ROHM 2SAR523M, 2SAR523EB, 2SAR523UB User Manual

General purpose transistor(-50V,-0.1A)

2SAR523M/2SAR523EB/2SAR523UB

Structure

PNP silicon epitaxial planar transistor

Features

Complemets the 2SCR523M/2SCR523EB/2SCR523UB.

Applications

Switch, LED driver

Packaging specifications

		Package	VMT3			EMT3F			UMT3F
		Packaging Type	Taping			Taping			Taping
Type
		Code	T2L			TL				TL
		Basic ordering	8000			3000			3000
		unit (pieces)
2SAR523M
2SAR523EB
2SAR523UB

Dimensions (Unit : mm)

VMT3

Abbreviated symbol : PB

EMT3F

	(3)
(1)	(2)

Abbreviated symbol : PB

UMT3F

			2.0		0.9
		0.32
	0.425				0.53
		(3)
2.1	1.25
	0.425	(1)		(2)	0.53
		0.65	0.65		0.13
		1.3

Abbreviated symbol : PB

 Absolute maximum ratings (Ta=25 C)

		Parameter		Symbol	Limits	Unit
	Collector-base voltage			VCBO	−50	V
	Collector-emitter voltage			VCEO	−50	V
	Emitter-base voltage			VEBO	−5	V
	Collector current			IC	−100	mA
				ICP 1	−200	mA
	Power		2SAR523M,2SAR523EB	PD 2	150	mW
	dissipation		2SAR523UB		200	mW
	Junction temperature			Tj	150	°C
	Storage temperature			Tstg	−55 to +150	°C

1 Pw=1mS Single pulse

2 Each terminal mounted on a recommended land

Electrical characteristics (Ta=25 C)

inner circuit

(3)

(1)

(1) Base

(2) Emitter

(2)(3) Collector

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-emitter breakdown voltage	BVCEO	−50	−	−	V	IC= −1mA
Collector-base breakdown voltage	BVCBO	−50	−	−	V	IC= −50μA
Emitter-base breakdown voltage	BVEBO	−5	−	−	V	IE= −50μA
Collector cut-off current	ICBO	−	−	−0.1	μA	VCB= −50V
Emitter cut-off current	IEBO	−	−	−0.1	μA	VEB= −5V
Collector-emitter saturation voltage	VCE(sat)	−	−0.15	−0.40	V	IC= −50mA, IB= −5mA
DC current gain	hFE	120	−	560	−	VCE= −6V, IC= −1mA
Transition frequency	fT	−	300	−	MHz	VCE= −10V, IE=10mA, f=100MHz
Output capacitance	Cob	−	2	−	pF	VCB= −10V, IE=0A, f=1MHz

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2SAR523M/2SAR523EB/2SAR523UB	Data Sheet

Electrical characteristics curves

: IC (mA)	-100	VCE =2V
	-10	Ta=125°C
CURRENT
		25°C
		-55°C
	-1
COLLECTOR	-0.1
	-0.01
	0	-0.2 -0.4 -0.6	-0.8	-1
	BASE TO EMITTER VOLTAGE : VBE (V)

-1	Ta=25°C
SATURATION VCE(sat) (V)	IC/IB = 20/1
	IC/IB =10/1
-0.1
COLLECTOR VOLTAGE:
-0.01
	-1	-10	-100

COLLECTOR CURRENT : IC (mA)

100
10				Cib
Cob(pF) Cib (pF)			Cob
	Ta=25°C
1
	f=1MHz
		IE=0
0.1		IC=0
-0.01		-0.1	-1	-10	-100

COLLECTOR TO BASE VOLTAGE : VCB (V)

EMITTER TO BASE VOLTAGE : VEB(V)

				IB=450uA
		IB=500uA		IB=400uA
				IB=350uA
(mA)	-50			IB=300uA		IB=250uA	1000			VCE=5V
COLLECTOR CURRENT : IC	-40					IB=200uA
	-30					IB=150uA
							100
	-20					IB=100uA	DCCURENTGAINFEh:
	-10					IB=50uA		Ta=125°C
								25°C
				Ta=25°C IB=0uA				-55°C
	0
							10
	0	-1	-2	-3	-4	-5	-0.1	-1		-10	-100
	COLLECTOR TO EMITTER VOLTAGE :							COLLECTOR CURRENT : IC (mA)
				VCE (V)
	-1	IC/IB= 10/1				TRANSITIONFREQUENCY :fT (MHz)	1000	VCE = 10V
COLLECTOR SATURATION
								Ta=25°C
	Ta=125°C
		25°C
		-55°C
	-0.1						100
	VOLTAGE(sat)(V)CEV:						10
	-0.01
	-1			-10		-100	-0.1	-1	-10	-100	-1000

COLLECTOR CURRENT : IC (mA)

EMITTER CURRENT : IE (mA)

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○ 2009 ROHM Co., Ltd. All rights reserved.