ROHM 2SA2018, 2SA2030, 2SA2119K Technical data

2SA2018 / 2SA2030 / 2SA2119K

Transistors

Low frequency transistor

2SA2018 / 2SA2030 / 2SA21 19K

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

zApplications

For switching, for muting.

zFeatures

1) A collector current is large.

2) Collector saturation voltage is low.
V

CE (sat) ≤ 250mA

At I

C = −200mA / IB = −10mA

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature
Storage temperature

∗Single pulse, Pw=1ms

V

CBO

V

CEO

V

EBO

I

C

I

CP

VMT3

P

EMT3

C

SMT3 200

Tj 150

Tstg

Limits

−15

−12

−6V

−500

−1

150

−55 to +150

Unit

V
V

mA

A

mW

°C
°C

zElectrical characteristics (Ta=25°C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cutoff current I

DC current transfer ratio h
Collector-emitter saturation voltage V
Transition frequency f
Output capacitance Cob − 6.5 − pF

Symbol Min. Typ. Max. Unit Conditions

BV

−15 −−VIC= −10µA

CBO

−12 −−V

CEO

−6 −−V

EBO

−−−100 nA

CBO

−−−100 nA

EBO

270 − 680 −

FE

CE (sat)

−−100 −250 mV

− 260 − MHz

T

zDimensions (Unit : mm)

2SA2018

ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416

2SA2030

ROHM : VMT3

2SA2119K

∗

ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346

I

= −1mA

C

I

= −10µA

E

V

= −15V

CB

V

= −6VEmitter cutoff current I

EB

= −2V / IC= −10mA

V

CE

= −200mA / IB= −10mA

I

C

= −2V, IE=10mA, fT=100MHz

V

CE

= −10V, IE=0A, f=1MHz

V

CB

Each lead has same dimensions

Abbreviated symbol : BW

Each lead has same dimensions

Abbreviated symbol : BW

2.9

0.4

(3)

(2)

0.95 0.95

1.9

Abbreviated symbol : BW

1.1

0.8

1.6

2.8

(1)

0.15

Each lead has same dimensions

(1) Emitter
(2) Base
(3) Collector

(1) Base
(2) Emitter
(3) Collector

0.3Min.

(1) Emitter
(2) Base
(3) Collector

Rev.C 1/2

2SA2018 / 2SA2030 / 2SA2119K

Transistors

zPackaging specifications and hFE

Package name

Type

Code

h

Basic ordering unit (pieces)

FE

2SA2119K
2SA2018
2SA2030

zElectrical characteristic curves

1000

500

(mA)

200

C

Ta=125°C
Ta=25°C

100

Ta= −40°C

50

20
10

5

2

COLLECTOR CURRENT : I

1

0 0.5 1.0 1.5

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded Emitter Propagation

Characteristics

1000

500

200
100

Ta=125°C

(mV)

Ta=25°C

50

Ta= −40°C

CE (sat)

20
10

5

COLLECTOR SATURATION

VOLTAGE : V

2
1

1 2 5 10 20 50 100 200 5001000

COLLECTOR CURRENT : I

Fig.4 Collector-Emitter Saturation

Voltage vs.
Collector Current (Ι)

1000

500

(MHz)

T

200
100

50

20
10

5

2

TRANSITION FREQUENCY : f

1

1 2 5 10 20 50 100 200 5001000

EMITTER CURRENT : I

Fig.7 Gain Bandwidth Product vs.

Emitter Current

VCE=2V

VCE=2V
Ta=25°C

(mA)

C

(V)

BE

IC / IB=20

(mA)

C

T146
3000

−

−−

(mA)

C

COLLECTOR CURRENT : I

COLLECTOR SATURATION



Cib (pF)

EMITTER INPUT CAPACITANCE :

Fig.8 Collector Output Capacitance vs.

Taping

TL

3000

−

T2L

8000

−

−

200
180
160
140
120
100

80
60
40
20

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Typical Output Characteristics

1000

500

200
100

(mV)

50

CE (sat)

20

IC / IB=10

10

5

VOLTAGE : V

2
1

1 2 5 10 20 50 100 200 5001000

Fig.5 Collector-Emitter Saturation

1000

500

Cob (pF)

200
100

50

20
10

5

2
1

0.1 0.2 0.5 1 2 5 10 20 50 100

COLLECTOR OUTPUT CAPACITANCE :

EMITTER TO BASE VOLTAGE : V

Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage

I

=700µA

B

IB=100µA

IB=0µA

IC / IB=50

IC / IB=20

COLLECTOR CURRENT : I

Voltage vs.
Collector Current (ΙΙ)

Cib

Cob

IB=600µA

I

=500µA

B

IB=400µA

IB=300µA

IB=200µA

Ta=25
pulsed

Ta=25°C

(mA)

C

IE=0A
f=1MHz
Ta=25°C

EB

1000

500

FE

200

Ta=125°C

100

Ta=25°C
Ta= −40°C

50

20
10

5

°C

CE

DC CURRENT GAIN : h

(V)

2
1

1 2 5 10 20 50 100 200 5001000

COLLECTOR CURRENT : I

Fig.3 DC Current Gain vs.

10000

(mV)

5000

BE (sat)

2000
1000

BASER SATURATION VOLTAGE : V

Ta= −40°C
Ta=25°C
Ta=125°C

500

200
100

50

20
10

1 2 5 10 20 50 100 200 5001000

COLLECTOR CURRENT : I

Fig.6 Base-Emitter Saturation

Voltage vs.Collecter Current

(V)

Collector Current

VCE=2V

(mA)

C

IC / IB=20

(mA)

C

Rev.C 2/2

Appendix

Notes

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0