ROHM 2SA2073 Schematic [ru]
Transistors
2SA2073
High voltage discharge, High speed switching
,
Low Noise (−60V, −3A)
2SA2073
zFeatures
1) High speed switching. ( tf : Typ. : 20ns
at IC
2) Low saturation voltage, typically.
(Typ. : −200mV at IC =
−
2.0A, I
B
=
−
200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SC5826.
zApplications
High speed switching, Low noise
zStructure
PNP silicon epitaxial planar transistor
zPackaging specifications
Taping
TV2
2500
Type
2SA2073
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
t
j
t
stg
−
3A)
=
Limits Unit
−60
−60
−6
−3
−6
1.0
150
−55 to 150
zDimensions (Unit : mm)
ATV
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol : A2073
V
V
V
A
∗
A
W
°C
°C
Taping specifications
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Single pulse
∗2 See switching characteristics measurement circuits
zhFE RANK
Q
120−270
BV
BV
BV
I
I
V
CE (sat)
Cob
tstg
CBO
EBO
h
f
ton
FE
T
tf
CEO
CBO
EBO
−60
−60
−6
−
−
−
120
−
−
−
−
−
−
−
−
−
−
−200
−
200
40
20
130
20
−
−
−
−1.0
−1.0
−500
270
−
−
−
−
−
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
I
C
=
−1mA
C
=
−100µA
I
I
E
=
−100µA
V
CB
=
−40V
V
EB
=
−4V
I
C
=
−2.0A
I
B
=
−200mA
V
CE
=
−2V
I
C
=
−100mA
V
CE
=
−10V
I
E
=100mA
f=10MHz
V
CB
=
−10V
I
E
=0mA
f=1MHz
I
C
=
−3A
B1
=
−300mA
I
B2
=300mA
I
∼
CC
−25V
V
−
2SA2073
∗1
∗1
∗2
Rev.A 2/4
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