ROHM 2SA2090 Schematic [ru]

2SA2090

Transistors

Medium power transistor (−60V, −0.5A)

2SA2090

zFeatures

1) High speed switching. (Tf : Typ. : 35ns

at IC = 500mA)

2) Low saturation voltage, typically.
(Typ. : −150mV

at IC =

−

100mA, IB = −10mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SC5868.

zApplications
High speed switching, Low noise

zStructure
PNP Silicon epitaxial planar

zPackaging Spec ifications

Taping

TL

3000

Type

2SA2090

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Storage temperature

∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.

Symbol

V

CBO

V

CEO

EBO

V

I

C

I

CP

P

C

Tj

Tstg

−55 to +150

zDimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

Limits Unit

−60

−60

−6

−0.5

−1.0

500
150

V
V
V
A
A

mW

°C
°C

Each lead has same dimensioins

Abbreviated symbol : VM

∗1

∗2

Rev.A 1/3

2SA2090

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage

Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

∗1 Measured using pulse current

zh

FE RANK

Q

120-270

zElectrical characteristic curves

100

80

(mA)

C

60

40

20

COLLECTOR CURRENT : I

IB=450µA

0

01 234 5

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Typical output characteristics

400µA

350µA

300µA

250µA
200µA

150µA

100µA

50µA

0µA

CE

(V)

BV

CEO

BVCBO
BV

EBO

ICBO

IEBO

VCE(sat)

FE

h

fT

Cob
Ton
Tstg

Tf

10

(A)

C

1

0.1

0.01

COLLECTOR CURRENT : I

0.001

0.1 1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Typ. Max.

Min.

−60 −−

−60

−6

120

−−

−

−

−

−

−

−

−

−

−

−

−

Single non repoetitive pulse

−1.0

−

−1.0

−300

−150

−−

270

400

10
35

100

60

−

−

−

−

−

100ms

DC

10

Fig.2 Safe operating area

Unit

V

I

C= −1mA

I

C= −100mA

V
V

I

E= −100µA

V

CB= −60V

µA

V

EB= −4V

µA

C= −100mA, IB= −10mA

I

mV

V

CE= −2V, IC= −50mA

MHz

V

CE= −10V, IE=100mA, f=10MHz

pF

V

CB= −10V, IE=0mA, f=1MHz

ns

I

C= −500mA,
B1= −50mA

I

ns

B2=50mA

I

ns

10ms

1ms

500µs

V

CC −25V

100

∼

−

Conditions

1000

100

SWITCHING TIME (ns)

10

0.01 0.1

COLLECTOR CURRENT : IC (A)

Fig.3 Switching Time

Tstg

Ton

∗1

∗1

Ta=25°C

CC

=25V

V

Tf

1

1000

Ta=100°C

Ta=−40°C

100

DC CURRENT GAIN : hFE

10

0.001 0.01 0.1 1

COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. collector

current ( Ι )

Ta=25°C

VCE=2V

1000

100

DC CURRENT GAIN : hFE

10

0.001 0.01 0.1 1
COLLECTOR CURRENT : I

Fig.5 DC current gain vs. collector

current (ΙΙ)

Ta=25°C

VCE=5V

CE

=2V

V

V

CE

=3V

C (A)

10

1

(sat)(V)

CE

125°C

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

0.001 0.01 0.1
COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation voltage

vs. collector current ( Ι )

−40°C

25°C

C

IC/IB=10/1

1

(A)

Rev.A 2/3