ROHM 2SA2018, 2SA2030, 2SA2119K Technical data
2SA2018 / 2SA2030 / 2SA2119K
Transistors
Low frequency transistor
2SA2018 / 2SA2030 / 2SA21 19K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE (sat) ≤ 250mA
At I
C = −200mA / IB = −10mA
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗Single pulse, Pw=1ms
V
CBO
V
CEO
V
EBO
I
C
I
CP
VMT3
P
EMT3
C
SMT3 200
Tj 150
Tstg
Limits
−15
−12
−6V
−500
−1
150
−55 to +150
Unit
V
V
mA
A
mW
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cutoff current I
DC current transfer ratio h
Collector-emitter saturation voltage V
Transition frequency f
Output capacitance Cob − 6.5 − pF
Symbol Min. Typ. Max. Unit Conditions
BV
−15 −−VIC= −10µA
CBO
−12 −−V
CEO
−6 −−V
EBO
−−−100 nA
CBO
−−−100 nA
EBO
270 − 680 −
FE
CE (sat)
−−100 −250 mV
− 260 − MHz
T
zDimensions (Unit : mm)
2SA2018
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SA2030
ROHM : VMT3
2SA2119K
∗
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
I
= −1mA
C
I
= −10µA
E
V
= −15V
CB
V
= −6VEmitter cutoff current I
EB
= −2V / IC= −10mA
V
CE
= −200mA / IB= −10mA
I
C
= −2V, IE=10mA, fT=100MHz
V
CE
= −10V, IE=0A, f=1MHz
V
CB
Each lead has same dimensions
Abbreviated symbol : BW
Each lead has same dimensions
Abbreviated symbol : BW
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : BW
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
(1) Base
(2) Emitter
(3) Collector
0.3Min.
(1) Emitter
(2) Base
(3) Collector
Rev.C 1/2
2SA2018 / 2SA2030 / 2SA2119K
Transistors
zPackaging specifications and hFE
Package name
Type
Code
h
Basic ordering unit (pieces)
FE
2SA2119K
2SA2018
2SA2030
zElectrical characteristic curves
1000
500
(mA)
200
C
Ta=125°C
Ta=25°C
100
Ta= −40°C
50
20
10
5
2
COLLECTOR CURRENT : I
1
0 0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
200
100
Ta=125°C
(mV)
Ta=25°C
50
Ta= −40°C
CE (sat)
20
10
5
COLLECTOR SATURATION
VOLTAGE : V
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : I
Fig.7 Gain Bandwidth Product vs.
Emitter Current
VCE=2V
VCE=2V
Ta=25°C
(mA)
C
(V)
BE
IC / IB=20
(mA)
C
T146
3000
−
−−
(mA)
C
COLLECTOR CURRENT : I
COLLECTOR SATURATION
Cib (pF)
EMITTER INPUT CAPACITANCE :
Fig.8 Collector Output Capacitance vs.
Taping
TL
3000
−
T2L
8000
−
−
200
180
160
140
120
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Typical Output Characteristics
1000
500
200
100
(mV)
50
CE (sat)
20
IC / IB=10
10
5
VOLTAGE : V
2
1
1 2 5 10 20 50 100 200 5001000
Fig.5 Collector-Emitter Saturation
1000
500
Cob (pF)
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE :
EMITTER TO BASE VOLTAGE : V
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
I
=700µA
B
IB=100µA
IB=0µA
IC / IB=50
IC / IB=20
COLLECTOR CURRENT : I
Voltage vs.
Collector Current (ΙΙ)
Cib
Cob
IB=600µA
I
=500µA
B
IB=400µA
IB=300µA
IB=200µA
Ta=25
pulsed
Ta=25°C
(mA)
C
IE=0A
f=1MHz
Ta=25°C
EB
1000
500
FE
200
Ta=125°C
100
Ta=25°C
Ta= −40°C
50
20
10
5
°C
CE
DC CURRENT GAIN : h
(V)
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Fig.3 DC Current Gain vs.
10000
(mV)
5000
BE (sat)
2000
1000
BASER SATURATION VOLTAGE : V
Ta= −40°C
Ta=25°C
Ta=125°C
500
200
100
50
20
10
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : I
Fig.6 Base-Emitter Saturation
Voltage vs.Collecter Current
(V)
Collector Current
VCE=2V
(mA)
C
IC / IB=20
(mA)
C
Rev.C 2/2
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