ROHM 2SA2092 Schematic [ru]
2SA2092
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Transistors
-1A / -60V Bipolar transistor
2SA2092
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Applications
High-speed switching, low frequency amplification
Feature
1) High speed switching. (tf : Ty p. : 30ns at IC = -1A)
2) Low saturation voltage.
(Typ. : 200mV
at I
C =
500mA, IB = 50mA)
3) Strong discharge resistance for inductive load and
capacitance load.
4) Low switching noise.
Structure
PNP epitaxial planar sili con transistor
z
Absolute maximum ratings (T a=25qC) zPackaging specifications
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
PULSE
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land
Symbol
CBO
V
V
CEO
EBO
V
I
C
I
CP
P
C
Tj
Tstg
∗
1
∗
2
Limits Unit
−60
−60
−6
−1
−2
500
150
−55 to +150
External dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.6
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
V
V
V
A
A
mW
°C
°C
Part No.
2SA2092
z
h
FE rank
0.950.95
1.9
Abbreviated symbol : VN
Packaging type
Code
Basic ordering unit (pieces)
Q
120-270
1.0MAX
0.85
0.7
2.8
0
~
0.1
0.6
~
0.16
Each lead has same dimensions
0.3
TSMT3Package
Taping
3000
TL
z
Electrical characteristics (Ta=25 qC)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Pulse measurement
∗2 See switching test circuit
FE
rank
∗3 h
BV
BV
BV
V
Min.
CEO
−60 −−
CBO
−60
−6
EBO
I
CBO
I
EBO
CE(sat)
h
Cob
ton
tstg
−
−
−
∗3
120
FE
∗1
−
f
T
−
−
−
∗2
tf
−
Typ. Max.
−−
−
−
−
−200
−−
300
15
30
100
30
−
−1.0
−1.0
−500
270
−
−
−
−
−
Unit
V
V
V
μA
μA
mV
MHz
pF
ns
ns
ns
I
C
=
−1mA
I
C
=
−100μA
E
=
−100μA
I
V
CB
=
V
EB
=
C
=
−500mA, I
I
CE
=
V
V
CE
=
CB
=
V
C
=
−1A,
I
B1
=
I
B2
=
100mA
I
∼
CC
V
−
−40V
−4V
−2V, I
−10V, I
−10V, I
−100mA
−25V
Conditions
B
=
−50mA
C
=
−100mA
E
=
100mA, f=10MHz
E
=0
, f=1MHz
1/3
2SA2092
z
Transistors
Electrical characteristics curve
10
(A)
C
1
125°C 25°C
0.1
COLLECTOR CURRENT : I
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
−40°C
VCE=2V
EB
(V)
200
1000μA
160
(mA)
C
120
80
40
COLLECTOR CURRENT : I
0
012 345
900μA
800μA
700μA
600μA
500μA
400μA
300μA
200μA
100μA
IB=0μA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Typical output characteristics
1000
125°C
100
−40°C
10
DC CURRENT GAIN : hFE
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current ( Ι )
25°C
VCE=2V
1000
100
10
DC CURRENT GAIN : hFE
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : I
CE
=3V
V
V
Ta=25°C
VCE=5V
CE
=2V
C
(A)
Fig.4 DC current gain vs. collector
current (ΙΙ)
10
1
(sat) (V)
BE
0.1
BASE EMITTER SATURATION
VOLTAGE : V
0.01
0.001 0.01 0.1 101
Fig.7 Base-emitter saturation voltage
−40°C
25°C
125°C
COLLECTOR CURRENT : IC (A)
vs. collector current
10
1
(sat)(V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
125°C
−40°C
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
IC/IB=10/1
1000
(MHz)
T
100
10
TRANSITION FREQUENCY : F
1
EMITTER CURRENT : I
Fig.8 Transition frequency
25°C
C
IC/IB=10/1
(A)
Ta=25°C
CE
V
E
(A
)
10
1
(sat)(V)
CE
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
101
0.001 0.10.01 101
IC/IB=20/1
IC/IB=10/1
COLLECTOR CURRENT : I
Fig.6 Collector-emitter saturation voltage
vs. collector current (ΙΙ)
1000
=10V
(pF)
100
10
COLLECOTR OUTPUT CAPACITACNE : Cob
EMITTER INPUT CAPACITANCE : Cib (pF)
1010.10.010.001
1
0.1 1 10 100
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Fig.9 Collector output capacitance
Emitter input capacitance
Cib
Cob
Ta=25°C
C
(A)
Ta=25°C
f=1MHz
BE
CE
(V)
(V)
2/3
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