ROHM 2SAR293P User Manual
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Midium Power Transistors (-30V / -1A)
(
(2)
(3)
2SAR293P
Structure Dimensions (Unit : mm)
PNP Silicon epitaxial planar transistor
Features
Low saturation voltage
V
= -0.35V (Max.) (IC / IB= -500mA / -25mA)
CE (sat)
MPT3
(SC-63)
<SOT-428>
(1) (2) (3)
Applications
Driver
Packaging specifications
Package MPT3
Type
Code T100
Basic ordering unit (pieces) 1000
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage
Collector current
DC I
Pulsed I
V
Power dissipation
Junction temperature T
Range of storage temperature T
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land
*3 Mounted on a 40×40×0.7 [mm] ceramic substrate
CBO
CEO
EBO
CP
P
P
C
D
D
j
stg
-30 V
-30 V
*1
*1
*2
*2
0.5 W
*3
*3
2.0 W
150 °C
-55 to 150 °C
-6 V
-1 A
-2 A
(1) Base
(2) Collector
(3) Emitter
Inner circuit
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : ML
1)
1/5
2010.11 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2SAR293P
_
Electrical characteristic (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter staturation voltage
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Symbol Min. Typ. Max. Unit
BV
BV
BV
I
I
V
CEO
CBO
EBO
CBO
EBO
CE(sat)
h
FE
f
T
C
ob
t
on
t
stg
t
-30 - - V
-30 - - V
-6 - - V
- - -100 nA
- - -100 nA
*1
- -150 -350 mV
270 - 680 -
*1
-
7-pFCollector output capacitance
*2
-60-ns
*2
- 160 - ns
*2
f
-50-ns
MHz320 -
-
Conditions
= -1mA
I
C
= -10μA
I
C
= -10μA
I
E
= -30V
V
CB
= -6V
V
EB
= -500mA, IB= -25mA
I
C
= -2V, IC= -100mA
V
CE
V
= -2V, IE=100mA
CE
f=100MHz
V
= -10V, IE=0A
CB
f=1MHz
I
= -500mA, IB1= -25mA
C
I
=25mA, V
B2
CC
-10V
~
2/5
2010.11 - Rev.A
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