2SB1132 / 2SA1515S / 2SB1237
Transistors
Medium Power Transistor (−32V,−1A)
2SB1 132 / 2SA1515S / 2SB1237
zFeatures
1) Low V
CE(sat).
V
CE(sat) = −0.2V(T yp.)
(I
C / IB = −500mA / −50mA)
2) Compliments 2SD1664 /
2SD1858
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SB1132
+
−
0.5 0.1
+
−
0.3
−0.1
+0.2
2.5
4.0
0.4 0.1
+
−
1.5 0.1
1.0 0.2
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol: BA
2SB1237
0.65Max.
(1)
Denotes h
∗
+
−
+
−
+
6.8 0.2
−
(2)
(3)
2.54
2.54
ROHM :
FE
+0.2
4.5
−0.1
+
1.6 0.1
−
+
0.5 0.1
−
+
3.0 0.2
−
0.5 0.1
ATV
(3)(2)(1)
0.4 0.1
1.5 0.1
(1) Base
(2) Collector
(3) Emitter
0.9
1.0
+
−
1.5
+
−
∗
+
−
4.4 0.2
+
−
14.5 0.5
1.05
(1) Emitter
(2) Collector
(3) Base
+0.2
−0.1
+
2.5 0.2
−
0.4
+
0.45 0.1
−
+0.1
−0.05
2SA1515S
+
4 0.2 2 0.2
−
+
−
3 0.2(15Min.)
3Min.
+0.15
0.45
−0.05
+0.4
2.5
5
(1)
ROHM : SPT
EIAJ : SC-72
−0.1
(2) (3)
0.5
(1) Emitter
(2) Collector
(3) Base
+
−
+0.15
0.45
−0.05
Rev.B 1/4
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SB1132
Collector power
dissipation
2SA1515S
2SB1237
Junction temperature
Storage temperature
1 Single pulse, Pw=100ms
∗
2 When mounted on a 40 40 0.7 mm ceramic board.
∗
3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
∗
+
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1132, 2SB1237
2SA1515S − 390 −
Transition frequency
Output capacitance
Measured using pulse current.
∗
zPackaging specifications and h
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
C
I
−40 V
−32
−5
−1
0.5
P
C
2
0.3
1
Tj
Tstg
+
150
−55 to +150
Min.
CBO
FE
BV
BV
BV
V
I
I
CE(sat)
h
Cob
CBO
EBO
f
CEO
EBO
FE
T
−40
−32
−5
−
−
−
82
120
−
−
2SB1132 / 2SA1515S / 2SB1237
V
V
A(DC)
W
C
C
1
∗
2
∗
3
∗
VI
I
V
I
V
V
µA
V
µA
I
V
−
V
V
MHz
V
pF
C
C
E
= −
CB
EB
C/IB
CE
CE
CB
= −
= −
50µA
1mA
50µA
= −
= −
= −
= −
= −
= −
20V
4V
500mA/−50mA
3V, I
C
= −
0.1A
5V, I
E
=
50mA, f=30MHz
10V, I
E
=
0A, f=1MHz
A(Pulse)−2
Typ. Max. Unit Conditions
−
−
−
−
−
−
−0.5
−
−0.5
−
−0.5
−0.2
390
−
150
20
−
30
∗
∗
Type
2SB1132
2SA1515S
2SB1237
Package
Code
FE
h
Basic ordering unit (pieces)
PQR
QR
PQR
T100 TP
1000 5000
Taping
−
−−
TU2
2500
−−
−
h
FE values are classified as follows :
Item P Q R
FE
h
82 to 180 120 to 270 180 to 390
Rev.B 2/4