A
(
(2)
(3)
Medium Power Transistors (−30V / −2A)
2SAR512P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
= -0.4V (Max.) (IC / IB= -700mA / -35mA)
CE (sat)
2) High speed switching
Dimensions
MPT3
(Unit : mm)
(1) (2) (3)
Applications
Driver
Packaging specifications
Package Taping
Type
Code T100
Basic ordering unit (pieces) 1000
2SAR512P
Absolute maximum ratings
Parameter
(Ta = 25°C)
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
Power dissipation
DC I
Pulsed I
V
P
P
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recom mended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
CBO
CEO
EBO
C
CP
D
D
j
stg
*1
*2
*3
-55 to 150
-30 V
-30 V
-6 V
-2 A
-4 A
0.5 W
2W
150
C
°
C
°
(1)Base
(2)Collector
(3)Emitter
Inner circuit
(1) Base
(2) Collector
(3) Emitter
bbreviated symbol : MB
(Unit : mm)
1)
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2009.10 - Rev.A
_
Electrical characteristic (Ta = 25°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
on
t
stg
t
CBO
CEO
EBO
FE
T
ob
f
-30 - - V
-30 - - V
-6 - - V
---1
---1
*
1
- -200 -400 mV
200 - 500 -
*
1
-
-15Collector output capacitance
-30-ns
2
*
-170-ns
2
*
2
-15-ns
*
-
A
µ
A
µ
MHz430 -
pF
ConditionsParameter
I
= -1ｍA
C
I
= -100µA
C
I
= -100µA
E
V
= -30V
CB
V
= -4V
EB
I
= -700mA, IB= -35mA
C
V
= -2V, IC= -100mA
CE
= -10V
V
CE
I
=100mA, f=100MHz
E
= -10V, IE=0A
V
CB
ｚ
f=1MH
I
= -1A,IB1= -100mA,
C
I
=100mA,V
B2
CC
-10V
~
Data Sheet 2SAR512P
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
Data Sheet 2SAR512P
Electrical characteristic curves
-3.0mA-5.0mA
-2.5mA
-2.0mA
-1.5mA
-1.0mA
-0.5mA
Fig.1 Typical Output Characteristics
IC/IB=50
20
10
COLLECTOR CURRENT : I
C
[mA]
-2.0-1.5-1.0-0.50.0
COLLECTOR SATURATION VOLTAGE :
-0.50
-0.45
[A]
C
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
COLLECTOR CURRENT : I
-0.05
0.00
COLECTOR TO EMITTER VOLTAGE : V
-1
Ta=25 C
-0.1
(sat)[V]
CE
V
-0.01
-0.001
-1 -10 -100 -1000 -10000
Fig4. Collector-Emitter Saturation Voltage
vs. Collector Current ( )Ι
FE
1000
100
Ta=25 C
VCE= -5V
-2V
FE
1000
100
VCE= -2V
Ta=125 C
C
75
25 C
C
-40
DC CURRENT GAIN : h
10
-1 -10 -100 -1000 -10000
[V]
CE
COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA]
Fig2. DC Current Gain
vs. Collector Current ( )
-1
IC / IB=20
-0.1
(sat)[V]
CE
V
-0.01
COLLECTOR SATURATION VOLTAGE :
-0.001
-1 -10 -100 -1000 -10000
Ta=125 C
COLLECTOR CURRENT : I
75 C
25 C
-40 C
C
Ι
[mA]
Fig5. Collector-Emitter Saturation Voltage
vs. Collector Current ( )
ΙΙ
DC CURRENT GAIN : h
10
-1 -10 -100 -1000 -10000
Fig3. DC Current Gain
vs.Collector Current ( )
-10000
VCE= -2V
[mA]
Ta=125 C
C
-1000
-100
COLLECTOR CURRENT : I
75 C
25 C
-40 C
-10
-1
BASE TO EMITTER VOLTAGE : V
Fig.6 Ground Emitter Propagation
Characteristics
ΙΙ
-1.5-1-0.50
[V]
BE
1000
100
Cib
Ta=25 C
f=1MHz
=0A
I
E
=0A
I
C
1000
Ta=25 C
V
=-10V
[MHz]
CE
T
(A)
DC Ta=25
-10
(Mounted on a ceramic board)
C
-1
100
DC Ta=25 C
-0.1
10
1
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
-0.1 -1 -10 -100
COLLECTOR - BASE VOLTAGE : V
EMITTER - BASE VOLTAGE : V
vs. Emitter-Base Voltage
Collector Output Capacitance
vs. Collector-Base Voltage
Cob
TRANSITION FREQUENCY : f
10
10 100 1000
(V)
CB
(V)
EB
EMITTER CURRENT : I
Fig8. Gain Bandwidth Product vs.
Emitter Current
E
[mA]
(Mounted on a
recommended land)
COLLECTOR CURRENT : I
Single pulse
-0.01
-0.1 -1 -10 -100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.9 Safe Operating AreaFig.7 Emitter Input Capacitance
C
1ms
10ms
100ms
(V)
CE
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2009.10 - Rev.A
_~_
Switching time test circuit
V
IN
Pw
Pw 50µs
DUTY CYCLE≦1%
Data Sheet 2SAR512P
RL=10Ω
I
B1
I
C
V
-10V
~
CC
I
B2
BASE CURENT WAVEFORM
*1 Pw=10ms, Single Pulse
COLLECTOR CURRENT WAVEFORM
*3 Mounted on a ceramic board. (40x40x0.7mm³)
90%
10%
tstgton tf
I
B2
I
B1
I
C
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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