ROHM 2SA1759 Schematic [ru]

Transistors

1

High-voltage Switching Transistor

2SA1759

(Camera strobes and Telephone, Power supply)
(−400V, −0.1A)

2SA1759

zFeatures

1) High breakdown voltage. (BV

CEO

= −400V)

2) Low saturation voltage,
typically V

CE (sat)

= −0.2V at IC / IB = −20mA / −2mA.

3) High switching speed, typically tf = 1µs at Ic =100mA.

4) Wide SOA (safe operating area).

5) Complements the 2SC4505.

z

Absolute maximum ratings

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

∗

1 Single pulse, Pw=100ms

∗

2 When mounted on a 40×40×0.7 mm ceramic board.

(T a=25°C)

CBO

V
V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

−400

−400

−7

−0.1

−0.2 A(Pulse)

0.5
2

150

−55 to +150

z

Electrical characteristics

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time

Parameter Symbol Min. Typ. Max. Unit Conditions

(T a=25°C)

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

Cob

t

on

t

stg

t

f

−

−400

−

−400

−

−7

−

−

−

−

−0.2

−

−−−1.5 V IC= −20mA, IB= −2mA

−

82

12

−

13

−

− 0.7 −µsIC= −100mA RL=1.5kΩ

− 1.8 −µsIB1= −IB2= −10mA

− 1 −µsVCC~ −150V

−10

−10

−0.5

180

z

Dimensions

MPT3

(1)Base
(2)Collector
(3)Emitter

Unit

V
V
V

A(DC)

µA
µA

MHz

pF

V
V
V

V

−

W

°C
°C

I

C

= −50µA

I

C

= −1mA

I

E

= −50µA

V

CB

V

EB

I

C

= −20mA, IB= −2mA

V

CE
CE

V
V

CB

∗

2

−

−

−

−

−

(Unit : mm)

∗

= −400V
= −6V

= −10V , IC= −10mA
= −10V , IE=10mA , f=5MHz
= −10V , IE=0A , f=1MHz

4.5

1.6

(3)(2)(1)

0.5

0.40.4

1.51.5

3.0

1.5

0.5

2.5

4.0

1.0

0.4

Rev.B 1/3

2SA1759

)

F

)

)

F

)

F

is

F

)

0

F

)

0

)

0

F)

)

e

)

F

nt

Transistors

z

Packaging specifications and hFE

Basic

∗

Denotes hFE

z

Electrical characteristics

−100

−80

(mA)

C

−60

−40

−20

COLLECTOR CURRENT : I

ig.1 Ground emitter output characteristics ( Ι

1000

500

200

EF

100

50

20
10

DC CURRENT GAIN : h

ig.4 DC current gain vs.collector current ( Ι

−10

(V

−5

CE(sat)

(V)

−2

BE(sat)

−1

−0.5

−0.2

−0.1

−0.05

−0.02

COLLECTOR SATURATION VOLTAGE :V

BASE SATURATION VOLTAGE :V

−0.01

ig.7 Collector-emitter saturation voltage

Base-emitter saturation voltage

Rev.B 2/3

Type 2SA1759

Package

h

FE

Marking

Code

ordering unit

(pieces)

MPT3

P

AH
T100
3000

∗

(T a=25°C)

Ta=25

−3mA

−2.5mA

−1.5mA

−0.5mA

Ta=25

VCE=−10V

5V

−2mA

−1mA

IB=0

°C

CE

(V

°C

−3.5mA

−4mA

−4.5mA

−5mA

0

012345

COLLECTOR TO EMITTER VOLTAGE : V

5
2

1

−0.5 −1 −2 −5 −10 −20 −50 −100 −200
COLLECTOR CURRENT : IC (mA)

I

C

/

IB=10V

Ta=−25

°C

V

BE(sat)

100

25

Ta=100

25

0.5 1 2 5 10 20 50 100 200

COLLECTOR CURRENT : IC (mA)

°C

°C

°C

°C

−25

V

CE(sat)

°C

vs. Collector curre

−100

Ta=25°C

−80

(mA)

C

−60

−40

−20

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

−1mA

01020304050

−0.9mA

−0.8mA

−0.7mA

−0.6mA

−0.5mA

−0.4mA

−0.3mA

−0.2mA

IB=−0.1mA

CE

(V

ig.2 Ground emitter output characteristics ( ΙΙ

1000

500

200
100

50

20
10

5

DC CURRENT GAIN : hEF

2
1

−0.5 −1 −2 −5 −10 −20 −50 −100 −200

Ta=100

°C

COLLECTOR CURRENT : IC (mA)

−25

VCE=−10V

25°C

°C

ig.5 DC current gain vs.collector current ( ΙΙ

1000

500

(MHz)

T

200
100

50

20
10

5
2

TRANSITION FREQUENCY : f

1

0.5 1 2 5 10 20 50 100 20
EMITTER CURRENT : IE (mA)

Fig.8 Gain bandwidth products
vs. emitter current

Ta=25

°C

VCE=−10V

−200

−100

(mA)

C

−50

−20

−10

−5

−2

COLLECTOR CURRENT : I

−1

−0.5

BASE TO EMITTER VOLTAGE : VBE (V)

°C

Ta=100

°C

°C

25

−25

V

CE

=−5V

1.40.4 0.6 0.8 1.0 1.20.20

ig.3 Ground emitter propagation characterist

−10

(V

−5

CE(sat)

−2

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

COLLECTOR SATURATION VOLTAGE : V

−0.5 −1 −2 −5 −10 −20 −50 −100 −20

Fig.6 Collector-emitter saturation voltage
vs. collector current

1000

(p

ob

500

200
100

50

20
10

5
2

1

COLLECTOR OUTPUT CAPACITANCE : C

−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −5
COLLECTOR TO BASE VOLTAGE : V

Fig.9 Collector output capacitanc
vs. collector-base voltage

IC/IB=20

COLLECTOR CURRENT : IC (mA)

Ta=25

°C

10

Ta=25

°C

f=1MHz
I

E

=0A

CB

(V