ROHM 2SAR512P Technical data
A
(
(2)
(3)
Medium Power Transistors (−30V / −2A)
2SAR512P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
= -0.4V (Max.) (IC / IB= -700mA / -35mA)
CE (sat)
2) High speed switching
Dimensions
MPT3
(Unit : mm)
(1) (2) (3)
Applications
Driver
Packaging specifications
Package Taping
Type
Code T100
Basic ordering unit (pieces) 1000
2SAR512P
Absolute maximum ratings
Parameter
(Ta = 25°C)
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
Power dissipation
DC I
Pulsed I
V
P
P
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recom mended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
CBO
CEO
EBO
C
CP
D
D
j
stg
*1
*2
*3
-55 to 150
-30 V
-30 V
-6 V
-2 A
-4 A
0.5 W
2W
150
C
°
C
°
(1)Base
(2)Collector
(3)Emitter
Inner circuit
(1) Base
(2) Collector
(3) Emitter
bbreviated symbol : MB
(Unit : mm)
1)
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2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
_
Electrical characteristic (Ta = 25°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
f
C
t
on
t
stg
t
CBO
CEO
EBO
FE
T
ob
f
-30 - - V
-30 - - V
-6 - - V
---1
---1
*
1
- -200 -400 mV
200 - 500 -
*
1
-
-15Collector output capacitance
-30-ns
2
*
-170-ns
2
*
2
-15-ns
*
-
A
µ
A
µ
MHz430 -
pF
ConditionsParameter
I
= -1ｍA
C
I
= -100µA
C
I
= -100µA
E
V
= -30V
CB
V
= -4V
EB
I
= -700mA, IB= -35mA
C
V
= -2V, IC= -100mA
CE
= -10V
V
CE
I
=100mA, f=100MHz
E
= -10V, IE=0A
V
CB
ｚ
f=1MH
I
= -1A,IB1= -100mA,
C
I
=100mA,V
B2
CC
-10V
~
Data Sheet 2SAR512P
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.10 - Rev.A
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