ROHM 2SA1834 User Manual
Transistors
Low VCE(sat) Transistor (Strobe flash)
(−20V, −10A)
2SA1834
zFeatures
1) Low saturation voltage,
typically V
CE(sat) = −0.16V at IC / IB= −4A / −50mA.
2) High current capacity, typically I
operation and –15A for 10ms pulse.
3) Complements the 2SC5001.
z
Packaging specifications and h
Basic ordering unit (pieces)
Type 2SA1834
Package
FE
h
Code
z
Absolute maximum ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse Pw=10ms
∗
Parameter Symbol
z
Electrical characteristics
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
∗
(T a=25°C)
C= –10A for DC
FE
CPT3
RS
TL
2500
(T a=25°C)
CBO
V
V
CEO
V
EBO
I
C
I
CP
B
I
P
C
Tj
Tstg
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
BE(sat)
V
h
FE1
h
FE2
f
T
Cob
z
External dimentions
CPT3
Limits
−30
−20
−6
−10
−15 A
−2A
1
10
150
−55 to +150
−30
−20
−6
−
−
−
−0.16
−−0.9 −1.2 V IC/IB=−4A/−0.05A
180 − 560 − VCE=−2V , IC=−0.5A
82
−
−
150
220
−
−
−
−
−
−
(1)Base
(2)Collector
(3)Emitter
Unit
V
V
V
A
W
W(Tc=25
°C
°C
−
−
−
−1
−1
−0.25
−
−
−
∗
°C
)
V
V
V
µA
µA
V
−
MHz
pF
(Unit : mm)
6.5
5.1
1.5
5.5
0.75
0.9
C
=−50µA
I
I
C
=−1mA
I
E
=−50µA
CB
=−20V
V
EB
=−5V
V
I
C/IB
=−4A/−0.05A
V
CE
=−2V , IC=−4A
VCE=−5V , IE=1.5A , f=50MHz
CB
=−10V , IE=0A , f=1MHz
V
0.9
0.65
2.3
(1)
2.3
(3)
(2)
2SA1834
2.3
0.5
9.5
1.5
2.5
0.8Min.
0.5
1.0
∗
∗
∗
∗
Rev.A 1/3
2SA1834
Transistors
z
Electrical characteristics
−10
−5
Ta=150
(A)
−2
C
−1
−500m
−200m
−100m
−50m
−20m
−10m
COLLECTOR CURRENT : I
−5m
−2m
−1m
Fig.1 Ground emitter propagation
°C
25
°C
−55
°C
−0.4 −0.6 −0.8 −1.0 −1.2−0.20
BASE TO EMITTER VOLTAGE : VBE (V)
characteristics
−1000
(mV)
−500
CE(sat)
−200
−100
−50
IC/IB=80
−20
40
−10
20
−5
−2
−1
COLLECTOR SATURATION VOLTAGE : V
−10m −20m −50m −100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
1000
500
500
(MHz)
(MHz)
T
T
200
200
100
100
50
50
20
20
10
10
TRANSITION FREQUENCY : f
TRANSITION FREQUENCY : f
5
5
5m 10m 20m 50m 100m 200m 500m
5m 10m 20m 50m 100m 200m 500m
EMITTER CURRENT : IE (A)
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
Rev.A 2/3
(T a=25°C)
V
CE
= −2V
Ta
=25
−1 −2 −5
Ta=25
f=50MHz
VCE= −5V
12 5 10
12 5 10
10000
5000
2000
−1.4
DC CURRENT GAIN : hEF
1000
500
200
100
50
20
10
−20m
50m
VCE= −5V
−2V
−1V
−100m −200m −500m
COLLECTOR CURRENT : IC (A)
−1 −2 −5 −10 −20−
Fig.2 DC current gain vs. collector current( Ι )
−1000
°C
−10 −20
IC/IB=80
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−1
COLLECTOR SATURATION VOLTAGE : V
−20m −50m −100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-emitter saturation voltage
vs. collector current
150
°C
Ta= −55
25
°C
−1 −2 −5
( ΙΙ )
°C
10000
5000
2000
1000
500
200
100
50
20
10
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR TO BASE VOLTAGE : V
Fig.8 Collector output capacitance
vs. collector-base voltage
Ta=25
°C
°C
−10 −20
Ta=25°C
f=1MHz
IE=0A
CB
10000
5000
2000
EF
1000
Ta
=150
500
200
100
50
DC CURRENT GAIN : h
20
10
−20m
°C
25°C
−55°C
50m
−100m −200m −500m
COLLECTOR CURRENT : IC (A)
VCE= −2V
−1 −2 −5 −10 −20−
Fig.3 DC current gain vs.collector current ( ΙΙ )
−10
(mV)
−5
BE(sat)
−500m
−200m
−100m
−50m
−20m
−10m
BASE SATURATION VOLTAGE : V
Fig.6 Base-emitter saturation voltage
vs. collector current
10000
EMITTER INPUT CAPACITANCE : Cib (pF)
(V)
Ta=−55°C
−2
−1
−20m −50m −100m −200m −500m
5000
2000
1000
500
200
100
50
20
10
−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
Fig.9 Emitter input capacitance
vs. emitter-base voltage
25°C
150°C
COLLECTOR CURRENT : IC (A)
EMITTER TO BASE VOLTAGE : V
−1 −2 −5
IC/IB=80
−10 −20
Ta=25°C
f=1MHz
IC=0A
EB
(V)
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