Datasheet 2SA1834 Datasheet (ROHM)

Transistors

Low VCE(sat) Transistor (Strobe flash)
(−20V, −10A)

2SA1834

zFeatures

1) Low saturation voltage,
typically V

CE(sat) = −0.16V at IC / IB= −4A / −50mA.

2) High current capacity, typically I
operation and –15A for 10ms pulse.

3) Complements the 2SC5001.

z

Packaging specifications and h

Basic ordering unit (pieces)

Type 2SA1834

Package

FE

h

Code

z

Absolute maximum ratings

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Base current
Collector power dissipation
Junction temperature

Storage temperature

Single pulse Pw=10ms

∗

Parameter Symbol

z

Electrical characteristics

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage

DC current transfer ratio
Transition frequency

Output capacitance

Measured using pulse current.

∗

(T a=25°C)

C= –10A for DC

FE

CPT3

RS
TL

2500

(T a=25°C)

CBO

V
V

CEO

V

EBO

I

C

I

CP

B

I

P

C

Tj

Tstg

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)
BE(sat)

V

h

FE1

h

FE2

f

T

Cob

z

External dimentions

CPT3

Limits

−30

−20

−6

−10

−15 A

−2A

1

10

150

−55 to +150

−30

−20

−6

−

−

−

−0.16

−−0.9 −1.2 V IC/IB=−4A/−0.05A

180 − 560 − VCE=−2V , IC=−0.5A

82

−

−

150
220

−

−

−

−

−

−

(1)Base
(2)Collector
(3)Emitter

Unit

V
V
V
A

W

W(Tc=25

°C
°C

−

−

−

−1

−1

−0.25

−

−

−

∗

°C

)

V
V
V

µA
µA

V

−

MHz

pF

(Unit : mm)

6.5

5.1

1.5

5.5

0.75

0.9

C

=−50µA

I
I

C

=−1mA

I

E

=−50µA

CB

=−20V

V

EB

=−5V

V
I

C/IB

=−4A/−0.05A

V

CE

=−2V , IC=−4A

VCE=−5V , IE=1.5A , f=50MHz

CB

=−10V , IE=0A , f=1MHz

V

0.9

0.65

2.3

(1)

2.3

(3)

(2)

2SA1834

2.3

0.5

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗
∗
∗
∗

Rev.A 1/3

2SA1834

Transistors

z

Electrical characteristics

−10

−5

Ta=150

(A)

−2

C

−1

−500m

−200m

−100m

−50m

−20m

−10m

COLLECTOR CURRENT : I

−5m

−2m

−1m

Fig.1 Ground emitter propagation

°C

25

°C

−55

°C

−0.4 −0.6 −0.8 −1.0 −1.2−0.20

BASE TO EMITTER VOLTAGE : VBE (V)

characteristics

−1000

(mV)

−500

CE(sat)

−200

−100

−50

IC/IB=80

−20

40

−10

20

−5

−2

−1

COLLECTOR SATURATION VOLTAGE : V

−10m −20m −50m −100m −200m −500m
COLLECTOR CURRENT : IC (A)

Fig.4 Collector-emitter saturation voltage

vs. collector current ( Ι )

1000

1000

500

500

(MHz)

(MHz)

T

T

200

200

100

100

50

50

20

20

10

10

TRANSITION FREQUENCY : f

TRANSITION FREQUENCY : f

5

5

5m 10m 20m 50m 100m 200m 500m

5m 10m 20m 50m 100m 200m 500m

EMITTER CURRENT : IE (A)

EMITTER CURRENT : IE (A)

Fig.7 Gain bandwidth product
vs. emitter current

Rev.A 2/3

(T a=25°C)

V

CE

= −2V

Ta

=25

−1 −2 −5

Ta=25

f=50MHz

VCE= −5V

12 5 10

12 5 10

10000

5000

2000

−1.4

DC CURRENT GAIN : hEF

1000

500

200
100

50
20

10

−20m

50m

VCE= −5V

−2V

−1V

−100m −200m −500m

COLLECTOR CURRENT : IC (A)

−1 −2 −5 −10 −20−

Fig.2 DC current gain vs. collector current( Ι )

−1000

°C

−10 −20

IC/IB=80

(mV)

−500

CE(sat)

−200

−100

−50

−20

−10

−5

−2

−1

COLLECTOR SATURATION VOLTAGE : V

−20m −50m −100m −200m −500m
COLLECTOR CURRENT : IC (A)

Fig.5

Collector-emitter saturation voltage

vs. collector current

150

°C

Ta= −55

25

°C

−1 −2 −5

( ΙΙ )

°C

10000

5000

2000
1000

500

200
100

50

20
10

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR TO BASE VOLTAGE : V

Fig.8 Collector output capacitance
vs. collector-base voltage

Ta=25

°C

°C

−10 −20

Ta=25°C

f=1MHz

IE=0A

CB

10000

5000

2000

EF

1000

Ta

=150

500

200
100

50

DC CURRENT GAIN : h

20
10

−20m

°C

25°C

−55°C

50m

−100m −200m −500m

COLLECTOR CURRENT : IC (A)

VCE= −2V

−1 −2 −5 −10 −20−

Fig.3 DC current gain vs.collector current ( ΙΙ )

−10

(mV)

−5

BE(sat)

−500m

−200m

−100m

−50m

−20m

−10m

BASE SATURATION VOLTAGE : V

Fig.6 Base-emitter saturation voltage
vs. collector current

10000

EMITTER INPUT CAPACITANCE : Cib (pF)

(V)

Ta=−55°C

−2

−1

−20m −50m −100m −200m −500m

5000

2000
1000

500

200
100

50

20
10

−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50

Fig.9 Emitter input capacitance
vs. emitter-base voltage

25°C

150°C

COLLECTOR CURRENT : IC (A)

EMITTER TO BASE VOLTAGE : V

−1 −2 −5

IC/IB=80

−10 −20

Ta=25°C

f=1MHz

IC=0A

EB

(V)

2SA1834

Transistors

100

50
20

(A)

10

C

5
2

1

500m
200m

100m

Ta=25°C

50m

∗Single

COLLECTOR CURRENT : I

nonrepetitive

20m

pulse

10m

0.01 0.02 0.05 0.1 0.2 0.5
COLLECTOR TO EMITTER VOLTAGE : V

Pw=10ms

DC

1 2 5 10 20 50 100

Fig.10 Safe operating area

100ms

CE

(V)

Rev.A 3/3

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1