ROHM 2SA2071 User Manual

1

2

Power transistor (60V, 3A)

2SA2071

Features Dimensions (Unit : mm)

1) High speed switching. (Tf : Typ. : 20ns

at IC =

2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2A)

3) Strong discharge power for inductive load and capacitance load.

4) Complements the 2SC5824

Applications

Low Frequency Amplifier
High speed switching

Structure
PNP Silicon epitaxial planar transistor

Packaging specifications

Type

2SA2071

Package
Code
Basic ordering unit (pieces)

Taping

T100
1000

Absolute maximum ratings (Ta=25C)

C

Limits

−60

−60

−6

−3

−6

500

2.0

150

−55 to +150

Parameter Symbol

V

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Pw=100ms
∗2 Mounted on a 40×40×0.7 (mm) ceramic substrate

CBO

V

CEO

V

EBO

I

I

CP

P

Tj

Tstg

C



Unit

V
V
V
A
A

mW

W

°C
°C

3A)

MPT3

(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)

∗

∗

Abbreviated symbol : UN

Each lead has same dimensions

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2011.03 - Rev.C

0

SWITCHING TIME : (ns)

1000

0

DC CURRENT GAIN : h

1000

0

DC CURRENT GAIN : h

1000

0

n

COLLECTOR SATURATION

0

n

COLLECTOR SATURATION

nt

BASE EMITTER SATURATION

0

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage
DC current gain
Transition frequency

Collector output capacitance
Turn-on time
Storage time
Fall time

∗1 Non repetitive pulse
∗2 See switching charactaristics measurement cicuits

FE RANK

h

Q

120−270

Electrical characteristic curves

Ta=25°C

CC

= −25V

V

C/IB

=10/1

I

100

Tstg

Tf
Ton

CBO

BV

CEO

BV

EBO

CBO

I
I

EBO

CE (sat)

V

h

FE

f

T

Cob − 50 − pF
Ton − 20 − ns

Tstg − 150 − ns

Tf − 20 − ns

−60 −−VIC= −100μA
I

C

−60 −−V

−6 −−V

−−−1.0 μA

−−−1.0 μA

−−200 −500 mV

120 − 270 −

− 180 − MHz

FE

100

Ta=125°C
Ta=25°C
Ta= −40°C

10

= −1mA

I

E

= −100μA

CB

= −40V

V
V

EB

= −4V

C

= −2A, IB= −0.2A

I
V

CE

= −2V, IC= −100mA

V

CE

= −10V, IE=10mA, f=10MHz

CB

= −10V, IE=0mA, f=1MHz

V
I

C

= −3A

B1

= −300mA

I
I

B2

=300mA

CC

−25V

V

VCE= −2V

Data Sheet 2SA2071

∗1

∗1

∗2

FE

100

10

VCE= −5V
VCE= −3V
VCE= −2V

Ta=25°C

10

−0.01 −0.1 −1 −1
COLLECTOR CURRENT : IC (A)

Fig.1 Switching Time

−10

−1

(V)

Ta=125°C

CE (sat)

Ta=25°C
Ta= −40°C

−0.1

VOLTAGE : V

−0.01

−0.001 −0.01 −0.1 −1 −1

COLLECTOR CURRENT : IC (A)

Fig.4 Collector-Emitter Saturatio

Voltage vs.
Collector Current (Ι)

IC/IB=10/1

1

−0.001 −0.01 −0.1 −1 −1
COLLECTOR CURRENT : IC (A)

Fig.2 DC Current Gain vs.

Collector Current (Ι)

−10

−1

(V)

IC/IB=20/1

CE (sat)

IC/IB=10/1

−0.1

VOLTAGE : V

−0.01

−0.001 −0.01 −0.1 −1 −1

COLLECTOR CURRENT : IC (A)

Ta=25°C

Fig.5 Collector-Emitter Saturatio

Voltage vs.

1

−0.001 −0.01 −0.1 −1 −1
COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

−10

−1

(V)

BE (sat)

Ta= −40°C
Ta=25°C

−0.1
Ta=125°C

VOLTAGE : V

−0.01

−0.001 −0.01 −0.1 −1 −1

COLLECTOR CURRENT : IC (A)

IC/IB=10/1

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Curre

Collector Current (ΙΙ)

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2011 ROHM Co., Ltd. All rights reserved.

2011.03 - Rev.C