
B
=500uA
I
-30
-20
-10
COLLECTOR CURRENT : I
0
0 -1-2-3-4-5
CE
(V)
V
-1
IC/IB= 10/1
Ta=125°C
(sat) (V)
CE
25°C
-55°C
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
-1 -10 -100
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)
Ta=25
°C
IB=250uA
I
B
=200uA
I
B
=150uA
I
B
=100uA
I
B
=50uA
I
B
=0uA
1000
FE
100
DC CURENT GAIN : h
Ta=125°C
-55°C
10
-0.1 -1 -10 -100
COLLECTOR CURRENT : I
1000
(MHz)
T
VCE = 10V
Ta=25
°C
100
TRANSITION FREQUENCY :f
10
-0.1 -1 -10 -100 -1000
25°C
VCE=5V
C
(mA)BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :
100
10
Cob
Cib (pF)
Cob (pF)
1
Ta=25
°C
f=1MHz
I
E
=0
I
C
=0
0.1
-0.01 -0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
Cib
EB
(V)
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
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