ROHM 2SAR523M, 2SAR523EB, 2SAR523UB User Manual

General purpose transistor(-50V,-0.1A)
2SAR523M/2SAR523EB/2SAR523UB
Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor
Features
Complemets the 2SCR523M/2SCR523EB/2SCR523UB.
Applications
Switch, LED driver
Packaging specifications
Package VMT3 EMT3F UMT3F
Type
2SAR523M 2SAR523EB 2SAR523UB
Packaging Type Code Basic ordering
unit (pieces)
Taping
T2L
8000
Taping
TL
3000
Taping
TL
3000
Absolute maximum ratings (Ta=25C) inner circuit
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Power dissipation
2SAR523M,2SAR523EB 2SAR523UB
Symbol
V V VEBO 5
ICP P
Junction temperature Storage temperature
1
Pw=1mS Single pulse
2
Each terminal mounted on a recommended land
T
CBO −50 V CEO
I
C
D
T
stg
Limits
50 V
1
150
2
200
j 150
55 to +150 °C
Unit
V mA−100 mA−200
mW mW
°C
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance
BV BV BV
I I
V
CE(sat)
h
Cob
CBO EBO
f
CEO CBO EBO
FE T
50
50
120
5
0.15
300
2
560
0.1
0.1
0.40
VMT3
EMT3F
UMT3F
MHz
2.1
V V V
μA μA
V
pF
Abbreviated symbol : PB
(3)
(1) (2)
Abbreviated symbol : PB
2.0
0.32 (3)
0.4250.425
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : PB
C
=
1mA
I I
C
=
50μA
E
=
50μA
I
CB
=
V
EB
=
V I
C
=
50mA, I
CE
=
V V
CE
=
V
CB
=
0.9
0.530.53
0.13
(1) Base (2) Emitter (3) Collector
50V 5V
B
=
6V, I
C
=
1mA 10V, IE=10mA, f=100MHz 10V, IE=0A, f=1MHz
5mA
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Data Sheet 2SAR523M/2SAR523EB/2SAR523UB
Electrical characteristics curves
-100
(mA)
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION
VCE =2V
Ta=125°C
-10
25°C
-55°C
-1
-0.1
-0.01
(sat) (V)
CE
0 -0.4 -0.8-0.2
-1
Ta=25
IC/I
IC/I
°C
B
= 20/1
B =
10/1
-0.6
-0.1
VOLTAGE : V
-0.01
-1 -10 -100
COLLECTOR CURRENT : IC (mA)
-1
B
=450uA
I I
B
=400uA
B
=350uA
I
IB=300uA
(mA)
C
-50
-40
B
=500uA
I
-30
-20
-10
COLLECTOR CURRENT : I
0
0 -1-2-3-4-5
CE
(V)
V
-1
IC/IB= 10/1
Ta=125°C
(sat) (V)
CE
25°C
-55°C
-0.1
VOLTAGE : V
COLLECTOR SATURATION
-0.01
-1 -10 -100
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)
Ta=25
°C
IB=250uA
I
B
=200uA
I
B
=150uA
I
B
=100uA
I
B
=50uA
I
B
=0uA
1000
FE
100
DC CURENT GAIN : h
Ta=125°C
-55°C
10
-0.1 -1 -10 -100
COLLECTOR CURRENT : I
1000
(MHz)
T
VCE = 10V
Ta=25
°C
100
TRANSITION FREQUENCY :f
10
-0.1 -1 -10 -100 -1000
25°C
VCE=5V
C
(mA)BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE :
100
10
Cob
Cib (pF)
Cob (pF)
1
Ta=25
°C
f=1MHz
I
E
=0
I
C
=0
0.1
-0.01 -0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
Cib
EB
(V)
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2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.A
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
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Notice
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