ROHM 2SA1585S, 2SB1424 Schematic [ru]
2SB1424 / 2SA1585S
Transistors
Low VCE(sat) T ransistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures
1) Low V
CE(sat).
V
CE(sat) = −0.2V (T yp.)
(I
C/IB = −2A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC41 15S.
zStructure
Epitaxial planar type
PNP silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
2SB1424
Collector current
Collector power
dissipation
2SA1585S
2SB1424
2SA1585S
Junction temperature
Storage temperature
Single pulse Pw=10ms
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
CP
I
P
C
Tj
Tstg
zExternal dimensions (Unit : mm)
2SB1424
+
0.2
4.5
0.2
+
±0.3
4.0
Denotes hFE
∗
0.5±0.1
−0.1
2.5
0.4±0.1
1.5±0.1
1.0±0.2
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol: AE
−0.1
1.6±0.1
0.5±0.1
3.0±0.2
(3)(2)(1)
0.4±0.1
1.5±0.1
1.5±0.1
(1) Base
(2) Collector
(3) Emitter
−20 V
−20
−6
−3
V
V
A
−2
A(Pulse)−5
0.5
0.4
150
−55 to 150
∗
W
°C
°C
2SA1585S
4±0.2 2±0.2
3±0.2(15Min.)
3Min.
+
0.15
0.45
(2) (3)
−0.05
+
+
0.4
2.5
−0.1
(1) Emitter
(2) Collector
(3) Base
0.15
0.45
0.5
−0.05
+
0.1
0.4
−0.05
5
(1)
ROHM : SPT
∗
EIAJ : SC-72
Rev.A 1/3
2SB1424 / 2SA1585S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
zPackaging specifications and h
Package
Code
Type
2SA1585S
2SB1424
h
QR
QR
FE
Basic ordering
unit (pieces)
zElectrical characteristic curves
−10
−5
−2
(A)
C
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−5m
COLLECTOR CURRENT : I
−2m
−1m
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
BASE TO EMITTER VOLTAGE : V
Fig.1 Grounded emitter propagation
characteristics
VCE= −2V
Ta=100°C
25°C
−40°C
BE
BV
BV
BV
V
Cob
FE
(V)
Min.
Typ. Max. Unit Conditions
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
−20
−20
−6
120
−
−
−
−
−
−0.1
−
−
−0.1
−
−
−0.5
−
390
−
240
−
35
hFE values are classified as follows :
Taping
TP T100
5000 1000
−
−
−2.0
−18mA
(A)
−1.6
C
−1.2
−0.8
−0.4
COLLECTOR CURRENT : I
0
0 −0.2 −0.4 −0.6 −0.8 −1.0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter output
−20mA
characteristics ( )
−16mA
C
−
−
−
µ
µ
MHz
−
pF
−
= −50µA
VI
C
= −1mA
I
V
E
= −50µA
I
V
V
CB
A
EB
A
V
V
I
C/IB
V
−
CE
CE
V
CB
V
= −20V
= −5V
= −2A/ −0.1A
= −2V, IC= −0.1A
= −2V, IE=0.5A, f=100MHz
= −10V, IE=0A, f=1MHz
Item Q R
FE
h
−14mA
120 to 270 180 to 390
Ta=25°C
−12mA
−10mA
−8mA
−6mA
−4mA
−2mA
I
=0A
B
(A)
C
COLLECTOR CURRENT : I
(V)
CE
−5
−4
−3
−2
−1
0
COLLECTOR TO EMITTER VOLTAGE : V
40mA
−45mA
Ta=25°C
35mA
−
−30mA
25mA
−
−20mA
−15mA
−10mA
−5mA
IB=0A
CE
−50mA
−
0 −1 −2 −3 −4 −5
Fig.3 Grounded emitter output
characteristics ( )
(V)
Rev.A 2/3
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