ROHM 2SA2199 Schematic [ru]
Transistors
General Purpose Transistor
(−50V, −100mA)
2SA2199
zApplications
Small signal low frequency amplifier
zFeatu res
1) Excellent h
FE linearity .
2) Complements the 2SC6114.
zStructure
PNP silicon epitaxial
planar transistor
zAbsolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
zDimensions (Unit : mm)
VMN3
0.22
0.1
0.8
1.0
0.1
(1) (2)
0.17
0.35
0.6
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : P
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
CP
P
Tj
Tstg
C
∗1
∗2
D
−50 V
−50
−5
−100I
−200
150
150
−55 to +150
2SA2199
0.16
(3)
0.37
V
V
mA
mW
°C
°C
1/3
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
FE RANK
h
Rank Q R
FE
h
zElectrical characterristic curves
100
mA)
10
120 to 270 180 to 390
Ta=125˚C
25˚C
−40˚C
VCE= −6V
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
f
CEO
CBO
EBO
FE
T
1000
FE
Min.
−50
−50
−5
−
−
−
120
−
−
Ta=25˚C
Typ. Max. Unit Conditions
110
2.0
−
−
−
−
−
−
−
VCE= 6V
−0.1
−0.1
−0.3
390
2V
−
−
−
MHz
−
−
C
=−1mA
VI
V
C
=−50µA
I
V
I
E
=−50µA
µA
µA
pF
CB
V
VEB=−5V
V
C/IB
I
CE
−
V
CE
V
CB
V
=−50V
=−25mA/−2.5mA
=−6V, IC=−2mA
=−10V, IE=1mA, f=100MHz
=−10V, IE=0A, f=1MHz
1000
Ta=125˚C
25˚C
FE
−40˚C
2SA2199
VCE=6V
1
COLLECTOR CURRENT : Ic (
0.1
0.1 1 10
BASE TO EMITTER VOLTAGE : V
BE (
Fig.1 Grounded emitter propagation
characteristics
1
Ta=125˚C
V)
0.1
(
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE : V
0.01
25˚C
−40˚C
0.1 1 10 100
COLLECTOR CURRENT : I
Ic/Ib=10/1
C
(
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
100
DC CURRENT GAIN : h
10
0.1 1 10 100
V)
COLLECTOR CURRENT : IC (
Fig.2 DC current gain vs.
collector current (Ι)
10
pF)
1
0.01 0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
Fig.5 Collector output capacitance
100
DC CURRENT GAIN : h
10
0.1 1 10 100
mA)
COLLECTOR CURRENT : IC (
mA)
Fig.3 DC current gain vs.
collector current (ΙΙ)
Ta=25˚C
f=1MHz
I
E
=0A
50
Ta=25˚C
mA)
40
(
C
30
20
10
COLLECTOR CURRENT : I
0 12345678910
COLLECTOR TO EMITTER VOLTAGE : VCE (
IB=250uA
IB=200uA
IB=150uA
IB=100uA
IB=50uA
Fig.6 Typical output characteristics
V)
2/3
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