ROHM 2SAR293P User Manual

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©2010 ROHM Co., Ltd. All rights reserved.

Midium Power Transistors (-30V / -1A)

(

(2)

(3)

2SAR293P

Structure  Dimensions (Unit : mm)

PNP Silicon epitaxial planar transistor

Features

Low saturation voltage
V

= -0.35V (Max.) (IC / IB= -500mA / -25mA)

CE (sat)

MPT3

(SC-63)
<SOT-428>

(1) (2) (3)

Applications

Driver

 Packaging specifications

Package MPT3

Type

Code T100
Basic ordering unit (pieces) 1000

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol Limits Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage

Collector current

DC I

Pulsed I

V

Power dissipation

Junction temperature T

Range of storage temperature T

*1 Pw=10ms, Single Pulse

*2 Mounted on a recommended land

*3 Mounted on a 40×40×0.7 [mm] ceramic substrate

CBO

CEO

EBO

CP

P

P

C

D

D

j

stg

-30 V

-30 V

*1

*1

*2

*2

0.5 W

*3

*3

2.0 W

150 °C

-55 to 150 °C

-6 V

-1 A

-2 A

(1) Base
(2) Collector
(3) Emitter

 Inner circuit

(1) Base
(2) Collector
(3) Emitter

Abbreviated symbol : ML

1)

1/5

2010.11 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

2SAR293P

_

Electrical characteristic (Ta=25°C)

Parameter

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter staturation voltage

DC current gain

Transition frequency

Turn-on time

Storage time

Fall time

*1 Pulsed

*2 See switching time test circuit

Symbol Min. Typ. Max. Unit

BV

BV

BV

I

I

V

CEO

CBO

EBO

CBO

EBO

CE(sat)

h

FE

f

T

C

ob

t

on

t

stg

t

-30 - - V

-30 - - V

-6 - - V

- - -100 nA

- - -100 nA

*1

- -150 -350 mV

270 - 680 -

*1

-

7-pFCollector output capacitance

*2

-60-ns

*2

- 160 - ns

*2

f

-50-ns

MHz320 -

-

Conditions

= -1mA

I

C

= -10μA

I

C

= -10μA

I

E

= -30V

V

CB

= -6V

V

EB

= -500mA, IB= -25mA

I

C

= -2V, IC= -100mA

V

CE

V

= -2V, IE=100mA

CE

f=100MHz

V

= -10V, IE=0A

CB

f=1MHz

I

= -500mA, IB1= -25mA

C

I

=25mA, V

B2

CC

-10V

~

2/5

2010.11 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

2SAR293P

lElectrical characteristic curves (Ta=25C)

-0.50

-0.45

-0.40

-0.35

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

-5.0-4.0-3.0-2.0-1.00.0

COLLECTOR CURRENT :I

C

[A]

COLECTOR TO EMITTER VOLTAGE:VCE[V]

Fig.1 Typical Output Characteristics

-3.0mA

-1.5mA

-1.0mA

IB=-0.5mA

-4.0mA

-5.0mA

-2.0mA

Ta=25C

10

100

1000

-1 -10 -100 -1000

DC CURRENT GAIN :h

FE

COLLECTOR CURRENT :IC[mA]

Fig.2 DC Current Gain vs. Collector Current(Ⅰ)

Ta=25°C

VCE=-5V

-2V

10

100

1000

-1 -10 -100 -1000

DC CURRENT GAIN :h

FE

COLLECTOR CURRENT :IC[mA]

Fig.3 DC Current Gain vs. Collector Current(Ⅱ)

VCE=-2V
Pulsed

Ta=125°C

75°C
25°C

-40°C

-0.01

-0.1

-1

-10

-1 -10 -100 -1000

COLLECTOR SATURATION VOLTAGE :V

CE

(sat)[V]

COLLECTOR CURRENT :IC[mA]

Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)

Ta=25°C
Pulsed

IC/IB=50

20
10

-0.01

-0.1

-1

-1 -10 -100 -1000

COLLECTOR SATURATION VOLTAGE :V

CE

(sat)[V]

COLLECTOR CURRENT :IC[mA]

Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ)

IC/IB=20
Pulsed

Ta=125°C

75°C
25°C

-40°C

-1

-10

-100

-1000

-1.5-1-0.50

COLLECTOR CURRENT :I

C

[mA]

BASE TO EMITTER VOLTAGE :VBE[V]

Fig.6 Ground Emitter Propagation Characteristics

VCE=-2V
Pulsed

Ta=125°C

75°C
25°C

-40°C

3/5

2010.11 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

2SAR293P

1

10

100

-0.1 -1 -10 -100

COLLECTOR OUTPUT CAPACITANCE : Cob(pF)

EMITTER INPUT CAPACITANCE : Cib(pF)

COLLECTOR - BASE VOLTAGE : VCB (V)

EMITTER - BASE VOLTAGE : VEB (V)

Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs.Collector-Base Voltage

Ta=25°C
f=1MHz

IC=0A

Cob

Cib

10

100

1000

10 100 1000

TRANSITION FREQUENCY : f

T

[MHz]

EMITTER CURRENT :IE[mA]

Fig8. Gain Bandwidth Productvs. Emitter Current

-0.001

-0.01

-0.1

-1

-10

-0.1 -1 -10 -100

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE :VCE(V)

Fig9. SAFE OPERATING AREA

Ta=25°C
Single non repetitive pulse

100ms

10ms

1ms

DC
（Mounted on a
recommended land)

DC
（Mounted on a
ceramic board)

Ta=25°C
V

CE

=-2V

f=100MHz

4/5

2010.11 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

2SAR293P

_~_

 Switching time test circuit

RL=10Ω

I

B1

V

IN

Pw

Pw 50μs

DUTY CYCLE≦1%

BASE CURENT WAVEFORM

I

C

VCC -5V

~

I

B2

I

B2

I

B1

t

on

t

t

stg

f

COLLECTOR CURRENT WAVEFORM

90%

10%

I

C

5/5

2010.11 - Rev.A

Notes

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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A