ROHM 2SA2093 Schematic [ru]

Transistors

Power transistor (−60V, −2A)

2SA2093

zFeatures

1) High speed switching.
(tf : Ty p. : 30ns at IC = −2A)

2) Low saturation voltage, typically
(Typ. : −200mV

at IC =

−

1.0A, IB = −0.1A)

3) Strong discharge power for inductive load and
capacitance load.

4) Complements the 2SC5880

zApplications
Small signal low frequency amplifier
High speed switching

zDimensions (Unit : mm)

ATV

(1) Emitter
(2) Collector
(3) Base

Abbreviated symbol :

Taping specifications

A2093

2SA2093

zStructure
PNP Silicon epitaxial plana r transistor

zPackaging specifications

Taping

TV2

2500

Type

2SA2093

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature
Range of storage temperature

∗Pw=10ms

DC
Pulsed

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Tj

Tstg

Limits Unit

−60

−60

−6

−2.0

−4.0

1.0

150

−55 to 150

W

°C
°C

V
V
V
A

∗

A

Rev.A 1/3

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Condition

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time
Storage time
Fall time

∗Single non repetitive pulse

FE RANK

zh

QR

120−270 180−390

zElectrical characteristic curves

−10

(A)

C

−1

Ta=125°C
Ta=25°C
Ta= −40°C

−0.1

COLLECTOR CURRENT : I

−0.01
0 −0.5 −1 −1.5

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded Emitter

Propagation Characteristics

−10

VCE= −2V

Ta=25°C

BV
BV
BV

V

Tstg

CEO
CBO
EBO

I

CBO

I

EBO

CE (sat)

h

FE

f

T

Cob

Ton

Tf

−60

−60

−6

−

−

−

120

−

−

−

−

−

1000

FE

100

10

DC CURRENT GAIN : h

1

−0.001 −0.01 −0.1

−10

−

−

−

−

−

−200

−

310

25

25

120

30

COLLECTOR CURRENT : IC (A)

−

−

−

−1.0

−1.0

−500

390

−

−

−

−

−

VCE= −5V
V
V

CE
CE

= −3V
= −2V

V
V
V

µA
µA

mV

−

MHz

pF

ns
ns
ns

Ta=25°C

Fig.2 DC Current Gain vs.

Collector Current (Ι)

IC / IB=10 / 1

C

= −1mA

I
I

C

= −100µA

E

= −100µA

I
V

CB

= −40V

EB

= −4V

V
I

C

= −1.0A

I

B

= −100mA

V

CE

= −2V

C

= −100mA

I
V

CE

= −10V

I

E

=100mA

f=10MHz

CB

= −10V

V
I

E

=0mA

f=1MHz
I

C

= −2.0A
IB1= −200mA
IB2=200mA
V

CC

−25V

−10−1

∗

∗

1000

FE

100

Ta=125°C
Ta=25°C
Ta= −40°C

10

DC CURRENT GAIN : h

1

−0.001 −0.01 −0.1

COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

−10

2SA2093

VCE= −2V

−10−1

IC / IB=10 / 1

−1

(V)

CE (sat)

−0.1

COLLECTOR SATURATION

VOLTAGE : V

−0.01

IC / IB=20/1

C

/ IB=10/1

I

−0.001 −0.01 −0.1 −10−1

COLLECTOR CURRENT : IC (A)

Fig.4

Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)

−1

(V)

CE (sat)

COLLECTOR SATURATION

VOLTAGE : V

−0.01

Ta=125°C
Ta=25°C
Ta= −40°C

−0.1

−0.001 −0.01 −0.1 −10−1

COLLECTOR CURRENT : IC (A)

Fig.5

Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)

−1

(V)

BE (sat)

−0.1

BASE EMITTER SATURATION

VOLTAGE : V

−0.01

−0.001 −0.01 −0.1 −10−1

COLLECTOR CURRENT : IC (A)

Ta=125°C
Ta=25°C
Ta= −40°C

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Current

Rev.A 2/3