ROHM 2SA1585S, 2SB1424 Schematic [ru]

2SB1424 / 2SA1585S

Transistors

Low VCE(sat) T ransistor (−20V, −3A)

2SB1424 / 2SA1585S

zFeatures

1) Low V

CE(sat).

V

CE(sat) = −0.2V (T yp.)

(I

C/IB = −2A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2150 / 2SC41 15S.

zStructure

Epitaxial planar type
PNP silicon transistor

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

2SB1424

Collector current

Collector power
dissipation

2SA1585S

2SB1424
2SA1585S

Junction temperature
Storage temperature

Single pulse Pw=10ms

∗

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

I

C

CP

I

P

C

Tj

Tstg

zExternal dimensions (Unit : mm)

2SB1424

+

0.2

4.5

0.2

+

±0.3

4.0

Denotes hFE

∗

0.5±0.1

−0.1

2.5

0.4±0.1

1.5±0.1

1.0±0.2

ROHM : MPT3
EIAJ : SC-62

Abbreviated symbol: AE

−0.1

1.6±0.1

0.5±0.1

3.0±0.2

(3)(2)(1)

0.4±0.1

1.5±0.1

1.5±0.1

(1) Base
(2) Collector
(3) Emitter

−20 V

−20

−6

−3

V
V

A

−2
A(Pulse)−5

0.5

0.4

150

−55 to 150

∗

W

°C
°C

2SA1585S

4±0.2 2±0.2

3±0.2(15Min.)

3Min.

+

0.15

0.45

(2) (3)

−0.05

+

+

0.4

2.5

−0.1

(1) Emitter
(2) Collector
(3) Base

0.15

0.45

0.5

−0.05

+

0.1

0.4

−0.05

5

(1)

ROHM : SPT

∗

EIAJ : SC-72

Rev.A 1/3

2SB1424 / 2SA1585S

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance

zPackaging specifications and h

Package
Code

Type
2SA1585S
2SB1424

h
QR
QR

FE

Basic ordering
unit (pieces)

zElectrical characteristic curves

−10

−5

−2

(A)

C

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

−5m

COLLECTOR CURRENT : I

−2m

−1m

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4

BASE TO EMITTER VOLTAGE : V

Fig.1 Grounded emitter propagation

characteristics

VCE= −2V

Ta=100°C

25°C

−40°C

BE

BV
BV
BV

V

Cob

FE

(V)

Min.

Typ. Max. Unit Conditions

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

−20

−20

−6

120

−

−

−

−

−

−0.1

−

−

−0.1

−

−

−0.5

−

390

−

240

−

35

hFE values are classified as follows :

Taping

TP T100

5000 1000

−

−

−2.0

−18mA

(A)

−1.6

C

−1.2

−0.8

−0.4

COLLECTOR CURRENT : I

0

0 −0.2 −0.4 −0.6 −0.8 −1.0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.2 Grounded emitter output

−20mA

characteristics ( )

−16mA

C

−

−

−

µ

µ

MHz

−

pF

−

= −50µA

VI

C

= −1mA

I

V

E

= −50µA

I

V

V

CB

A

EB

A

V

V

I

C/IB

V

−

CE

CE

V

CB

V

= −20V
= −5V

= −2A/ −0.1A
= −2V, IC= −0.1A
= −2V, IE=0.5A, f=100MHz
= −10V, IE=0A, f=1MHz

Item Q R

FE

h

−14mA

120 to 270 180 to 390

Ta=25°C

−12mA

−10mA

−8mA

−6mA

−4mA

−2mA

I

=0A

B

(A)

C

COLLECTOR CURRENT : I

(V)

CE

−5

−4

−3

−2

−1

0

COLLECTOR TO EMITTER VOLTAGE : V

40mA

−45mA

Ta=25°C

35mA

−

−30mA

25mA

−

−20mA

−15mA

−10mA

−5mA

IB=0A

CE

−50mA

−

0 −1 −2 −3 −4 −5

Fig.3 Grounded emitter output

characteristics ( )

(V)

Rev.A 2/3