ROHM 2SA2072 User Manual

High voltage discharge, High speed switching,
Low Noise (−60V, −3A)

2SA2072

zFeatures zDimensions (Unit : mm)

−

CBO

CEO

EBO

I

C

CP

tj

3A)

=

CPT3
(SC-63)
<SOT-428>

(1) Base
(2) Collector
(3) Emitter

Abbreviated symbol : A2072

Limits Unit

−60

−60

−6

−3

∗1

C

−6

1.0

10.0
150

−55 to 150

∗2
∗3

V
V
V
A

A
W
W

°C
°C

1) High speed switching. ( tf : Typ. : 20ns

at IC

2) Low saturation voltage, typically.
(Typ. : −200mV at IC =

−

2.0A, I

B

=

−

200mA)

3) Strong discharge power for inductive load and capacitance load.

4) Low Noise.

5) Complements the 2SC5825.

zApplications
High speed switching, Low noise

zStructure
PNP silicon epitaxial planar transistor

zPackaging specifications

Taping

TL

2500

Type

2SA2072

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗1 Pw=100ms
∗2 Ta=25°C
∗3 Tc=25°C

DC
Pulsed

Symbol

V
V
V

I

P

tstg

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c

○

2009 ROHM Co., Ltd. All rights reserved.

1/3

2009.02 - Rev.B

V)

s

.5

)

n

0

1000

DC CURRENT GAIN : h

0

1000

DC CURRENT GAIN : h

)

0

1

)

e

0

1

)

e

2SA2072

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Condition

BV

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transistor frequency

Collector output capacitance

Turn-on time
Storage time
Fall time

∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits

zhFE RANK

Q

120−270

zElectrical characteristics curves

200

160

(mA)

C

120

80

40

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Typical output characteristic

125°C

FE

25°C

100

−40°C

10

IB=1000µA

900µA
800µA

700µA
600µA

500µA
400µA

300µA
200µA
100µA

0µA

Ta=25°C

512340

CE

(

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

∗1

V

CE (sat)

h

FE

∗1

f

T

Cob

∗2

ton

∗2

tstg

∗2

tf

(A)

C

COLLECTOR CURRENT : I

0.01

(V

CE(sat)

0.01

−60

−60

−6

−

−

−

120

−

−

−

−

−

10

1

0.1

0 0.1 0.2 0.3 0.4 0.50.6 0.7 0.80.9 1 1.1 1.2 1.31.4 1

BASE TO EMITTER VOLTAGE : VBE (V

−

−

−

−

−

−200

−

180

50

20

150

20

125°C

Fig.2 Grounded emitter propagatio
characteristics

0.1

Ic/Ib=20/1

Ic/Ib=10/1

25°C

−40°C

−

−

−

−1.0

−1.0

−500

270

−

−

−

−

−

VCE=2V

Ta=25

°C

V
V
V

µA
µA

mV

−

MHz

pF

ns
ns
ns

C

=

−1mA

I

C

=

−100µA

I
I

E

= −100µA

V

CB

= −20V

EB

= −4V

V
I

C

= −2A

I

B

= −0.2A

V

CE

= −2V

C

= −100mA

I

CE

= −10V

V

E

=100mA

I

=10MHz

f

CB

= −10V

V

E

=0mA

I

=1MHz

f

C

= −3A

I

B1

= −300mA

I

B2

=300mA

I

CC

−25V

V

FE

100

10

1

0.001 0.01 0.1 1

COLLECTOR CURRENT : I

Fig.3 DC current gain
vs.collector current ( Ι )

(V

CE(sat)

0.1

VCE=3V

IC/Ib

125°C

Ta=25

1

C

−40°C

Data Sheet

°C

VCE=5V

VCE=2V

(A)

=10/1

25°C

1

0.001 0.01 0.1 1

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○

2009 ROHM Co., Ltd. All rights reserved.

1

C

COLLECTOR CURRENT : I

(A)

Fig.4 DC current gain
vs.collector current ( ΙΙ

0.001

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

1

C

(A)

Fig.5 Collector-emitter saturation voltag
vs.collector current ( Ι )

2/3

0.01

0.001 0.01 0.1 1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

1

Fig.6 Collector-emitter saturation voltag
vs.collector current ( ΙΙ )

2009.02 - Rev.B