ROHM 2SA2018, 2SA2030, 2SA2119K Technical data

2SA2018 / 2SA2030 / 2SA2119K

Transistors

Low frequency transistor

2SA2018 / 2SA2030 / 2SA2119K

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

zApplications

For switching, for muting.

zFeatures

1)A collector current is large.

2)Collector saturation voltage is low.

VCE (sat) ≤250mA

At IC = −200mA / IB = −10mA

zAbsolute maximum ratings (Ta=25°C)

	Parameter	Symbol		Limits	Unit
	Collector-base voltage	VCBO		−15	V
	Collector-emitter voltage	VCEO		−12	V
	Emitter-base voltage	VEBO		−6	V
	Collector current		IC	−500	mA
		ICP		−1	A
			VMT3	150
	Collector power dissipation	PC	EMT3		mW
			SMT3	200
	Junction temperature		Tj	150	°C
	Storage temperature	Tstg		−55 to +150	°C

Single pulse, Pw=1ms

zDimensions (Unit : mm)

2SA2018

Each lead has same dimensions

ROHM : EMT3

Abbreviated symbol : BW (1)

Emitter

EIAJ : SC-75A

(2)

Base

JEDEC : SOT-416

(3)

Collector

2SA2030

Each lead has same dimensions

ROHM : VMT3

Abbreviated symbol : BW (1)

Base

(2)

Emitter

(3)

Collector

	2.9	1.1
2SA2119K	0.4	0.8
	(3)

						2.8
				1.6
	(2)		(1)										0.3Min.
	0.95	0.95				0.15
	1.9
								Each lead has same dimensions
ROHM : SMT3	Abbreviated symbol : BW (1) Emitter
EIAJ : SC-59													(2) Base
JEDEC : SOT-346													(3) Collector

zElectrical characteristics (Ta=25°C)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	−15	−	−	V	IC= −10µA
Collector-emitter breakdown voltage	BVCEO	−12	−	−	V	IC= −1mA
Emitter-base breakdown voltage	BVEBO	−6	−	−	V	IE= −10µA
Collector cutoff current	ICBO	−	−	−100	nA	VCB= −15V
Emitter cutoff current	IEBO	−	−	−100	nA	VEB= −6V
DC current transfer ratio	hFE	270	−	680	−	VCE= −2V / IC= −10mA
Collector-emitter saturation voltage	VCE (sat)	−	−100	−250	mV	IC= −200mA / IB= −10mA
Transition frequency	fT	−	260	−	MHz	VCE= −2V, IE=10mA, fT=100MHz
Output capacitance	Cob	−	6.5	−	pF	VCB= −10V, IE=0A, f=1MHz

Rev.C 1/2

2SA2018 / 2SA2030 / 2SA2119K

Transistors

zPackaging specifications and hFE

		Package name		Taping
Type		Code	T146	TL	T2L
	hFE	Basic ordering unit (pieces)	3000	3000	8000
2SA2119K				−	−
2SA2018			−		−
2SA2030			−	−

zElectrical characteristic curves

	1000			VCE=2V		200	IB=700µA
	500					180				IB=600µA
(mA)					(mA)
	200					160				IB=500µA
C		Ta=125°C
I					CI
CURRENTCOLLECTOR:	100	Ta=25°C			CURRENTCOLLECTOR:	140				IB=400µA
		Ta= −40°C
						120
	50
						100				IB=300µA
	20					80
	10					60				IB=200µA
	5					40
									IB=100µA
	2					20					°C
										Ta=25
	1					0			IB=0µA	pulsed
	0	0.5	1.0	1.5		0	0.2 0.4 0.6 0.8	1	1.2 1.4 1.6		1.8	2
	BASE TO EMITTER VOLTAGE : VBE (V)					COLLECTOR TO EMITTER VOLTAGE : VCE (V)

	1000						VCE=2V
	500
FE	200
: h
	100		Ta=125°C
GAIN
			Ta=25°C
	50		Ta= −40°C
CURRENT	20
	10
	5
DC
	2
	1	2	5	10	20	50	100 200	500 1000
	1

COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded Emitter Propagation Fig.2 Typical Output Characteristics

Fig.3 DC Current Gain vs.

Characteristics

Collector Current

		1000						IC / IB=20				1000						Ta=25°C		(mV)	10000						IC / IB=20
		500										500									5000
																				(sat)
COLLECTOR SATURATION										COLLECTOR SATURATION													Ta= −40°C
	VOLTAGE : VCE (sat) (mV)	200										200								BE	2000		Ta=25°C
		100									VOLTAGE : VCE (sat) (mV)	100								SATURATION VOLTAGE : V	1000		Ta=125°C
				Ta=125°C
		50		Ta=25°C								50		IC / IB=50							500
				Ta= −40°C
		20										20	IC / IB=20								200
		10										10	IC / IB=10								100
		5										5									50
		2										2									20
		1																			10
			2	5	10	20	50	100 200	500 1000			1	2	5	10	20	50	100 200	500 1000	BASER		2	5	10	20	50	100 200	500 1000
		1										1									1
			COLLECTOR CURRENT : IC (mA)										COLLECTOR CURRENT : IC (mA)									COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-Emitter Saturation

Voltage vs.

Collector Current (Ι)

	1000
(MHz)																				VCE=2V
T	500																			Ta=25°C
	200
f
:
FREQUENCY	100
	50
	20
TRANSITION	10
	5
	2
	1
		2			5		10				20			50		100 200					500 1000
	1

EMITTER CURRENT : IC (mA)

EMITTER INPUT CAPACITANCE : Cib (pF)

	Fig.5 Collector-Emitter Saturation																										Fig.6 Base-Emitter Saturation
			Voltage vs.																								Voltage vs.Collecter Current
(pF)			Collector Current (ΙΙ)
	1000																			IE=0A
Cob:																				Ta=25°C
CAPACITANCE	500																			f=1MHz
	200
	100
	50
OUTPUT	20												Cib
	5
	10
COLLECTOR	2																Cob
	1
	0.1	0.2			0.5				1	2			5			10			20			50			100

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.7 Gain Bandwidth Product vs.	Fig.8 Collector Output Capacitance vs.
Emitter Current	Collector-Base Voltage
	Emitter Input Capacitance vs.
	Emitter-Base Voltage

Rev.C 2/2