ROHM 2SA1774EB Schematic [ru]
General Purpose Transistor (50V, 0.15A)
2SA1774EB
zApplications zDimensions (Unit : mm)
General purpose small signal amplifier.
zFeatures
1) Excellent h
FE linearity.
2) Complements the 2SC4617EB.
zStructure
PNP silicon epitaxial.
planar transistor.
zAbsolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
zElectrical characteristics (Ta=25°C)
Parameter Symbol
CEO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
f
CBO
EBO
T
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
C
∗1
I
CP
∗2
P
D
Tj
Tstg
Min.
Typ. Max. Unit Conditions
−50
−60
−6
FE
82
−
−
−
−
−
−
−
−
−100
−
−
−100
−
−
−0.5
−
560
−
140
−
4.0
−
5.0
EMT3F
(1) Base
(2) Emitter
(3) Collector
∗ = Denotes h
−60 V
−50
−6
−150I
−200
150
150
−55 to +150
C
=−1mA
VI
V
C
=−50µA
I
V
E
=−50µA
I
nA
nA
MHz
pF
CB
V
V
EB
=−6V
V
I
C/IB
CE
−
V
V
CE
V
CE
1.6
0.26
(3)
0.37
1.6
0.86
(1) (2)
0.37
0.5 0.5
1.0
Abbreviated symbol : F
FE
V
V
mA
mW
°C
°C
=−60V
=−50mA/−5mA
=−6V, IC=−1mA
=−12V, IE=2mA, f=100MHz
=−12V, IE=0A, f=1MHz
0.7
0.13
Each lead has same dimensions
∗
0.45
0.45
www.rohm.com
1/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
mA)
)
characteristics (I)
.0
)
5
)
500
0
DC CURRENT GAIN : h
500
0
DC CURRENT GAIN : h
I)
0
)
voltage vs. collector current (II)
0
0
1000
.
)
20
h
FE rank categories
Rank P Q R
h
FE
zElectrical characterristic curves
−50
−20
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic (
−0.2
−0.1
−0.2
Fig.1 Grounded emitter propagation
FE
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
Fig.4 DC current gain vs.
−1
V)
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR SATURATION VOLTAGE : V
Fig.7 Collector-emitter saturation
82 to 180 120 to 270 180 to 390
Ta=100˚C
25˚C
−40˚C
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (
characteristics
Ta=25˚C
COLLECTOR CURRENT : IC (
VCE= −5V
−3V
−1V
collector current (I)
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (
VCE= −6V
mA)
lC/lB=10
mA)
Data Sheet 2SA1774EB
S
270 to 560
−10
mA)
(
C
COLLECTOR CURRENT : I
V
FE
200
100
50
500
MHz)
(
T
200
100
TRANSITION FREQUENCY : f
Ta=25˚C
−8
−6
−4
−2
−0.4
−0.8 −1.6 −2
COLLECTOR TO MITTER VOLTAGE : VCE (
Fig.2 Grounded emitter output
Ta=100˚C
25˚C
−40˚C
−0.2 −0.5 −1 −2 −5 −10 −20 −50−10
COLLECTOR CURRENT : IC (
Fig.5 DC current gain vs.
collector current (II)
50
0.5 20
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
I
B
−1.20
=0
VCE= −6V
mA)
Ta=25˚C
V
CE
= −12V
50 10
E
(
mA)
−100
Ta=25˚C
)
−500
mA
(
−450
−80
C
−400
−350
−300
−60
−40
−20
COLLECTOR CURRENT : I
0
V
COLLECTOR TO EMITTER VOLTAGE : VCE (
−250
−200
−150
−100
−50µA
−3 −4−2−1
IB=0
−
V
Fig.3 Grounded emitter output
V
(
CE(sat)
−0.5
−0.2
−0.1
−0.05
COLLECTOR SATURATION VOLTAGE : V
characteristics (II)
−1
IC/IB=
50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR CURRENT : IC (
Ta=25˚C
mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
pF)
pF)
10
5
2
−0.5 −20
−1 −2 −5 −10
COLLECTOR TO BASE VOLTAGE : VCB (V
COLLECTOR OUTPUT CAPACITANCE : Cob (
EMITTER INPUT CAPACITANCE : Cib (
EMITTER TO BASE VOLTAGE : VEB (V)
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
Fig.9 Collector output capacitance vs
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
www.rohm.com
2/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
Loading...