ROHM 2SA1797 Schematic [ru]

2SA1797

B

C
C
E

C

C
d

J
S

Transistors

Power Transistor (−50V, −3A)

2SA1797

zFeatures zExternal dimensions (Unit : mm)

1) Low saturation voltage.
V

CE (sat)

= −0.35V (Max.) at IC / IB = −1A / −50mA.

2) Excellent DC current gain characteristics.

3) Complements the 2SC4672.

zPackaging specifications

Type 2SA1797

Package

h

FE

Marking

Code

asic ordering unit (pieces)

∗Denotes h

FE

MPT3

PQ

AG
T100
1000

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

ollector-base voltage
ollector-emitter voltage

mitter-base voltage
ollector current

ollector power

issipation

2SA1797

unction temperature

torage temperature

∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.

+

+

CBO

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

−50

−50

−6

−3

−6

0.5
2

150

−55~+150

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio

Transition frequency
Output capacitance

∗ Measured using pulse current

BV
BV
BV

I
I

V

CE(sat)

Cob

CBO
EBO

h

f

CBO
CEO
EBO

FE

T

−50

−50

−6

−

−

−

82

−

−

−

−

−

−

−

−0.15

−

200

36

Unit

V
V
V

A (DC)

A (Pulse)

W

°C
°C

−0.1

−0.1

−0.35

270

MPT3

(1)Base
(2)Collector
(3)Emitter

∗

1

∗

2

−

−

−

−

−

V
V
V

µA
µA

V

−

MHz

pF

4.5

(1)

I

C

=−50µA

C

=−1mA

I

E

=−50µA

I
V

CB

=−50V

EB

=−5V

V

1.6

0.5

3.0

0.5

2.5

4.0

(3)(2)

1.0

0.40.4

1.51.5

IC/IB=−1A/−50mA

CE/IC

=−2V/−0.5A

V

CE

=−2V, IE=0.5A, f=100MHz

V
V

CB

=−10V, IE=0A, f=1MHz

Rev.B 1/2

1.5

0.4

∗

∗

Transistors

)

n

0

0

)

n
nt

)

z Electrical characteristic curves

2.0

Ta=25°C

1.8

(A)

C

1.6

1.4

1.2
1

CURRENT : l

800m
600m
400m

COLLECTOR

200m

0

010678945231

B

l

=10mA

9mA

8mA

COLLECTOR TO EMITTER VOLTAGE

Fig.1 Grounded emitter output

characteristics

(V

-

CE (sat)

-

-

1

0.5

0.2

7mA

6mA

5mA

4mA

3mA
2mA

1mA

: VCE (V

−10

−5

A)

m

−2

(

C

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−5m

COLLECTOR CURRENT : I

−2m

−1m

BASE TO EMITTER VOLTAGE : V

Ta=100°C

Ta=25°C

Ta=−40°C

−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.40

Fig.2 Grounded emitter propagatio

characteristics

lC/lB=20

(A)

C

VCE=2V

BE

10

1

(V)

5000

2000

FE

1000

500

200
100

50

DC CURRENT GAIN : h

20
10

5

-1m-5m-

-2m-

0.01-0.05-0.2-1

COLLECTOR CURRENT : IC (A)

Fig.3 DC current gain vs.

10ms

100ms

2SA1797

VCE=2V

°C

Ta=100

Ta=25

°C

°C

Ta=−40

0.02-0.1-0.5-2-5-1

collector current

1ms

°C

-

0.1

-

0.05

-

0.02

-

0.01

-1m-5m-

-2m-

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Ta=100

Ta=25

°C

°C

Ta=−40

0.02-0.1-0.5-2-5-1

0.01-0.05-0.2-1

Fig.4 Collector-emitter saturatio

voltage vs. collector curre

0.1

0.01

Ta=25°C
Single non repetitive pulse

COLLECTOR CURRENT : l

Mounted on epoxy board
12mm×15mm×

0.001

0.1

DC

t

0.8mm

1

10

COLLECTOR TO EMITTER VOLTAGE : VCE (V

Fig.5 Safe operating area

100

Rev.B 2/2